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Image Part Number D.S Description Package Category Prices / Stock Model Action
Image Part Number D.S Description Package Category Prices / Stock Model Action
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RN2601 Toshiba
1 PNP x 2 Bias Resistor Built-in Transistors (BRT), 4.7 kΩ/4.7 kΩ, SOT-26(SM6) Other RN2601 1 Download Model
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CUHS20S30 Toshiba
1 30 V/2 A Schottky Barrier Diode, SOD-323HE(US2H) Other CUHS20S30 1 Download Model
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TC75W71FU Toshiba
This part was updated within the past 30 days.
Set alerts for model updates on the part download page.
1 Dual Comparator (CMOS), 1.8 V to 5.5 V, SOT-505 (SM8) Other TC75W71FU 1 Download Model
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TK4K1A60F Toshiba
1 N-ch MOSFET, 600 V, 4.1 Ω@10V, TO-220SIS, π-MOSⅨ Other TK4K1A60F 1 Download Model
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TAR5S43 Toshiba
1 200 mA Fixed Output LDO Regulator, 4.3 V, SOT-25(SMV) Other TAR5S43 1 Download Model
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CUS15S30 Toshiba
1 20 V/1.5 A Schottky Barrier Diode, SOD-323(USC) Other CUS15S30 1 Download Model
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TCR2LF15 Toshiba
1 200 mA Fixed Output LDO Regulator, 1.5 V, SOT-25(SMV) Other TCR2LF15 1 Download Model
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TCS30NPU Toshiba
1 Single-pole detection Magnetic Sensor, Push-pull output, SOT-353F(UFV) Other TCS30NPU 1 Download Model
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1SS384 Toshiba
1 10 V/0.1 A Schottky Barrier Diode, SOT-343(USQ) Other 1SS384 1 Download Model
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7UL2T00FK Toshiba
1 One-Gate Logic(L-MOS), 2-Input/NAND with Level Shifting, SOT-765(US8) Other 7UL2T00FK 1 Download Model
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DCM321D00 Toshiba
This part was updated within the past 30 days.
Set alerts for model updates on the part download page.
1 HIGH SPEED DUAL CHANNEL DIGITAL ISOLATORS, High-spped, 50Mbps, 3000Vrms, 8pin SOIC Narrow body Other DCM321D00 1 Download Model
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TK1K9A60F Toshiba
1 N-ch MOSFET, 600 V, 1.9 Ω@10V, TO-220SIS, π-MOSⅨ Other TK1K9A60F 1 Download Model
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TK10A80E Toshiba
1 N-ch MOSFET, 800 V, 1.0 Ω@10V, TO-220SIS, π-MOSⅧ Other TK10A80E 1 Download Model
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GT50NR21 Toshiba
1 (1) 6.5th generation(2) The RC-IGBT consists of a freewheeling diode monolithically integrated in an IGBT chip.(3) Enhancement mode(4) High-speed switching IGBT : tf = 0.20 µs (typ.) (IC = 50 A) FWD : trr = 0.50 µs (typ.) (IF = 15 A)(5) Low saturation voltage : VCE(sat) = 1.8 V (typ.) (IC = 50 A)(6) High junction temperature : Tj = 175 (max) Transistor Outline, Vertical GT50NR21 1 Download Model
Part Image Part Image 1 Phototriac; ZVC; wide creepage; 5-pin DIP6; SMT; VDE Small Outline Packages TLP3083F(D4,TP4F 1 Download Model
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RN1409 Toshiba
1 NPN Bias Resistor Built-in Transistors (BRT), 47 kΩ/22 kΩ, SOT-346(S-Mini) Other RN1409 1 Download Model
Part Image Part Image 1 Bus Driver, AHCT/VHCT/VT Series, 1-Func, 8-Bit, True Output, CMOS, PDSO20 Small Outline Packages 74VHCT9541AFT 1 Download Model
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TCR3UG13A Toshiba
1 300 mA Fixed Output LDO Regulator, 1.3 V, WCSP4F Other TCR3UG13A 1 Download Model
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RN1315 Toshiba
1 NPN Bias Resistor Built-in Transistors (BRT), 2.2 kΩ/10 kΩ, SOT-323(USM) Other RN1315 1 Download Model
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TC74VHC08F Toshiba
1 Quad 2-Input/AND, SOP14 Small Outline Packages TC74VHC08F 1 Download Model
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SSM3J16CT Toshiba
1 P-ch MOSFET, -0.1 A, 45 Ω@1.5V, SOT-883(CST3) Other SSM3J16CT 1 Download Model
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RN2115MFV Toshiba
1 PNP Bias Resistor Built-in Transistors (BRT), 2.2 kΩ/10 kΩ, SOT-723(VESM) Other RN2115MFV 1 Download Model
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TK200E65Z5 Toshiba
1 N-ch MOSFET, 650 V, 0.200 Ω@10V, TO-220, DTMOSⅥ, ±1µA, -55°C to 150°C Other TK200E65Z5 1 Download Model
Part Image Part Image 1 3-to-8 Line Decoder, US16 Small Outline Packages TC74VHC238FK 1 Download Model
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RN1116 Toshiba
1 NPN Bias Resistor Built-in Transistors (BRT), 4.7 kΩ/10 kΩ, SOT-416(SSM) Other RN1116 1 Download Model