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Image	Part Number	D.S	Description	Package Category	Prices / Stock	Model	Action
	RNMF14FTC240K Stackpole Electronics, Inc.	1	Precision metal film• Superior electrical, TCR performances• Flame-retardant coatings are standard• Panasert available selected sizes (contact Stackpole)• RNMF (mini) an ideal choice where size constraints apply• RNF 5% replaces MP series• Lower or higher resistance values may be possible (contact Stackpole)• 100% RoHS compliant and lead free without exemption• Halogen free• REACH compliant	Resistors, Axial Diameter Horizontal Mounting	RNMF14FTC240K	3D model available Symbol and footprint available 3	1 Download Model
	RNF18FTD100K Stackpole Electronics, Inc.	1	RES, MF, 1/8W, 100 Kohm, 1%, 100 ppmPrecision metal film• Superior electrical, TCR performances• Flame-retardant coatings are standard• Panasert available selected sizes (contact Stackpole)• RNMF (mini) an ideal choice where size constraints apply• RNF 5% replaces MP series• Lower or higher resistance values may be possible (contact Stackpole)• 100% RoHS compliant and lead free without exemption• REACH compliant and halogen free	Resistors, Axial Diameter Horizontal Mounting	RNF18FTD100K	3D model available Symbol and footprint available 3	1 Download Model
	MJE15031G onsemi	1	DC Current Gain Specified to 4.0 Amperes hFE = 40 (Min) @ IC = 3.0 Adc hFE = 20 (Min) @ IC = 4.0 Adc; TO-220AB Compact Package; Collector-Emitter Sustaining Voltage - VCEO(sus) = 120 Vdc (Min) MJE15028, MJE15029 VCEO(sus) = 150 Vdc (Min) - MJE15030, MJE15031; High Current Gain - Bandwidth Product fT = 30 MHz (Min) @ IC = 500 mAdc; Pb-Free Packages are Available	Transistor Outline, Vertical	MJE15031G	3D model available Symbol and footprint available 3	1 Download Model
	NJVMJD2955T4G onsemi	1	Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix); DC Current Gain Specified to 10 Amperes; Straight Lead Version in Plastic Sleeves ("-1" Suffix); Electrically Similar to MJE2955 and MJE3055; Lead Formed Version Available in 16 mm Tape and Reel ("T4" Suffix); High Current Gain-Bandwidth Product fT = 2.0 MHz (Min) @ IC = 500 mAdc; NJV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable; These are PbFr	Other	NJVMJD2955T4G	3D model available Symbol and footprint available 3	1 Download Model

	MJE172G onsemi	1	Annular Construction for Low Leakages - ICBO = 100 nA (Max) @ Rated VCB; DC Current Gain - hFE = 30 (Min) @ IC = 0.5 Adc hFE = 12 (Min) @ IC = 1.5 Adc; Current-Gain - Bandwidth Product - fT = 50 MHz (Min) @ IC = 100 mAdc; Collector-Emitter Sustaining Voltage - VCEO(sus) = 60 Vdc - MJE171, MJE181 VCEO(sus) = 80 Vdc - MJE172, MJE182; Pb-Free Packages are Available	Transistor Outline, Vertical	MJE172G	3D model available Symbol and footprint available 3	1 Download Model
	UPC835MN-KAA-E2-AT Renesas Electronics	1	The μ PC835 is the higher version of μPC832 and 4062, the J-FET input operational amplifiers, in stability and accuracy. The μ PC835 is a J-FET input dual operational amplifier which realizes both low power consumption and high stability, by adopting a High-Speed PNP transistor of fT = 300 MHz on its output stage. In addition, despite its J-FET input, the μ PC835 realizes low offset voltage characteristics that eclipses conventional general operational amplifiers, by using a resistance trimming system, the	Small Outline Packages	UPC835MN-KAA-E2-AT	3D model available Symbol and footprint available 3	1 Download Model
	MJE182G onsemi	1	Annular Construction for Low Leakages - ICBO = 100 nA (Max) @ Rated VCB; DC Current Gain - hFE = 30 (Min) @ IC = 0.5 Adc hFE = 12 (Min) @ IC = 1.5 Adc; Current-Gain - Bandwidth Product - fT = 50 MHz (Min) @ IC = 100 mAdc; Collector-Emitter Sustaining Voltage - VCEO(sus) = 60 Vdc - MJE171, MJE181 VCEO(sus) = 80 Vdc - MJE172, MJE182; Pb-Free Packages are Available	Transistor Outline, Vertical	MJE182G	3D model available Symbol and footprint available 3	1 Download Model
	MJE15029G onsemi	1	DC Current Gain Specified to 4.0 Amperes hFE = 40 (Min) @ IC = 3.0 Adc hFE = 20 (Min) @ IC = 4.0 Adc; TO-220AB Compact Package; Collector-Emitter Sustaining Voltage - VCEO(sus) = 120 Vdc (Min) MJE15028, MJE15029 VCEO(sus) = 150 Vdc (Min) - MJE15030, MJE15031; High Current Gain - Bandwidth Product fT = 30 MHz (Min) @ IC = 500 mAdc; Pb-Free Packages are Available	Transistor Outline, Vertical	MJE15029G	3D model available Symbol and footprint available 3	1 Download Model
	MJF32CG onsemi	1	Collector–Emitter Saturation Voltage –VCE(sat) = 1.2 Vdc (Max) @ IC = 3.0 Adc; Collector–Emitter Sustaining Voltage – VCEO(sus) = 100 Vdc (Min); High Current Gain – Bandwidth Product fT = 3.0 MHz (Min) @ IC = 500 mAdc; UL Recognized, File #E69369, to 3500 VRMS Isolation; Pb-Free Packages are Available	Transistor Outline, Vertical	MJF32CG	3D model available Symbol and footprint available 3	1 Download Model
	2N6488G onsemi	1	DC Current Gain Specified to 15 Amperes-- hFE = 20-150 @ IC = 5.0 Adc; hFE= 5.0 (Min) @ IC = 15 Adc; Collector-Emitter Sustaining Voltage--VCEO(sus) = 60 Vdc (Min) - 2N6487, 2N6490; VCEO(sus)= 80 Vdc (Min) - 2N6488, 2N6491; High Current Gain--Bandwidth Product fT = 5.0 MHz (Min) @ IC = 1.0 Adc; TO-220AB Compact Package; Pb-Free Packages are Available	Transistor Outline, Vertical	2N6488G	3D model available Symbol and footprint available 3	1 Download Model
	TIP42BG onsemi	1	Collector-Emitter Saturation Voltage - VCE(sat) = 1.5 V (Max) @ IC = 6.0 Adc; High Current Gain Bandwidth Product fT = 3 MHz (min) @ IC = 500 mAdc; Collector-Emitter Sustaining Voltage -VCEO(sus) = 60 Vdc (min) - TIP41A, TIP42A =80 Vdc (min) - TIP41B, TIP42B =100 Vdc (min) - TIP41C, TIP42C; Compact TO-220 AB Package; These are Pb-Free Packages	Transistor Outline, Vertical	TIP42BG	3D model available Symbol and footprint available 3	1 Download Model
	MJW3281AG onsemi	1	Designed for 100 W Audio Frequency; Gain Complementary with device MJW1302A: Gain Linearity from 100 mA to 7 A hFE = 45 (Min) @ IC = 8 A; Low Harmonic Distortion; High Safe Operation Area - 1 A/100 V @ 1 Second; High fT - 30 MHz Typical	Transistor Outline, Vertical	MJW3281AG	3D model available Symbol and footprint available 3	1 Download Model
	NSVF5488SKT3G onsemi	1	Low-noise : NF = 1.0 dB typ. (f = 1 GHz); High gain : \|S21e\|2 = 12 dB typ. (f = 1 GHz); High cut-off frequency : fT = 7 GHz typ.; SSFP package is pin-compatible with SOT-623; AEC-Q101 qualified and PPAP capable; Pb-Free, Halogen Free and RoHS compliance	SO Transistor Flat Lead	NSVF5488SKT3G	3D model available Symbol and footprint available 3	1 Download Model
	BD243CG onsemi	1	Collector - Emitter Saturation Voltage - VCE(sat) = 1.5 Vdc (Max) @ IC = 6.0 Adc; High Current Gain Bandwidth Product fT = 3.0 MHz (Min) @ IC = 500 mAdc; Collector Emitter Sustaining Voltage - VCEO(sus) = 80 Vdc (Min) BD243B, BD244B VCEO(sus) = 100 Vdc (Min) - BD243C, BD244C; Compact TO-220 AB Package; Pb-Free Packages are Available	Transistor Outline, Vertical	BD243CG	3D model available Symbol and footprint available 3	1 Download Model
	HFA3102BZ96 Renesas Electronics	1	The HFA3102 is an all NPN transistor array configured as dual differential amplifiers with tail transistors. Based on Intersil bonded wafer UHF-1 SOI process, this array achieves very high fT (10GHz) while maintaining excellent hFE and VBE matching characteristics over temperature. Collector leakage currents are maintained to under 0. 01nA.	Small Outline Packages	HFA3102BZ96	3D model available Symbol and footprint available 3	1 Download Model

	EEEFT1E561UP Panasonic	1	PANASONIC - EEEFT1E561UP - SMD Aluminium Electrolytic Capacitor, Radial Can - SMD, 560 µF, 25 V, 0.08 ohm, FT Series	Other	EEEFT1E561UP	3D model available Symbol and footprint available 3	1 Download Model
	EEEFTE151XAP Panasonic	1	PANASONIC - EEEFTE151XAP - SMD Aluminium Electrolytic Capacitor, Radial Can - SMD, 150 µF, 25 V, 0.16 ohm, FT Series	Other	EEEFTE151XAP	3D model available Symbol and footprint available 3	1 Download Model
	EEEFT1E471GP Panasonic	1	PANASONIC - EEEFT1E471GP - SMD Aluminium Electrolytic Capacitor, Radial Can - SMD, 470 µF, 25 V, 0.08 ohm, FT Series	Other	EEEFT1E471GP	3D model available Symbol and footprint available 3	1 Download Model
	EEEFT1A102GP Panasonic	1	PANASONIC - EEEFT1A102GP - SMD Aluminium Electrolytic Capacitor, Radial Can - SMD, 1000 ?F, 10 V, 0.08 ohm, FT Series	Other	EEEFT1A102GP	3D model available Symbol and footprint available 3	1 Download Model
	DTC123YUAHE3-TP MCC	1	Single(R1/R2) NPN 100IO(mA) R1 Typ 2.2(KΩ) R2 Typ 10 (KΩ) VCC 50(V) fT 200(MHz) PD200(mW) Tj [max] 150(°C) SOT-323	Other	DTC123YUAHE3-TP	3D model available Symbol and footprint available 3	1 Download Model
	MC011381 Multicomp Pro	1	Resettable Fuse, PPTC, MP FRV, 240 VAC, 750 mA, 1.5 A, 18 s, Rectangular -20°C to +85°C	Other	MC011381	3D model available Symbol and footprint available 3	1 Download Model
	MP042-E CTS	1	CTS MP and MP-SMMC Series incorporates a high Q quartz resonator in a proven resistance-weld metal package. It is ideal for supporting a wide range of commercial and industrial applications.	Other	MP042-E	3D model available Symbol and footprint available 3	1 Download Model
	MP024S CTS	1	CTS MP and MP-SMMC Series incorporates a high Q quartz resonator in a proven resistance-weld metal package. It is ideal for supporting a wide range of commercial and industrial applications.	Other	MP024S	3D model available Symbol and footprint available 3	1 Download Model
	2SC5227A-4-TB-E onsemi	1	Low-noise : NF = 1.0 dB typ (f = 1 GHz); High gain : Forward Transfer Gain = 12 dB typ (f = 1 GHz); High cut-off frequency : fT = 7 GHz typ	SOT23 (3-Pin)	2SC5227A-4-TB-E	3D model not available Symbol and footprint available 2	1 Download Model
	ISL55012IEZ-T7 Renesas Electronics	1	The ISL55012 is a high-performance gain block featuring a Darlington configuration using high fT transistors and excellent thermal performance. They are an ideal choice for DVB-S LNB cable receiver applications.	SOT23 (6-Pin)	ISL55012IEZ-T7	3D model available Symbol and footprint available 3	1 Download Model
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