SZESD Model Download Search Results
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SZESD7002WTT1G
onsemi
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1 | Low Capacitance (0.3pF Typical, IO to GND); SZ Prefix for Automotive and Other Applicatoin Requiring Unique Site and Control Change Requirements; Diode Capacitance Matching; Protection for IEC61000-4-2 (Level 4); Pb-Free and RoHS Compliant; Low ESD Clamping Voltage | SOT23 (3-Pin) | SZESD7002WTT1G |
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SZESD7410N2T5G
onsemi
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1 | Industry Leading Capacitance Linearity Over Voltage; ISO 10605 (ESD) 330 pF/2 k? ±30 kV Contact; Insertion Loss: 0.1 dB at 1 GHz; 0.50 dB at 3 GHz; Ultra−Low Capacitance: < 1.0 pF Max; Low Leakage: < 1 µA; IEC61000−4−2 (ESD): Level 4 ±30 kV Contact; IEC61000−4−4 (EFT): 40 A −5/50 ns; IEC61000−4−5 (Lightning): 1 A (8/20 ?s); SZESD7410MXWT5G Wettable Flank Package; SZ Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable; These | Other | SZESD7410N2T5G |
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SZESDM3551N2T5G
onsemi
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1 | 9.9 A Peak Pulse Current Capable, 8x20us Surge; 8.5 V Clamping Voltage @ 9.9 A, 8x20us Surge; 0201 Form Factor | Other | SZESDM3551N2T5G |
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SZESD7481MUT5G
onsemi
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1 | These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant; UltraLow Capacitance 0.25 pF; Insertion Loss: 0.030 dBm; Low Dynamic Resistance < 1Ω; IEC6100042 Level 4 ESD Protection; These Devices are PbFree, Halogen Free/BFR Free and are RoHS Compliant; Low Clamping Voltage; Stand−off Voltage: 3.3 V; Low Leakage; Response Time is < 1 ns; SZ Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable | Other | SZESD7481MUT5G |
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SZESD7205WTT1G
onsemi
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1 | Low Capacitance (0.4 pF Typical, I/O to GND); Low ESD Clamping Voltage (12V Typical, +16A TLP, I/O to GND); Protection for the Following IEC Standards: IEC 61000−4−2 Level 4 (ESD); SZ Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable; Diode capacitance matching; These Devices are Pb−Free and are RoHS Compliant | SOT23 (3-Pin) | SZESD7205WTT1G |
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SZESD8351P2T5G
onsemi
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1 | These Devices are PbFree, Halogen Free/BFR Free and are RoHS Compliant; Low ESD Clamping Voltage; Protection for the Following IEC Standards: IEC 6100042 (Level 4); Low Capacitance (0.55 pF Max, I/O to GND) | Small Outline Diode Flat Lead | SZESD8351P2T5G |
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SZESD5Z12T1G
onsemi
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1 | Low Clamping Voltage; Small Body Outline Dimensions: 0.047″ x 0.032″ (1.20 mm x 0.80 mm); Low Leakage; Response Time is Typically < 1 ns; IEC61000−4−2 Level 4 ESD Protection and IEC61000−4−4 Level 4 EFT Protection; SZ Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable; Peak Power up to 240 Watts @ 8 x 20 s Pulse; Low Body Height: 0.028″ (0.7 mm); ESD Rating of Class 3 (> 16 kV) per Human Body Model; These Devices are Pb−Fre | Small Outline Diode Flat Lead | SZESD5Z12T1G |
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SZESD5B5.0ST1G
onsemi
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1 | Cap = 32 pf; Low Leakage; IEC61000-4-2 30 kV contact; Low Clamping Voltage; Long Life | Small Outline Diode Flat Lead | SZESD5B5.0ST1G |
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SZESD7004MUTAG
onsemi
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1 | Low Capacitance (0.2 pF Typical, I/O to I/O); Protection for the Following IEC Standards: IEC 61000-4-2 (±15 kV Contact); UL Flammability Rating of 94 V0; This is a Pb-Free Device; Low ESD Clamping Voltage | Other | SZESD7004MUTAG |
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SZESD8351XV2T1G
onsemi
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1 | Low Capacitance (0.55 pF Max, I/O to GND); SZ Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable; Low ESD Clamping Voltage; Protection for the Following IEC Standards: IEC 61000−4−2 (Level 4) ISO 10605; These Devices are PbFree, Halogen Free/BFR Free and are RoHS Compliant | Small Outline Diode Flat Lead | SZESD8351XV2T1G |
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SZESD7241N2T5G
onsemi
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1 | SZESD7241MXWT5G Wettable Flank Package; SZ Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP CapableSZ Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable; Ultra-Low Capacitance: < 1.0pF Max; Low Leakage: < 0.5uA; IEC61000-4-2 (ESD): Level 4 ±28kV Contact; IEC61000-4-4 (EFT): 40A - 5/50ns; IEC61000-4-5 (Lightning): 1A - 8/20us; These Devices are Pb | Other | SZESD7241N2T5G |
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SZESD7351HT1G
onsemi
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1 | Low Leakage: <50nA; Low Capacitance (0.6 pF Max, I/O to GND); Low Clamping Voltage; Response Time is < 1 ns; Low Dynamic Resistance < 1; IEC61000−4−2 Level 4 ESD Protection; SZ Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable; These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant; Stand−off Voltage: 3.3 V | Small Outline Diode | SZESD7351HT1G |
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SZESD5Z5.0T5G
onsemi
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1 | Low Clamping Voltage; Small Body Outline Dimensions: 0.047″ x 0.032″ (1.20 mm x 0.80 mm); Low Leakage; Response Time is Typically < 1 ns; IEC61000−4−2 Level 4 ESD Protection and IEC61000−4−4 Level 4 EFT Protection; SZ Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable; Peak Power up to 240 Watts @ 8 x 20 s Pulse; Low Body Height: 0.028″ (0.7 mm); ESD Rating of Class 3 (> 16 kV) per Human Body Model; These Devices are Pb−Fre | Small Outline Diode Flat Lead | SZESD5Z5.0T5G |
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SZESD9C3.3ST5G
onsemi
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1 | Small Body Outline Dimensions: 0.039 x 0.024 (1.0 mm x 0.60 mm); Low Body Height: 0.016 (0.40 mm) Max; Standoff Voltage: 3.3V, 5V; Low Leakage; Response Time is < 1 ns; IEC61000-4-2 Level 4 ESD Protection | Small Outline Diode Flat Lead | SZESD9C3.3ST5G |
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SZESD7462MXWT5G
onsemi
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1 | Industry Leading Capacitance Linearity Over Voltage; Ultra−Low Capacitance: 0.3 pF Typ; Insertion Loss: 0.05 dB at 1 GHz; 0.21 dB at 3 GHz; Low Leakage: < 1 nA; IEC61000−4−2 (ESD): Level 4 ±15 kV Contact; IEC61000−4−4 (EFT): 40 A −5/50 ns; IEC61000−4−5 (Lightning): 1 A (8/20 ?s); ISO 10605 (ESD) 330 pF/2 k? ±20 kV Contact; SZESD7462MXWT5G Wettable Flank Package; SZ Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable; These D | Other | SZESD7462MXWT5G |
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SZESD9X5.0ST5G
onsemi
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1 | SZ Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; Small Body Outline Dimensions: 0.039 x 0.024 (1.0 mm x 0.60 mm); Low Body Height: 0.017 (0.43 mm) Max; Standoff Voltage: 3.3 V 12 V; Low Leakage; Response Time is Typically < 1 ns; ESD Rating of Class 3 (> 16 kV) per Human Body Model; IEC6100042 Level 4 ESD Protection; These are PbFree Devices | Small Outline Diode Flat Lead | SZESD9X5.0ST5G |
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SZESD9X3.3ST5G
onsemi
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1 | Low Leakage; Response Time is Typically < 1 ns; ESD Rating of Class 3 (> 16 kV) per Human Body Model; IEC6100042 Level 4 ESD Protection; These are PbFree Devices; Small Body Outline Dimensions: 0.039 x 0.024 (1.0 mm x 0.60 mm); Low Body Height: 0.017 (0.43 mm) Max; Standoff Voltage: 3.3 V 12 V | Small Outline Diode Flat Lead | SZESD9X3.3ST5G |
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SZESD9M5.0ST5G
onsemi
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1 | Small Body Outline Dimensions:0.039 x 0.024 (1.00 mm x 0.60 mm); Low Body Height: 0.016 (0.4 mm); Stand-off Voltage: 5 V; Low Leakage; IEC61000-4-2 level 4 ESD protection; This is a Pb-Free device | Small Outline Diode Flat Lead | SZESD9M5.0ST5G |
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SZESD7361P2T5G
onsemi
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1 | Low Capacitance 0.55pF Max; Protection for IEC61000-4-2 (Level 4); Protection for IEC61000-4-4 (EFT): 40A (5/50ns); Protection for IEC61000-4-5 (Lightning): 1A (8/20us); Protection for ISO10605 330pF/2kΩ ±15kV Contact; SZ Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable; These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant | Small Outline Diode Flat Lead | SZESD7361P2T5G |
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SZESD7102BT1G
onsemi
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1 | Last Shipments - ESD Protection Diodes, Low Capacitance Dual Channel | SOT23 (3-Pin) | SZESD7102BT1G |
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SZESD7008MUTAG
onsemi
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1 | ESD Protection Diode, High Speed Data, Low Capacitance | SZESD7008MUTAG |
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SZESD8004MUTAG
onsemi
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1 | Trans Voltage Suppressor Diode, 3.3V V(RWM), Unidirectional, 4 Element, Silicon | SZESD8004MUTAG |
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SZESD7371XV2T1G
onsemi
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1 | Trans Voltage Suppressor Diode, 5.3V V(RWM), Unidirectional, 1 Element, Silicon | SZESD7371XV2T1G |
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SZESD9L3.3ST5G
onsemi
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1 | Trans Voltage Suppressor Diode, 3.3V V(RWM), Unidirectional, 1 Element, Silicon | SZESD9L3.3ST5G |
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SZESD5Z7.0T5G
onsemi
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1 | Trans Voltage Suppressor Diode, 200W, 7V V(RWM), Unidirectional, 1 Element, Silicon | SZESD5Z7.0T5G |
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