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FM24W256-G
Infineon
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1 | F-RAM IIC FRAM 256k 3-5V F-RAM | Small Outline Packages | FM24W256-G |
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M10162040054X0PWAR
Renesas Electronics
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1 | The M1016204 series is a 16Mbit high performance non-volatile MRAM with speed up to 108MHz. The M1016204 offers superior reliability and greater than 20-year data retention (at 85°C). It does not require backup battery or capacitor(s) compared to non-volatile SRAM. The M1016204 supports Quad SPI, SDR and DDR interface. It operates at 1.8V typical from -40°C to +105°C (industrial plus version) and offered in an SOIC or DFN (WSON) package. | Small Outline No-lead | M10162040054X0PWAR |
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M30162040108X0PWAR
Renesas Electronics
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1 | The M3016204 series is a 16Mbit high performance non-volatile MRAM with speed up to 108MHz. The M3016204 offers superior reliability and greater than 20-year data retention (at 85°C). It does not require backup battery or capacitor(s) compared to non-volatile SRAM. The M3016204 supports Quad SPI, SDR and DDR interface. It operates at 3V typical from -40°C to +105°C (industrial plus version) and offered in an SOIC or DFN (WSON) package. | Small Outline No-lead | M30162040108X0PWAR |
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M10042040108X0IWAY
Renesas Electronics
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1 | The M1004204 series is a 4Mbit high-performance non-volatile MRAM with speed up to 108MHz. The M1004204 offers superior reliability and greater than 20-year data retention (at 85°C). It does not require backup battery or capacitor(s) compared to non-volatile SRAM. The M1004204 supports Quad SPI, SDR and DDR interface. It operates at 1.8V typical from -40°C to +105°C (industrial plus version) and offered in an SOIC or DFN (WSON) package. | Small Outline No-lead | M10042040108X0IWAY |
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M30042040108X0ISAY
Renesas Electronics
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1 | The M3004204 series is a 4Mbit high performance non-volatile MRAM with speed up to 108MHz. The M3004204 offers superior reliability and greater than 20-year data retention (at 85°C). It does not require backup battery or capacitor(s) compared to non-volatile SRAM. The M3004204 supports Quad SPI, SDR and DDR interface. It operates at 3V typical from -40°C to +105°C (industrial plus version) and offered in an SOIC or DFN (WSON) package. | Small Outline Packages | M30042040108X0ISAY |
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M30042040054X0PSAY
Renesas Electronics
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1 | The M3004204 series is a 4Mbit high performance non-volatile MRAM with speed up to 108MHz. The M3004204 offers superior reliability and greater than 20-year data retention (at 85°C). It does not require backup battery or capacitor(s) compared to non-volatile SRAM. The M3004204 supports Quad SPI, SDR and DDR interface. It operates at 3V typical from -40°C to +105°C (industrial plus version) and offered in an SOIC or DFN (WSON) package. | Small Outline Packages | M30042040054X0PSAY |
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M30082040054X0ISAY
Renesas Electronics
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1 | The M3008204 series is a 8Mbit high performance non-volatile MRAM with speed up to 108MHz. The M3008204 offers superior reliability and greater than 20-year data retention (at 85°C). It does not require backup battery or capacitor(s) compared to non-volatile SRAM. The M3008204 supports Quad SPI, SDR and DDR interface. It operates at 3V typical from -40°C to +105°C (industrial plus version) and offered in an SOIC or DFN (WSON) package. | Small Outline Packages | M30082040054X0ISAY |
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M10042040108X0PWAY
Renesas Electronics
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1 | The M1004204 series is a 4Mbit high-performance non-volatile MRAM with speed up to 108MHz. The M1004204 offers superior reliability and greater than 20-year data retention (at 85°C). It does not require backup battery or capacitor(s) compared to non-volatile SRAM. The M1004204 supports Quad SPI, SDR and DDR interface. It operates at 1.8V typical from -40°C to +105°C (industrial plus version) and offered in an SOIC or DFN (WSON) package. | Small Outline No-lead | M10042040108X0PWAY |
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M10082040054X0PWAR
Renesas Electronics
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1 | The M1008204 series is a 8Mbit high performance non-volatile MRAM with speed up to 108MHz. The M1008204 offers superior reliability and greater than 20-year data retention (at 85°C). It does not require backup battery or capacitor(s) compared to non-volatile SRAM. The M1008204 supports Quad SPI, SDR and DDR interface. It operates at 1.8V typical from -40°C to +105°C (industrial plus version) and offered in an SOIC or DFN (WSON) package. | Small Outline No-lead | M10082040054X0PWAR |
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M10162040054X0PSAR
Renesas Electronics
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1 | The M1016204 series is a 16Mbit high performance non-volatile MRAM with speed up to 108MHz. The M1016204 offers superior reliability and greater than 20-year data retention (at 85°C). It does not require backup battery or capacitor(s) compared to non-volatile SRAM. The M1016204 supports Quad SPI, SDR and DDR interface. It operates at 1.8V typical from -40°C to +105°C (industrial plus version) and offered in an SOIC or DFN (WSON) package. | Small Outline Packages | M10162040054X0PSAR |
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CY15V104QSN-108SXI
Infineon
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1 | FRAM 4Mbit Serial-SPI 1.8V 8-Pin SOIC Standard | Small Outline Packages | CY15V104QSN-108SXI |
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FM25V20A-DGQTR
Infineon
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1 | F-RAM F-RAM Memory Serial | Small Outline No-lead | FM25V20A-DGQTR |
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TMF0008PSR
Texas Instruments
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1 | FRAM (Ferroelectric RAM) Memory IC 8Kbit 1-Wire® 8-SO -10°C ~ 85°C,5.25V | Small Outline Packages | TMF0008PSR |
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FM25CL64B-DG
Infineon
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1 | 64Kbit F-RAM Memory 8Kx8 SPI 3V TDFN8 | Small Outline No-lead | FM25CL64B-DG |
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FM18W08-SGTR
Infineon
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1 | CYPRESS SEMICONDUCTOR - FM18W08-SGTR - F-RAM, NON-VOL, 256KBIT, SOIC-28 | Small Outline Packages | FM18W08-SGTR |
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FM25V02A-DG
Infineon
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1 | Cypress Semiconductor FM25V02A-DG SPI FRAM Memory, 256kbit, 2 → 3.6 V 8-Pin DFN | Small Outline No-lead | FM25V02A-DG |
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CY15E064J-SXA
Infineon
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1 | F-RAM F-RAM Memory Serial | Small Outline Packages | CY15E064J-SXA |
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FM25V10-GTR
Infineon
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1 | F-RAM 1M (128Kx8) 2.0-3.6V F-RAM | Small Outline Packages | FM25V10-GTR |
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CY15B204QN-40SXE
Infineon
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1 | F-RAM FRAM | Small Outline Packages | CY15B204QN-40SXE |
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FM22LD16-55-BG
Infineon
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1 | F-RAM 4M (256Kx16) 55ns F-RAM | BGA | FM22LD16-55-BG |
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CY15B064Q-SXET
Infineon
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1 | F-RAM F-RAM Memory Serial | Small Outline Packages | CY15B064Q-SXET |
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2530N
Signetics
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1 | 2530 -4096 Bit High Speed Static MOS ROM (512 x 8),+0.3 to -20 V,730 mW -65 to +150C | Dual-In-Line Packages | 2530N |
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FM25VN10-GTR
Infineon
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1 | F-RAM 1M (128Kx8) 2.0-3.6V F-RAM | Small Outline Packages | FM25VN10-GTR |
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M27C4002-15F1
STMicroelectronics
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1 | EPROM 4M (256Kx16) 150ns | Ceramic Dual-In-Line Packages | M27C4002-15F1 |
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M27C801-100F6
STMicroelectronics
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1 | EPROM 8M (1Mx8) 100ns | Dual-In-Line Packages | M27C801-100F6 |
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![Part Image](["https://componentsearchengine.com/Images/9/FM24W256-G.jpg",null,null])
![Part Image](["https://componentsearchengine.com/2D/0T/12650723.3.1.png",null,null])
![Part Image](["https://componentsearchengine.com/2D/0T/12650683.3.1.png",null,null])
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![Part Image](["https://componentsearchengine.com/Images/1/CY15V104QSN-108SXI.jpg",null,null])
![Part Image](["https://componentsearchengine.com/Images/9/FM25V20A-DGQTR.jpg",null,null])
![Part Image](["https://componentsearchengine.com/2D/0T/21891145.1.1.png",null,null])
![Part Image](["https://componentsearchengine.com/Images/9/FM25CL64B-DG.jpg",null,null])
![Part Image](["https://componentsearchengine.com/Images/9/FM18W08-SGTR.jpg",null,null])
![Part Image](["https://componentsearchengine.com/Images/9/FM25V02A-DG.jpg",null,null])
![Part Image](["https://componentsearchengine.com/Images/1/CY15E064J-SXA.jpg",null,null])
![Part Image](["https://componentsearchengine.com/Images/9/FM25V10-GTR.jpg",null,null])
![Part Image](["https://www.mouser.com/images/infineon/images/CY15B201QN-50SXE_SPL.jpg",null,null])
![Part Image](["https://componentsearchengine.com/Images/3/FM22LD16-55-BG.jpg",null,null])
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