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CV201210-1R5K
Bourns
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1 | Inductor RF Shielded Multi-Layer 1.5uH 10% 10MHz 45Q-Factor Ferrite 0.05A 0.5Ohm DCR 0805 T/R | Inductors Chip | CV201210-1R5K |
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6PCV-20-006
TE Connectivity
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1 | Conn Barrier Strip 20 POS 9.53mm Solder ST Thru-Hole 25A/Contact Package | Header, Shrouded - Straight PTH Box | 6PCV-20-006 |
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CV201210-4R7K
Bourns
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1 | BOURNS - CV201210-4R7K - High Frequency Inductor, 4.7 µH, CV201210 Series, 30 mA, 0805 [2012 Metric], Multilayer, 1 ohm | Inductors Chip | CV201210-4R7K |
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CV201210-82NK
Bourns
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1 | Fixed Inductors .082uH 10% MULTI LAYER | Inductors Chip | CV201210-82NK |
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CV201210-2R2K
Bourns
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1 | Fixed Inductors 2.2uH 10% MULTI LAYER | Inductors Chip | CV201210-2R2K |
3
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CV201210-R39K
Bourns
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1 | Fixed Inductors .39uH 10% MULTI LAYER | Inductors Chip | CV201210-R39K |
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CV201210-R22K
Bourns
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1 | Inductor RF Shielded Multi-Layer 0.22uH 10% 25MHz 20Q-Factor Ferrite 0.25A 0.5Ohm DCR 0805 T/R | Inductors Chip | CV201210-R22K |
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CV201210-150K
Bourns
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1 | Fixed Inductors 15 UH 10% SHIELDED | Inductors Chip | CV201210-150K |
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CV201210-R68K
Bourns
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1 | BOURNS - CV201210-R68K - High Frequency Inductor, 680 nH, CV201210 Series, 150 mA, 0805 [2012 Metric], Shielded, 0.8 ohm | Inductors Chip | CV201210-R68K |
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NCV20074DR2G
onsemi
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1 | Rail−To−Rail Output; Wide Supply Range: 2.7 V to 36 V; Wide Bandwidth: 3 MHz typical at VS = 2.7 V; High Slew Rate: 2.8 V/µs typical at VS = 2.7 V; Low Supply Current: 405 µA per channel at VS = 2.7 V; Low Input Bias Current: 5 pA typical; Wide Temperature Range: −40°C to 125°C; Available in a variety of packages; NCV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q100 Qualified and PPAP Capable | Small Outline Packages | NCV20074DR2G |
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NCV20162DR2G
onsemi
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1 | AEC-Q100 Qualified; Wide Bandwidth; Low Input Offset Voltage; Rail to Rail Input and Output | Small Outline Packages | NCV20162DR2G |
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RCV201075M0JNEFAT
Vishay
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1 | 75 MOhms ±5% 0.75W, 3/4W Chip Resistor 2010 (5025 Metric) Automotive AEC-Q200, High Voltage, Moisture Resistant Thick Film | Resistor Chip | RCV201075M0JNEFAT |
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NCV20074DTBR2G
onsemi
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1 | Rail−To−Rail Output; Wide Supply Range: 2.7 V to 36 V; Wide Bandwidth: 3 MHz typical at VS = 2.7 V; High Slew Rate: 2.8 V/µs typical at VS = 2.7 V; Low Supply Current: 405 µA per channel at VS = 2.7 V; Low Input Bias Current: 5 pA typical; Wide Temperature Range: −40°C to 125°C; Available in a variety of packages; NCV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q100 Qualified and PPAP Capable | Small Outline Packages | NCV20074DTBR2G |
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RCV20102M00FKEFAT
Vishay
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1 | 2 MOhms ±1% 0.75W, 3/4W Chip Resistor 2010 (5025 Metric) Automotive AEC-Q200, High Voltage, Moisture Resistant Thick Film | Resistor Chip | RCV20102M00FKEFAT |
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NCV20072DR2G
onsemi
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1 | Rail−To−Rail Output; Wide Supply Range: 2.7 V to 36 V; Wide Bandwidth: 3 MHz typical at VS = 2.7 V; High Slew Rate: 2.8 V/µs typical at VS = 2.7 V; Low Supply Current: 405 µA per channel at VS = 2.7 V; Low Input Bias Current: 5 pA typical; Wide Temperature Range: −40°C to 125°C; NCV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q100 Qualified and PPAP Capable | Small Outline Packages | NCV20072DR2G |
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NCV20072DTBR2G
onsemi
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1 | Standard (General Purpose) Amplifier 2 Circuit Rail-to-Rail 8-TSSOP 2.4V/µs 3.2 MHz 65 mA Surface Mount -40°C ~ 125°C | Small Outline Packages | NCV20072DTBR2G |
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NCV20032DR2G
onsemi
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1 | Unity Gain Bandwidth: 7 MHz at VS = 5 V; Fast Slew Rate: 8 V/?µs rising, 12.5 V/µ?s falling at VS = 5 V; Rail−to−Rail Output; No Output Phase Reversal for Over−Driven Input Signals; Low Offset Voltage: 0.5 mV typical; Low Input Bias Current: 1 pA typical; NCV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q100 Qualified and PPAP Capable | Small Outline Packages | NCV20032DR2G |
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RCV201010M0FKEFAT.
Vishay
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1 | 10 MOhms ±1% 0.75W, 3/4W Chip Resistor 2010 (5025 Metric) Automotive AEC-Q200, High Voltage, Moisture Resistant Thick Film | Resistor Chip | RCV201010M0FKEFAT. |
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RCV2010100MJNEFAT
Vishay
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1 | Thick Film Resistors - SMD 100Mohms 5% 200ppm AEC-Q200 | Resistor Chip | RCV2010100MJNEFAT |
3
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ICL3232ECV-20ZT
Renesas Electronics
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1 | The ICL3221E, ICL3222E, ICL3223E, ICL3232E, ICL3241E, and ICL3243E are 3. 0V to 5. 5V powered RS-232 transmitters/receivers that meet ElA/TIA-232 and V. 28/V. 24 specifications, even at VCC = 3. 0V. Additionally, they provide ±15kV ESD protection (IEC61000-4-2 Air Gap and Human Body Model) on transmitter outputs and receiver inputs (RS-232 pins). Targeted applications are notebook and laptop computers in which the low operational power consumption and even lower standby power consumption is critical. Effici | Small Outline Packages | ICL3232ECV-20ZT |
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NCV20061SQ3T2G
onsemi
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1 | Rail−to−Rail Input and Output; Wide Supply Range: 1.8 to 5.5 V; Wide Bandwidth: 3 MHz; High Slew Rate: 1.2 V/?s at VS = 1.8 V; Low Supply Current: 125 µ?A per Channel at VS = 1.8 V; Low Input Bias Current: 1 pA Typical; Wide Temperature Range: −40 to 125°C; Available in a Variety of Packages; NCV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q100 Qualified and PPAP Capable; These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant | SOT23 (5-Pin) | NCV20061SQ3T2G |
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CV201210-6R8K
Bourns
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1 | FIXED IND 6.8UH 15MA 1 OHM SMD | Inductors Chip | CV201210-6R8K |
3
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CV201210-R47K
Bourns
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1 | Inductor RF Shielded Multi-Layer 0.47uH 10% 25MHz 25Q-Factor Ferrite 0.2A 0.65Ohm DCR 0805 T/R | Inductors Chip | CV201210-R47K |
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RCV2010100KFKEF
Vishay
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1 | 100 kOhms ±1% 0.75W, 3/4W Chip Resistor 2010 (5025 Metric) High Voltage Thick Film , -55°C ~ 155°C | Resistor Chip | RCV2010100KFKEF |
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RCV201010M0FKEF
Vishay
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1 | Thick Film Resistors - SMD 10Mohms 1% 100ppm | Resistor Chip | RCV201010M0FKEF |
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