S-861 Model Download Search Results
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FDMS86150ET100
onsemi
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1 | Max rDS(on) = 7.8 mΩ at VGS = 6 V, ID = 13 A ; Advanced Package and Silicon combination for low rDS(on) and high efficiency ; RoHS Compliant ; 100% UIL tested ; Extended TJ rating to 175°C ; Shielded Gate MOSFET Technology ; MSL1 robust package design ; Max rDS(on) = 4.85 mΩ at VGS = 10 V, ID = 16 A | Other | FDMS86150ET100 |
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FDMS86102LZ
onsemi
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1 | Max rDS(on) = 37 mΩ at VGS = 4.5 V, ID = 5.8 A; 100% UIL Tested ; HBM ESD protection level > 6 KV typical (Note 4); RoHS Compliant; Max rDS(on) = 25 mΩ at VGS = 10 V, ID = 7 A | Other | FDMS86102LZ |
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FDMS86163P
onsemi
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1 | Very low RDS(on) mid voltage P-channel silicon technology optimised for low Qg; Max rDS(on) = 22 mΩ at VGS = -10 V, ID = -7.9 A ; This product is optimised for fast switching applications as well as load switch applications ; 100% UIL tested ; RoHS Compliant ; Max rDS(on) = 30 mΩ at VGS = -6 V, ID = -5.9 A | Other | FDMS86163P |
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FDS86106
onsemi
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1 | High power and current handling capability in a widely used surface mount package; Max rDS(on) = 171 mΩ at VGS = 6 V, ID/ = 2.7 A; 100% UIL Tested; Max rDS(on)= 105 mΩ at VGS = 10 V, ID = 3.4 A; RoHS Compliant; High performance trench technology for extremely low rDS(on) | Small Outline Packages | FDS86106 |
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FDMS86182
onsemi
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1 | Shielded Gate MOSFET Technology; Max rDS(on) = 7.2 mΩ at VGS = 10 V, ID = 28 A; Max rDS(on) = 19.5 mΩ at VGS = 6 V, ID = 14 A; 50% Lower Qrr than Other MOSFET Suppliers; Lowers Switching Noise/EMI; MSL1 Robust Package Design; 100% UIL Tested; RoHS Compliant | Other | FDMS86182 |
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TS861ID
STMicroelectronics
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1 | Rail-to-rail micropower BiCMOS comparators | Small Outline Packages | TS861ID |
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TS861ILT
STMicroelectronics
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1 | STMicroelectronics TS861ILT Comparator, Push-Pull O/P, 500ns 2.7 → 10 V 5-Pin SOT-23 | SOT23 (5-Pin) | TS861ILT |
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FDMS86103L
onsemi
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1 | Advanced Package and Silicon combination for low rDS(on) and high efficiency ; 100% UIL tested ; RoHS Compliant ; Max rDS(on) = 8 mΩ at VGS = 10 V, ID = 12 A ; Max rDS(on) = 11 mΩ at VGS = 4.5 V, ID = 10 A ; MSL1 robust package design ; Shielded Gate MOSFET Technology | Other | FDMS86103L |
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FDMS86101
onsemi
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1 | Advanced Package and Silicon combination for low rDS(on) and high efficiency ; Max rDS(on) = 8 mΩ at VGS = 10 V, ID = 13 A ; RoHS compliant ; 100% UIL tested ; Max rDS(on) = 13.5 mΩ at VGS = 6 V, ID = 9.5 A ; MSL1 robust package design | Other | FDMS86101 |
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MFS8613BMDA0ES
NXP
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1 | Power Management Specialized - PMIC Safety System Basis Chip For Domain Controller, Fit For ASIL D | Other | MFS8613BMDA0ES |
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TS861AIDT
STMicroelectronics
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1 | Rail-to-rail micropower BiCMOS comparators | Small Outline Packages | TS861AIDT |
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FDMS86152
onsemi
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1 | Advanced Package and Silicon combination for low rDS(on) and high efficiency ; Max rDS(on) = 6 mΩ at VGS = 10 V, ID = 14 A ; Max rDS(on) = 11 mΩ at VGS = 6 V, ID = 11.5 A ; MSL1 robust package design ; RoHS Compliant ; 100% UIL tested | Other | FDMS86152 |
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TS861AILT
STMicroelectronics
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1 | Rail-to-rail micropower BiCMOS comparators | SOT23 (5-Pin) | TS861AILT |
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TS861AID
STMicroelectronics
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1 | Rail-to-rail micropower BiCMOS comparators | Small Outline Packages | TS861AID |
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FDMS86105
onsemi
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1 | 100% UIL tested; Advanced package and silicon combination for low rDS(on) and high efficiency; Max rDS(on) = 54 mΩ at VGS = 6 V, ID = 4.5 A; Max rDS(on) = 34 mΩ at VGS = 10 V, ID = 6 A; MSL1 robust package design; RoHS Compliant; Shielded Gate MOSFET Technology | Other | FDMS86105 |
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FDMS86181
onsemi
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1 | Max rDS(on) = 4.2 mΩ at VGS = 10 V, ID = 44 A ; RoHS Compliant ; Lowers switching noise/EMI ; 50% lower Qrr than other MOSFET suppliers ; ADD ; 100% UIL tested ; MSL1 robust package design ; Max rDS(on) = 12 mΩ at VGS = 6 V, ID = 22 A ; Shielded Gate MOSFET Technology | Other | FDMS86181 |
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FDMS86101DC
onsemi
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1 | Max rDS(on) = 7.5 mΩ at VGS = 10 V, ID = 14.5 A ; Dual Cool™ Top Side Cooling PQFN package ; 100% UIL Tested ; Shielded Gate MOSFET Technology ; Max rDS(on) = 12 mΩ at VGS = 6 V, ID = 11.5 A ; RoHS Compliant ; High performance technology for extremely low rDS(on) | Other | FDMS86101DC |
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BAS86,115
Nexperia
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1 | Schottky Barrier Diode,50V,200mA,BAS86 | Other | BAS86,115 |
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FDS86141
onsemi
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1 | 100% UIL Tested; RoHS Compliant; Max rDS(on) = 23 mΩ at VGS = 10 V, ID = 7 A; Max rDS(on) = 36 mΩ at VGS = 6 V, ID = 5.5 A; High Performance Trench Technology for Extremely Low rDS(on) | Small Outline Packages | FDS86141 |
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FDMS86150
onsemi
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1 | RoHS Compliant ; MSL1 robust package design ; Shielded Gate MOSFET Technology ; Advanced Package and Silicon combination for low rDS(on) and high efficiency ; Max rDS(on) = 4.85 mΩ at VGS = 10 V, ID = 16 A ; Max rDS(on) = 7.8 mΩ at VGS = 6 V, ID = 13 A ; 100% UIL tested | Other | FDMS86150 |
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FDMS86101A
onsemi
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1 | MSL1 robust package design ; 100% Rg tested; Max rDS(on) = 13.5 mΩ at VGS = 6 V, ID = 9.5 A ; Advanced Package and Silicon combination for low rDS(on) and high efficiency ; 100% UIL tested ; RoHS Compliant ; Max rDS(on) = 8 mΩ at VGS = 10 V, ID = 13 A ; Shielded Gate MOSFET Technology | Other | FDMS86101A |
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TS861IDT
STMicroelectronics
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1 | Rail-to-rail micropower BiCMOS comparators | Small Outline Packages | TS861IDT |
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FDMS86183
onsemi
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1 | Max rDS(on) = 34.6 mΩ at VGS = 6 V, ID = 8 A ; MSL1 Robust Package Design ; Lowers Switching Noise/EMI ; Shielded Gate MOSFET Technology ; 100% UIL Tested ; RoHS Compliant ; Max rDS(on) = 12.8 mΩ at VGS = 10 V, ID = 16 A ; 50% Lower Qrr than Other MOSFET Suppliers | Other | FDMS86183 |
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FDMS86180
onsemi
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1 | 50% Lower Qrr than Other MOSFET Suppliers; 100% UIL Tested ; Shielded Gate MOSFET Technology ; Max rDS(on) = 3.2 mΩ at VGS = 10 V, ID = 67 A ; MSL1 Robust Package Design ; Max rDS(on) = 7.9 mΩ at VGS = 6 V, ID = 33 A ; RoHS Compliant ; Lowers Switching Noise/EMI | Other | FDMS86180 |
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S-861-L51
Honeywell Sensing and Control / Clarostat
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1 | Transistor Output Slotted Switch, 1-Channel, 3.175mm Slot Width | S-861-L51 |
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