Showing 25 of 116445 results
| Image | Part Number | D.S | Description | Package Category | Prices / Stock | Model | Action |
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| Image | Part Number | D.S | Description | Package Category | Prices / Stock | Model | Action |
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FSV340AF
onsemi
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1 | Obsolete - Surface Mount Schottky Barrier Rectifier | Small Outline Diode Flat Lead | FSV340AF |
3
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Download Model |
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P2N2222AG
onsemi
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1 | Bipolar (BJT) Transistor NPN 40 V 600 mA 300MHz 625 mW Through Hole TO-92 (TO-226) | Other | P2N2222AG |
3
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Download Model |
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MMBT3640
onsemi
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1 | Obsolete - 12 V, 80 mA 12 V Switching Bipolar Junction Transistor | SOT23 (3-Pin) | MMBT3640 |
3
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Download Model |
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MMBD1405
onsemi
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1 | High Voltage General Purpose Diode | SOT23 (3-Pin) | MMBD1405 |
3
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Download Model |
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MMSZ5226CT1G
onsemi
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1 | 500 mW Rating on FR-4 or FR-5 Board; ESD Rating of Class 3 (exceeding 16 kV) per the Human Body Model Mechanical Characteristics:; Package Designed for Optimal Automated Board Assembly; Small Package Size for High Density Applications; Wide Zener Reverse Voltage Range - 2.4 V to 110 V; General Purpose, Medium Current; CASE: Void-free, transfer-molded, thermosetting plastic case; FINISH: Corrosion resistant finish, easily solderable; MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES: 260?C for 10 Seconds; POLA | Small Outline Diode | MMSZ5226CT1G |
3
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Download Model |
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NCV8189CMTW120TAG
onsemi
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1 | 1.6V to 5.5V input voltage; Output voltage from 0.6V; Controlled output voltage slew rate; PSRR: 85 dB at 1 kHz; Low dropout 65mV ar 3.3V / 0.5A; Ultra-Low Noise: 10µVRMS; WDFNW6 2 x 2mm and DFNW8 3 x 3mm | Small Outline No-lead | NCV8189CMTW120TAG |
3
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Download Model |
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LM2931Z-5.0G
onsemi
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1 | Internal Current Limiting with Thermal Shutdown; Low Bias Current; 60 V Load Dump Protection; Input-to-Output Voltage Differential of < 0.6 V @ 100 mA; Economical 5-Lead TO-220 Package with Two Optional Leadforms; -50 V Reverse Transient Protection; Available in Surface Mount SOP-8, D2PAK and DPAK Packages; Output Current in Excess of 100 mA; Ideally Suited for Battery Powered Equipment; Temporary Mirror-Image Protection; High Accuracy (+/-2%) Reference (LM2931AC) Available | Other | LM2931Z-5.0G |
3
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Download Model |
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2N7002KT3G
onsemi
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1 | N-Channel Small Signal MOSFET 60V 380mA 1.6 Ω | SOT23 (3-Pin) | 2N7002KT3G |
3
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Download Model |
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SZMM3Z13VST1G
onsemi
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1 | Standard Zener Breakdown Voltage Range - 2.4 V to 75 V; Steady State Power Rating of 300 mW; ESD Rating of Class 3 (>16 KV) per Human Body Model Mechanical Characteristics:; Tight Tolerance ; MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES: 260?C for 10 Seconds; FLAMMABILITY RATING: UL94 V-0; These Devices are PbFree, Halogen Free/BFR Free and are RoHS Compliant; AEC-Q101 Qualified and PPAP Capable ; SZ Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements | Small Outline Diode | SZMM3Z13VST1G |
3
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Download Model |
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FQA9N90C-F109
onsemi
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1 | Obsolete - Power MOSFET, N-Channel, QFET, 900V, 8.6A, 1.3Ω, TO-3P | Transistor Outline, Vertical | FQA9N90C-F109 |
3
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Download Model |
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2SA1593T-E
onsemi
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1 | Obsolete - Bipolar Transistor, (-)100V, (-)2A, Low VCE(sat), (PNP)NPN Single TP/TP-FA | Transistor Outline, Vertical | 2SA1593T-E |
3
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Download Model |
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MC79L15ABDR2G
onsemi
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1 | No External Components Required; Internal Short Circuit Current Limiting; Internal Thermal Overload Protection; Low Cost; Complementary Positive Regulators Offered (MC78L00 Series); Pb-Free Packages are Available | Small Outline Packages | MC79L15ABDR2G |
3
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Download Model |
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SZMMBZ47VTALT1G
onsemi
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1 | SOT-23 Package Allows Either Two Separate Unidirectional Configurations or a Single Bidirectional Configuration; Working Peak Reverse Voltage Range - 3 V to 26 V; Standard Zener Breakdown Voltage Range - 5.6 V to 33 V; Peak Power - 24 or 40 Watts @ 1.0 ms (Unidirectional); ESD Rating of Class N (exceeding 16 kV) per the Human Body Model; Maximum Clamping Voltage @ Peak Pulse Current; Low Leakage < 5.0 µ A; Flammability Rating UL 94V-O Mechanical Characteristics:; CASE: Void-free, transfer-molded, thermosett | SOT23 (3-Pin) | SZMMBZ47VTALT1G |
3
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Download Model |
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MC33275DT-3.0G
onsemi
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1 | Obsolete - LDO Regulator, 300 mA, High PSRR | Other | MC33275DT-3.0G |
2
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Download Model |
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MJE170G
onsemi
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1 | Annular Construction for Low Leakages - ICBO = 100 nA (Max) @ Rated VCB; DC Current Gain - hFE = 30 (Min) @ IC = 0.5 Adc hFE = 12 (Min) @ IC = 1.5 Adc; Current-Gain - Bandwidth Product - fT = 50 MHz (Min) @ IC = 100 mAdc; Collector-Emitter Sustaining Voltage - VCEO(sus) = 60 Vdc - MJE171, MJE181 VCEO(sus) = 80 Vdc - MJE172, MJE182; Pb-Free Packages are Available | Transistor Outline, Vertical | MJE170G |
3
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Download Model |
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FDY3000NZ
onsemi
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1 | 600 mA, 20 V ; RDS(ON) = 850 mΩ @ VGS = 2.5 V; ESD Protection Diode (note 3); RoHS Compliant; RDS(ON) = 700 mΩ@ VGS = 4.5 V | SO Transistor Flat Lead | FDY3000NZ |
3
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Download Model |
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LM1117IMPX-ADJNOPB
onsemi
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1 | Available in Adjustable Version; Space-saving SOT-223 package; Current limiting and thermal protection; Output current: 800 mA; Line regulation: 0.2% (maximum); Load regulation: 0.4% (maximum) | Other | LM1117IMPX-ADJNOPB |
2
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Download Model |
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NVTFS8D1N08HTAG
onsemi
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1 | Small Footprint (3x3 mm); Low RDS(on); Low QG and Capacitance; Wettable Flank Option available; AEC−Q101 Qualified and PPAP Capable; RoHS Compliant | Other | NVTFS8D1N08HTAG |
3
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Download Model |
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NSBA114EDP6T5G
onsemi
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1 | Simplifies Circuit Design; Reduces Board Space; Reduces Component Count; S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable; These Devices are PbFree, Halogen Free/BFR Free and are RoHS Compliant | SO Transistor Flat Lead | NSBA114EDP6T5G |
3
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Download Model |
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MM5Z4697T1G
onsemi
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1 | Wide Zener Breakdown Voltage Range - 1.8 V to 43 V; Small Body Outline Dimensions: 1.20 mm X 0.6 mm; SZ Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable; Low Reverse Current (IZT) - 50µA | Small Outline Diode Flat Lead | MM5Z4697T1G |
3
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Download Model |
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MBRB30H30CT-1G
onsemi
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1 | Obsolete - Schottky Barrier Rectifier, H-Series, 60 V, 30 A | Transistor Outline, Vertical | MBRB30H30CT-1G |
3
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Download Model |
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2N6107G
onsemi
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1 | Obsolete - 7.0 A, 50V PNP Bipolar Power Transistor | Transistor Outline, Vertical | 2N6107G |
3
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Download Model |
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MOC3041TVM
onsemi
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1 | Peak Blocking Voltage – 250 V, MOC303XM – 400 V, MOC304XM ; Simplifies Logic Control of 115 VAC power ; Zero Voltage Crossing ; dv/dt of 2000 V/µs Typical, 1000 V/µs Guaranteed ; Safety and Regulatory Approvals – UL1577, 4,170 VACRMS for 1 Minute – DIN EN/IEC60747-5-5 | Dual-In-Line Packages | MOC3041TVM |
3
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Download Model |
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MUR420G
onsemi
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1 | • Ultrafast 25 ns, 50 ns and 75 ns Recovery Times• 175°C Operating Junction Temperature• Low Forward Voltage• Low Leakage Current• High Temperature Glass Passivated Junction• Reverse Voltage to 600 V• Shipped in Plastic Bags, 500 per Bag• Available in Tape and Reel, 1500 per Reel, by Adding a “RLG’’Suffix to the Part Number• MUR460 available in Fan Fold Ammo Pak, 1000 per Box,by adding a “FFG” suffix to the part number• These are Pb−Free Packages* | Diodes, Axial Diameter Horizontal Mounting | MUR420G |
3
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Download Model |
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NTMFSCH1D4N08XTWG
onsemi
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1 | MOSFET - Power, SingleN-Channel, DUAL COOL,DFN8 5x680 V, 1.4 m, 263 A | Other | NTMFSCH1D4N08XTWG |
3
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Download Model |