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Image Part Number D.S Description Package Category Prices / Stock Model Action
Image Part Number D.S Description Package Category Prices / Stock Model Action
Part Image Part Image 1 Obsolete - Linear Voltage Regulator, 100 mA, 5 to 24 V, Positive Other MC7824CD2TG 1 Download Model
Part Image Part Image 1 Max rDS(on) = 180mΩ at VGS = -4.5V, ID = -1.5A; VF < 500mV @ 1A; VF < 580mV @ 2A; Schottky and MOSFET incorporated into single power surface mount S0-8 package; Electrically independent Schottky and MOSFET pinout for design flexibility; RoHS Compliant; Max rDS(on) = 115mΩ at VGS = -10V, ID = -3.0A Small Outline Packages FDFS2P753Z 1 Download Model
Part Image Part Image 1 150-V Wide Range Vcc Architecture; Auto-Tuning Skip; Rapid Frequency Foldback; Constant Output Current Limiting; SR Spike Reduction Circuitry (Adaptive Gate Drive); Improved Frequency Jittering; 350 KHz high frequency QR; Internal 700 V Startup w X2 discharge Other NCP1345Q02D1R2G 1 Download Model
Part Image Part Image 1 Small Compact Surface Mountable Package with J-Bend Leads; Rectangular Package for Automated Handling; Highly Stable Oxide Passivated Junction; Excellent Ability to Withstand Reverse Avalanche Energy Transients; Guardring for Stress Protection Mechanical Characteristics:; Case: Epoxy, Molded, Epoxy Meets UL94, VO; Weight: 217 mg (approximately); Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable; Lead and Mounting Surface Temperature for Soldering Purposes: 260 C Max Diodes Moulded NRVBS360T3G 1 Download Model
Part Image Part Image 1 170A, 60V RDS(on) = 5.6 mΩ(Max.) @VGS = 10 V, ID = 85 A; 100% avalanche tested; Low Crss ( Typ. 620pF); 175°C maximum junction temperature rating; Low gate charge ( Typ. 220nC) Transistor Outline, Vertical FQA170N06 1 Download Model
Part Image Part Image 1 Last Shipments - Silicon Carbide (SiC) Schottky Diode, 650 V, 4 A, D2PAK Transistor Outline, Vertical FFPF30UP20STU 1 Download Model
Part Image Part Image 1 Greater than 400Mbs data rate; Low power dissipation; 2.0ns maximum propagation delay; Meets or exceeds the TIA/EIA-644 LVDS standard; 16-Lead SOIC and TSSOP packages save space; 0.4ns maximum differential pulse skew; Power OFF protection; Pin compatible with equivalent RS-422 and LVPECL devices; 3.3V power supply operation Small Outline Packages FIN1031MX 1 Download Model
Part Image Part Image 1 POLARITY: Cathode indicated by color band. When operated in zener mode, cathode will be positive with respect to anode.; Maximum Limits Guaranteed on Seven Electrical Parameters; CASE: Void-free, transfer-molded, thermo-setting plastic; MOUNTING POSITION: Any; Up to 180 Watt Surge Rating @ 8.3 ms; FINISH: All external surfaces are corrosion resistant and leads are readily solderable; WEIGHT: 0.7 gram (approx); Pb-Free Packages are Available Diodes, Axial Diameter Horizontal Mounting 1N5384BRLG 1 Download Model
Part Image Part Image
FDD3680 onsemi
1 Obsolete - PowerTrench MOSFET, N-Channel, 100V, 32A, 36mΩ Other FDD3680 1 Download Model
Part Image Part Image 1 Obsolete - 8A, 600V, STEALTH Diode Transistor Outline, Vertical ISL9R460PF2 1 Download Model
Part Image Part Image 1 Trench Technology; AECQ101 Qualified and PPAP Capable; RoHS Compliant SO Transistor Flat Lead NVR5124PLT1G 1 Download Model
Part Image Part Image 1 Guardring for Stress Protection; Very Low Forward Voltage; Epoxy Meets UL94, VO at 1/8"; Package Designed for Optimal Automated Board Assembly Mechanical Characteristics:; Reel Options: 3,000 per 7 inch reel / 8 mm tape; Reel Options: 10,000 per 13 inch reel / 8 mm tape; Device Marking: B4; Polarity Designator: Cathode Band; Weight: 11.7 mg (approximately); Case: Epoxy Molded; Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable; Lead and Mounting Surface Temperature f Small Outline Diode MBR0540T1G 1 Download Model
Part Image Part Image
1N456A onsemi
1 Small Signal Diode, Single, 30 V, 500 mA, 1 V, 4 A Other 1N456A 1 Download Model
Part Image Part Image 1 Fine Lithography Trench−based Schottky Technology for Very Low Forward Voltage and Low Leakage; Fast Switching with Exceptional Temperature Stability; Low Power Loss and Lower Operating Temperature; Higher Efficiency for Achieving Regulatory Compliance; High Surge Capability; These are Pb−Free and Halide−Free Devices Diodes Moulded NRVTSA4100T3G 1 Download Model
Part Image Part Image 1 Obsolete - Hot Swap Controller with Enable, -48 V Small Outline Packages TPS2398DMT7G 1 Download Model
Part Image Part Image 1 16 bit SPI control; Power Up without Open Circuit Detection; Low Quiescent Current; Limp Home Functionality; 3.3V and 5V compatible Digital Input Supply Range; Fault Reporting of Open Load, Over Load, and Over Temperature; Power On Reset; Uniform output structure of all outputs on one side of the package.; AEC-Q100 Qualified ; 4 Channels; 600 mA Low-Side Drivers; Parallel Input Pins Small Outline Packages NCV7750DPR2G 1 Download Model
Part Image Part Image 1 Low Forward Voltage Drop ; Low Reverse Current; Flat Lead, Surface Mount Device Under 0.70 mm Height; Extremely Small Outline Plastic Package SOD-523; NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable; These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Small Outline Diode Flat Lead RB521S30T5G 1 Download Model
Part Image Part Image 1 Low gate charge ( Typ. 68nC); 12.6A, 800V RDS(on) = 750mΩ(Max.) @VGS = 10 V, ID = 6.3A; Low Crss ( Typ. 30pF); 100% avalanche tested Transistor Outline, Vertical FQA13N80-F109 1 Download Model
Part Image Part Image 1 High Voltage Range: up to 600 V; dV/dt Immunity 50 V/nsec; Gate Drive Supply Range from 10 V to 20 V; High and Low DRV Outputs; Output Source / Sink Current Capability 1.1 A / 2.4 A; 3.3 V and 5 V Input Logic Compatible; Up to Vcc Swing on Input Pins; Matched Propagation Delays between Both Channels; Outputs in Phase with the Inputs; Independent Logic Inputs to Accommodate All Topologies; Under VCC LockOut (UVLO) for Both Channels; Pin to Pin Compatible with IR2181(S) Small Outline Packages NCP5181DR2G 1 Download Model
Part Image Part Image 1 Obsolete - High Voltage PNP Bipolar Transistor SOT23 (3-Pin) MMBT5401LT1 1 Download Model
Part Image Part Image 1 Zener Voltage Range - 3.3 V to 200 V; ESD Rating of Class 3 (>16 KV) per Human Body Model; Flat Handling Surface for Accurate Placement; Package Design for Top Side or Bottom Circuit Board Mounting Mechanical Characteristics:; CASE: Void-free, transfer-molded plastic; FINISH: All external surfaces are corrosion resistant with readily solderable leads; MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES: 260°C for 10 seconds; LEADS: Modified L-Bend providing more contact area to bond pads; POLARITY: Cathode indi Diodes Moulded 1SMB5923BT3G 1 Download Model
Part Image Part Image 1 UIS Capability ; Typical RDS(on) = 1.2 mΩ at VGS = 10V, ID = 80 A; RoHS Compliant ; Typical Qg(tot) = 150 nC at VGS = 10V, ID = 80 A Other FDBL0150N60 1 Download Model
Part Image Part Image 1 Low Internal Power Dissipation: ICC = 1µA (Max) at TA = 25°C; High Speed: tPD = 4.3ns (Typ) at VCC = 5V; Power Down Protection Provided on Inputs; Pin and Function Compatible with Other Standard Logic Families; Chip Complexity: FETs = <100; Pb-Free Packages are Available; Designed for 2.0 V to 5.5 V VCC Operation SOT23 (5-Pin) MC74VHC1G09DFT2G 1 Download Model
Part Image Part Image 1 Zener Voltage Range - 2.4 V to 33 V; ESD Rating of Class 3 (>16 KV) per Human Body Model; DO-204AH Package - Smaller than Conventional DO-204AA Package; Double Slug Type Construction; Metallurgically Bonded Construction Mechanical Charasteristics:; CASE: Double slug type, hermetically sealed glass; MAXIMUM LEAD TEMPERATURE FOR SOLDERING PURPOSES: 230°C, 1/16", fromcase for 10 seconds; FINISH: All external surfaces are corrosion resistant with readily solderable leads; POLARITY: Cathode indicated by color ba Diodes, Axial Diameter Horizontal Mounting BZX79C5V1 1 Download Model
Part Image Part Image 1 RoHS Compliant; Ultra Low Gate Charge (Typ. Qg = 75 nC); 100% Avalanche Tested; Typ. RDS(on) = 102 mΩ; 650 V @TJ= 150°C; Low Effective Output Capacitance (Typ. Coss(eff) = 258 pF) Transistor Outline, Vertical FCP125N60E 1 Download Model