Showing 25 of 132190 results
| Image | Part Number | D.S | Description | Package Category | Prices / Stock | Model | Action |
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| Image | Part Number | D.S | Description | Package Category | Prices / Stock | Model | Action |
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MC74HC1G08DFT2G
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1 | High Noise Immunity; Low Power Dissipation: ICC = 1mA (Max) at TA = 25°C; Symmetrical Output Impedance (IOH = IOL = 2mA); High Speed: tPD = 7ns (Typ) at VCC = 5V; Balanced Propagation Delays (tpLH = tpHL); Chip Complexity: FET = 44; Equivalent Gate = 11; Pb-Free Packages are Available; Designed for 2.0 V to 6.0 V Vcc Operation Wide Operating Vcc Range | SOT23 (5-Pin) | MC74HC1G08DFT2G |
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MMBF5459
onsemi
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1 | Obsolete - P-Channel General Purpose Amplifier | SOT23 (3-Pin) | MMBF5459 |
3
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ES2B
onsemi
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1 | Glass passivated junction. ; Superfast recovery time for highefficiency.; Built-in strain relief. ; For surface mount applications. ; Low profile package. | Diodes Moulded Non Polarised | ES2B |
3
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NC7SZ126P5X
onsemi
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1 | Matches Performance of LCX Operated at 3.3V VCC ; Over-Voltage Tolerance Inputs Facilitate 5V to 3V Translation ; Proprietary Noise/EMI Reduction Circuitry ; Power Down High-Impedance Inputs/Outputs ; High Output Drive: ±24mA at 3V VCC ; Ultra-Small MicroPak™ Packages ; Broad VCCOperating Range: 1.65V to 5.5V ; Space-Saving SOT23 and SC70 Packages; Ultra-High Speed: tPD 2.6ns (Typical) into 50pF at 5V VCC | SOT23 (5-Pin) | NC7SZ126P5X |
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MTP2P50EG
onsemi
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1 | Obsolete - Power MOSFET -30V -50A 25 mOhm Single P-Channel TO-220 Logic Level | Transistor Outline, Vertical | MTP2P50EG |
3
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ESD8101FCT5G
onsemi
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1 | These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant; Low Capacitance (0.20 pF Typ, I/O to GND); Protection for the Following IEC Standards: IEC 61000−4−2 (Level 4); Low ESD Clamping Voltage | Other | ESD8101FCT5G |
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NCP51403MNTXG
onsemi
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1 | Input Voltage Rails: Supports 2.5 V, 3.3 V and 5 V Rails; PVCC Voltage Range: 1.1 to 3.5 V; Integrated Power MOSFETs; Fast Load−Transient Response; PGOOD − Logic output pin to Monitor VTT Regulation; VRI − Reference Input Allows for Flexible Input Tracking Either Directly or Through Resistor Divider; EN − Logic input pin for Shutdown mode; Built−in Under Voltage Lockout and Over Current Limit | Small Outline No-lead | NCP51403MNTXG |
3
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NCV8560SN330T1G
onsemi
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1 | Output Voltage Options:Adjustable, 1.5 V, 1.8 V, 2.5 V, 2.8 V, 3.0 V, 3.3 V, 3.5 V, 5.0 V; UltraLow Dropout Voltage of 150 mV at 150 mA; Adjustable Output by External Resistors from 5.0 V down to 1.250 V; Fast Enable Turnon Time of 15us; Excellent Line and Load Regulation; High Accuracy up to 1.5% Output Voltage Tolerance over AllOperating Conditions; Typical Noise Voltage of 50 uVrms without a Bypass Capacitor; Wide Supply Voltage Range Operating Range; NCV Prefix for Automotive and Other Applications Requ | SOT23 (5-Pin) | NCV8560SN330T1G |
3
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NVD5C478NT4G
onsemi
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1 | AEC−Q101 Qualified and PPAP Capable; RoHS Compliant; Low on-resistance; High current capability; 100% avalanche energy tested | Other | NVD5C478NT4G |
3
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AFGB40T65RQDN
onsemi
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1 | AEC Q101 qualified; Maximum Junction Temperature : TJ = 175℃; Positive Temperature Co-efficient; Low Saturation Voltage; Tightened Parameter Distribution; High Current Capability; Short Circuit rated | Other | AFGB40T65RQDN |
3
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EGP10B
onsemi
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1 | High surge current capability; Superfast recovery time for high efficiency; Low leakage current; Low forward voltage, high current capability | Diodes, Axial Diameter Horizontal Mounting | EGP10B |
3
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ES1B
onsemi
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1 | Built-in strain relief. ; For surface mount applications. ; Glass passivated junction. ; Superfast recovery times for high efficiency.; Easy pick and place. ; Low profile package. | Diodes Moulded | ES1B |
3
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2SK3745LS-1E
onsemi
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1 | Low ON-resistance,Low input capacitance,Ultrahigh-speed switching; High reliability by Adoption of HVP process; Micaless package facilitating mounting; Avalanche resistance guarantee | Transistor Outline, Vertical | 2SK3745LS-1E |
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LP2950ACDT-5RKG
onsemi
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1 | Linear Voltage Regulator IC Positive Fixed 1 Output 100mA DPAK5V ,-40°C ~ 125°C | Other | LP2950ACDT-5RKG |
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Download Model |
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MC3403DR2G
onsemi
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1 | True Differential Input Stage; Four Amplifiers Per Package; Short Circuit Protected Outputs; Similar Performance to Popular MC1741C; Split Supply Operation: ± 1.5 V to ± 18 V; Single Supply Operation: 3.0 V to 36 V; ESD Diodes Added for Increased Ruggedness; Low Input Bias Currents: 500 nA Max; Internally Compensated; Industry Standard Pinouts; Class AB Output Stage for Minimal Crossover Distortion | Small Outline Packages | MC3403DR2G |
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ESDM2032MX4T5G
onsemi
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1 | These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS; Stand-off Voltage: 3.3 V; Small Body Outline Dimensions: 0.60 mm x 0.30 mm, 0.20 mm thickness; >15 A Peak Pulse Current Capable, 8x20 us Surge; Ultra-Low RDYN; FC > 350 MHz | Other | ESDM2032MX4T5G |
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MMBZ15VDLT1G
onsemi
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1 | Working Peak Reverse Voltage Range - 12.8 V, 22 V; SOT-23 Package Allows Either Two Separate Unidirectional Configurations or a Single Bidirectional Configuration; Standard Zener Breakdown Voltage Range - 15 V, 27 V; Peak Power : 40 Watts @ 1.0 ms (Bidirectional); ESD Rating of Class N (exceeding 16 kV) per the Human Body Model; Maximum Clamping Voltage @ Peak Pulse Current; Low Leakage < 100 nA; Flammability Rating UL 94V-O Mechanical Characteristics:; CASE: Void-free, transfer-molded, thermosetting plasti | SOT23 (3-Pin) | MMBZ15VDLT1G |
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NDC7001C
onsemi
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1 | Proprietary SuperSOT™-6 package design using copper lead frame for superior thermal and electrical capabilities; Q2: -0.34 A, 60 V RDS(ON) = 5 Ω @ VGS = -10 V RDS(ON) = 7.5 Ω @ VGS = -4.5 V; High saturation current ; Q1: 0.51 A, 60 V RDS(ON) = 2 Ω @ VGS = 10 V RDS(ON) = 4 Ω @ VGS = 4.5 V; High density cell design for low RDS(ON). | SOT23 (6-Pin) | NDC7001C |
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NVGS3136PT1G
onsemi
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1 | Obsolete - Single P-Channel Power MOSFET -20V, -1A, 90mΩ | SOT23 (6-Pin) | NVGS3136PT1G |
3
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NCV8164AML250TCG
onsemi
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1 | 1.6V to 5.5V input voltage; PSRR: 85 dB at 1 kHz; Low VDO at 2.8V @80mV max dropout; WDFN6 2 mm x 2 mm, DFNW8 3 mm x 3 mm, and TSOP-5; Ultra-Low Noise: 9µVRMS; 150C operating Junction temperature | Small Outline No-lead | NCV8164AML250TCG |
3
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SURS8340T3G-GA01
onsemi
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1 | Power Rectifier, Ultra-Fast Recovery, 3 A, 400 V | Diodes Moulded | SURS8340T3G-GA01 |
3
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NCV8715MX50TBG
onsemi
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1 | Operating Input Voltage Range: 2.5 V to 24 V; 1.2 V, 1.5 V, 1.8 V, 2.5 V, 3.0 V, 3.3 V, 5.0 V Fixed Output Voltage Versions; Low 4.7 uA typ Quiescent Current; PSRR 54 dB at 1 kHz; Thermal Shutdown and Current Liimit Protections; Available in XDFN6 1.5 x 1.5 mm and SC-70 packages | Other | NCV8715MX50TBG |
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FJA4313OTU
onsemi
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1 | High Current Capability: IC = 15 A; Excellent Gain Linearity for low THD; High Power Dissipation : 130 watts; Complement to 2SA1962/FJA4213; High Frequency : 30 MHz; High Voltage : VCEO = 250 V; Thermal and electrical Spice models are available; Wide S.O.A for reliable operation | Transistor Outline, Vertical | FJA4313OTU |
3
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MC14516BDG
onsemi
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1 | Supply Voltage Range = 3.0 Vdc to 18 Vdc; Single Pin Reset; Diode Protection on All Inputs; Capable of Driving Two Low-Power TTL Loads or One Low-Power Schottky Load Over the Rated Temperature Range; Asynchronous Preset Enable Operation; Internally Synchronous for High Speed; Logic Edge-Clocked Design - Count Occurs on Positive Going Edge of Clock; Pb-Free Packages are Available | Small Outline Packages | MC14516BDG |
3
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NTLJF3117PT1G
onsemi
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1 | 20 V 2.3A (Ta) 710mW (Ta) Surface Mount 6-WDFN (2x2) | Other | NTLJF3117PT1G |
3
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