Showing 25 of 116445 results
| Image | Part Number | D.S | Description | Package Category | Prices / Stock | Model | Action |
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| Image | Part Number | D.S | Description | Package Category | Prices / Stock | Model | Action |
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NSVMUN5132T1G
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1 | Simplifies Circuit Design; Reduces Board Space; Reduces Component Count; NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable; These Devices are PbFree, Halogen Free/BFR Free and are RoHS Compliant | SOT23 (3-Pin) | NSVMUN5132T1G |
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MCT5211SR2M
onsemi
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1 | IEC60747-5-2 approved (ordering option V); High CTRCE(SAT) comparable to Darlingtons; Underwriters Laboratory (UL) recognized, file #E90700, volume 2; Data rates up to 150kbits/s (NRZ); High common mode transient rejection 5kV/µs; CTR guaranteed 0°C to 70°C | Other | MCT5211SR2M |
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FOD8321
onsemi
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1 | 2.5A Output Current, Gate Drive Optocoupler in Optoplanar® Wide Body SOP 5-Pin | Other | FOD8321 |
3
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NCP5623DTBR2G
onsemi
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1 | Support full I2C protocol; This is a Pb-Free Device; 32-Steps Constant Current per channel, 32k colors combination ; Provides three independent LED drives; 2.7 to 5.5V Input voltage range; RGB function fully supported; Programmable Integrated Gradual Dimming; 90 mA Output Current Capability | Small Outline Packages | NCP5623DTBR2G |
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MC74AC541DWR2G
onsemi
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1 | MC74AC540/74ACT540 Provides Inverted Outputs; MC74AC541/74ACT541 Provides Noninverted Outputs; Outputs Source/Sink 24 mA; ACT540 and ACT541 Have TTL Compatible Inputs MC74AC540/74ACT540 MC74AC541/74ACT541 FACT DATA 5-1; Inputs and Outputs Opposite Side of Package, Allowing Easier Interface to Microprocessors; 3-State Outputs; Pb-Free Packages are Available | Small Outline Packages | MC74AC541DWR2G |
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NJVMJD45H11T4G
onsemi
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1 | Complementary Pairs Simplifies Designs; Low Collector Emitter Saturation Voltage VCE(sat) = 1.0 Volt Max @ 8.0 Amperes; Lead Formed for Surface Mount Application in Plastic Sleeves (No Suffix); Straight Lead Version in Plastic Sleeves ("-1" Suffix); Lead Formed Version in 16 mm Tape and Reel for Surface Mount ("T4" Suffix); Electrically Similar to Popular D44H/D45H Series; Fast Switching Speeds; NJV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 | Other | NJVMJD45H11T4G |
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TL431ACDG
onsemi
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1 | Low Output Noise Voltage; Programmable Output Voltage to 36 V; Voltage Reference Tolerance: +/- 0.4%, Typ @ 25°C (TL431B); Equivalent Full-Range Temperature Coefficient of 50 ppm/ °C Typical; Low Dynamic Output Impedance, 0.22 W Typical; Temperature Compensated for Operation over Full Rated Operating Temperature Range; Sink Current Capability of 1.0 mA to 100 mA; Pb-Free Packages are Available | Small Outline Packages | TL431ACDG |
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S1DFL
onsemi
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1 | Glass Passivated Junction; UL Flammability 94V-0 Classification; MSL level 1; Ultra Thin Profile – Maximum Height of 1.08 mm; RoHS Compliant / Green Mold Compound | Small Outline Diode Flat Lead | S1DFL |
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NVLJWS070N06CLTAG
onsemi
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1 | UDFN Package with Exposed Drain Pads; Low Profile UDFN 2.0x2.0x0.55 mm ; Ultra Low RDS(on); Optimized Gate Charge; Low Capacitance; AEC−Q101 Qualified and PPAP Capable; RoHS Compliant | Other | NVLJWS070N06CLTAG |
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NCP1522BSNT1G
onsemi
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1 | Obsolete - Buck Converter, DC-DC, High Efficiency, Adjustable Output Voltage, 3 MHz, 600 mA | SOT23 (5-Pin) | NCP1522BSNT1G |
3
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FQD13N06TM
onsemi
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1 | 10A, 60V, RDS(on) = 140mΩ(Max.) @VGS = 10 V, ID = 5A; Low Crss ( Typ. 15pF); Low gate charge ( Typ. 5.8nC); 100% avalanche tested | Other | FQD13N06TM |
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NCP4620DSN50T1G
onsemi
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1 | Obsolete - Linear Voltage Regulator, LDO, Wide Voltage Input, 150 mA | SOT23 (5-Pin) | NCP4620DSN50T1G |
3
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MMDL914T3G
onsemi
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1 | These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant; S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AECQ101 Qualified and PPAP Capable | Small Outline Diode | MMDL914T3G |
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NC7SZ10L6X
onsemi
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1 | Ultra small MicroPak™ leadless package; Space saving SC70 6-lead package; Power down high impedance inputs/output; Overvoltage tolerant inputs facilitate 5V to 3V translation; Ultra High Speed; tPD 2.4 ns typ into 50 pF at 5V VCC; Broad VCC Operating Range; 1.65V-5.5V; Patented noise/EMI reduction circuitry implemented; High Output Drive; ±24 mA at 3V VCC | Other | NC7SZ10L6X |
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FDMD8440L
onsemi
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1 | Max rDS(on) = 2.6 mΩ at VGS = 10 V, ID = 21 A; Max rDS(on) = 3.8 mΩ at VGS = 4.5 V, ID = 17 A; Ideal for Flexible Layout in Secondary Side Synchronous Rectification; 100% UIL Tested; Termination is Lead-free and RoHS compliant | Other | FDMD8440L |
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MMBD717LT1G
onsemi
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1 | Extremely Fast Switching Speed; Extremely Low Forward Voltage 0.28 Volts (Typ) @ IF = 1 mAdc; Pb-Free Package is Available | SOT23 (3-Pin) | MMBD717LT1G |
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FFSP0665A
onsemi
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1 | Max Junction Temperature 175 °C; High Surge Current Capacity; Positive Temperature Coefficient; No Reverse Recovery / No Forward Recovery | Transistor Outline, Vertical | FFSP0665A |
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FODM214A
onsemi
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1 | Current Transfer Ratio Ranges from 20 to 400% at IF = ±1mA, VCE = 5 V, TA = 25ºC - FODM214 - 20 to 400% - FODM214A - 50 to 250%; Safety and Regulatory Approvals: - UL1577, 3750 VACRMS for 1 min - DIN EN/IEC60747-5-5, 565 V Peak Working Insulation Voltage; Applicable to Infrared Ray Reflow, 260ºC | Other | FODM214A |
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FXL4TD245BQX
onsemi
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1 | Non-preferential power-up sequencing; either VCC may be powered-up first ; ESD Protection Exceeds: ; Outputs switch to 3-STATE if either VCC is at GND ; 200V MM ESD (per JESD22-A115 & ESD STM5.2); Outputs remain in 3-STATE until active VCC level is reached ; Power-off protection ; 1kV CDM ESD (per ESD STM 5.3); 4kV HBM ESD(per JESD22-A114 & Mil Std 883e 3015.7); Fully configurable: Inputs track VCC level ; 8kV HBM I/O to GND ESD (per JESD22-A114 & Mil Std 883e 3015.7); Packaged in 16-terminal DQFN (2.5mm x | Other | FXL4TD245BQX |
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NTHL067N65S3H
onsemi
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1 | 700 V @ TJ = 150°C; Ultra Low Gate Charge (Typ. Qg = 80 nC); Low Effective Output Capacitance (Typ. Coss(eff.) = 691 pF); Fast switching performance with robust body diode; 100% Avalanche Tested; RoHS Compliant; Typ. RDS(on) = 55 m Ω; Internal Gate Resistance: 0.6 Ω | Transistor Outline, Vertical | NTHL067N65S3H |
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BC548B
onsemi
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1 | Obsolete - NPN Bipolar Transistor | Other | BC548B |
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NL3V1T34MU1TCG
onsemi
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1 | 1-Bit Dual-Supply Level Translator ,UDFN6, 1.45x1, 0.5P | Other | NL3V1T34MU1TCG |
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NRVBAF260T3G
onsemi
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1 | Diode 60 V 2A Surface Mount SMA-FL,150°C Operating Junction Temperature,Storage Temperature Range Tstg −55 to +150 °C | Small Outline Diode Flat Lead | NRVBAF260T3G |
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MPSH10
onsemi
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1 | RF Transistor NPN 25V 650MHz 350mW Through Hole | Other | MPSH10 |
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NLSX5011AMUTAG
onsemi
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1 | These are PbFree devices; Wide VCC, VL Operating Range: 0.9 V to 4.5 V; VL and VCC are independent. VL may be greater than, equal to, or less than VCC; High 100 pF Capacitive Drive Capability; HighSpeed with 140 Mb/s Guaranteed Date Rate for VCC, VL > 1.8 V; Low Bit to Bit Skew; Overvoltage Tolerant Enable and I/O Pins; Nonpreferential Power Up Sequencing; Power Off Protection; Small packaging; UDFN-6 (1.45mm x 1.0mm) and (1.2mm x 1.0mm) | Other | NLSX5011AMUTAG |
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