Showing 25 of 116445 results
| Image | Part Number | D.S | Description | Package Category | Prices / Stock | Model | Action |
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| Image | Part Number | D.S | Description | Package Category | Prices / Stock | Model | Action |
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NTMJS2D5N06CLTWG
onsemi
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1 | Power MOSFET 60 V, 2.5 mΩ, 150 A, Single N-Channel | Other | NTMJS2D5N06CLTWG |
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SZBZX84C33LT1G
onsemi
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1 | 250 mW Rating on FR-4 or FR-5 Board; Zener Breakdown Voltage Range - 2.4 V to 75 V; Package Designed for Optimal Automated Board Assembly; Small Package Size for High Density Applications; ESD Rating of Class 3 (>16 KV) per Human Body Model; Mechanical Characteristics:; CASE: Void-free, transfer-molded, thermosetting plastic case; FINISH: Corrosion resistant finish, easily solderable; MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES: 260°C for 10 Seconds; POLARITY: Cathode indicated by polarity band; FLAMMAB | SOT23 (3-Pin) | SZBZX84C33LT1G |
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NFCS1060L3TT
onsemi
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1 | Cross-conduction protection; Integrated bootstrap diodes and resistors; Simple thermal design with PFC and Inverter stage in one package. | Other | NFCS1060L3TT |
3
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RB751S40T5G
onsemi
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1 | Extremely Fast Switching Speed; Extremely Low Forward Voltage: 0.28 V (Typ) @ IF = 1.0 mAdc; Low Reverse Current; Lead−Free Plating; These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant | Small Outline Diode Flat Lead | RB751S40T5G |
3
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FCPF380N60E
onsemi
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1 | 650V @TJ = 150°C; 100% avalanche tested; Max. RDS(on) = 380mΩ; Ultra low gate charge ( Typ. Qg = 34nC ); Low effective output capacitance ( Typ. Coss.eff = 97pF ) | Transistor Outline, Vertical | FCPF380N60E |
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NTB7D3N15MC
onsemi
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1 | Shielded Gate MOSFET Technology; Max RDS(on) = 7.3 mΩ at VGS = 10 V, ID = 62 A; 50% Lower Qrr than other MOSFET Suppliers; Lowers Switching Noise/EMI; 100% UIL Tested; These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant | Other | NTB7D3N15MC |
3
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NCV8715MX33TBG
onsemi
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1 | Operating Input Voltage Range: 2.5 V to 24 V; 1.2 V, 1.5 V, 1.8 V, 2.5 V, 3.0 V, 3.3 V, 5.0 V Fixed Output Voltage Versions; Low 4.7 uA typ Quiescent Current; PSRR 54 dB at 1 kHz; Thermal Shutdown and Current Liimit Protections; Available in XDFN6 1.5 x 1.5 mm and SC-70 packages | Other | NCV8715MX33TBG |
3
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NCV551SN36T1G
onsemi
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1 | Low quiescent current of 4.0 µA typical; Maximum Operating Voltage of 12 V; Low Output Voltage Option; High Accuracy Output Voltage of 2.0%; Industrial Temperature Range of –40° C to 85° C | SOT23 (5-Pin) | NCV551SN36T1G |
3
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CAV24C16C4ATR
onsemi
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1 | EEPROM Memory IC 16Kbit I2C 400 kHz 900 ns 4-WLCSP (0.84x0.86) | Other | CAV24C16C4ATR |
3
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NSR05301MX4T5G
onsemi
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1 | Smallest Package Available (01005); 0.445mm x 0.24mm; 500 mA of Continuous Forward Current; Low Forward Voltage Drop, VF = 430 mV (Typical) @ IF = 200 mA; Low Reverse Current, 25 µA (Typical) @ VR = 30 V; Low trr = 9 ns Typical; Low Capacitance, 19 pF (Typical) | Other | NSR05301MX4T5G |
2
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NCV833DR2G
onsemi
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1 | High Gain Bandwidth Product: 15 MHz; Low Input Offset Voltage: 0.3 mV; Low T.C. of Input Offset Voltage: 2.0 µV/°C; Dual Supply Operation; High Slew Rate: 7.0 V/µs; Low Distortion: 0.002%; Low Voltage Noise: 4.5 nV/ √ Hz; Excellent Frequency Stability; Pb-Free Packages are Available | Small Outline Packages | NCV833DR2G |
3
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MM5Z3V6T1G
onsemi
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1 | Standard Zener Breakdown Voltage Range: 2.4V to 75V; Steady State Power Rating of 500mW; Small Body Outline Dimensions: 0.047in x 0.032in (1.20mm x 0.80mm); Low Body Height: 0.028in (0.7mm); ESD Rating of Class 3 (>16kV) Human Body Model; Epoxy Meets UL94, VO; Cathode Indicated by Polarity Band; Lead Finish: 100% Matte Sn (Tin); Qualified Maximum Reflow Temperature: 260C; Device Meets MSL 1 Requirements; Pb-Free Packages are Available; AEC-Q101 Qualified and PPAP Capable; SZ Prefix for Automotive and Other | Small Outline Diode Flat Lead | MM5Z3V6T1G |
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GBU6A
onsemi
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1 | UL certified, UL #E258596; Glass-Passivated Junction; Ideal for Printed Circuit Bboard; Reliable Low-Cost Construction Utilizing Molded Plastic Technique; Surge Overload Rating: 175 A peak | Other | GBU6A |
3
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MBR40L60CTG
onsemi
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1 | Low Forward Voltage; Low Power Loss/High Efficiency; 40 A Total (20 A Per Diode Leg); Guard-Ring for Stress Protection; These are Pb-Free Devices; High Surge Capability | Transistor Outline, Vertical | MBR40L60CTG |
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MUN5232DW1T1G
onsemi
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1 | Simplifies Circuit Design; Reduces Board Space; Reduces Component Count; S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable; These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant | SOT23 (6-Pin) | MUN5232DW1T1G |
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1SMB5915BT3G
onsemi
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1 | Zener Voltage Range - 3.3 V to 200 V; ESD Rating of Class 3 (>16 KV) per Human Body Model; Flat Handling Surface for Accurate Placement; Package Design for Top Side or Bottom Circuit Board Mounting Mechanical Characteristics:; CASE: Void-free, transfer-molded plastic; FINISH: All external surfaces are corrosion resistant with readily solderable leads; MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES: 260°C for 10 seconds; LEADS: Modified L-Bend providing more contact area to bond pads; POLARITY: Cathode indi | Diodes Moulded | 1SMB5915BT3G |
3
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NVBG150N65S3F
onsemi
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1 | Low RDS(on); Low QG and Capacitance; AEC−Q101 Qualified and PPAP Capable; RoHS Compliant | Other | NVBG150N65S3F |
3
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MC33375ST-1.8T3G
onsemi
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1 | Internal Current and Thermal Limiting; Low Input-to-Output Voltage Differential of 25 mV at IO = 10 mA, and 260 mV at IO = 300 mA; Logic Level ON/OFF Control; Low Quiescent Current (0.3 mA in OFF mode; 125 mA in ON mode); Stable with Output Capacitance of only 0.33 mF for 2.5 V Output Voltage; Extremely Tight Line and Load Regulation | SOT223 (3-Pin) | MC33375ST-1.8T3G |
3
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FDMS0309AS
onsemi
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1 | RoHS Compliant ; 100% UIL tested ; Advanced package and silicon combination for low rDS(on) and high efficiency ; SyncFET Schottky Body Diode ; Max rDS(on) = 4.3 mΩ at VGS = 4.5 V, ID = 19 A ; MSL1 Robust Package Design ; Max rDS(on) = 3.5 mΩ at VGS = 10 V, ID = 21 A | Other | FDMS0309AS |
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SZMMBZ5V6ALT1G
onsemi
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1 | SOT-23 Package Allows Either Two Separate Unidirectional Configurations or a Single Bidirectional Configuration; Working Peak Reverse Voltage Range - 3 V to 26 V; Standard Zener Breakdown Voltage Range - 5.6 V to 33 V; Peak Power - 24 or 40 Watts @ 1.0 ms (Unidirectional); ESD Rating of Class N (exceeding 16 kV) per the Human Body Model; Maximum Clamping Voltage @ Peak Pulse Current; Low Leakage < 5.0 µ A; Flammability Rating UL 94V-O Mechanical Characteristics:; CASE: Void-free, transfer-molded, thermosett | SOT23 (3-Pin) | SZMMBZ5V6ALT1G |
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SZESD7481MUT5G
onsemi
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1 | These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant; UltraLow Capacitance 0.25 pF; Insertion Loss: 0.030 dBm; Low Dynamic Resistance < 1Ω; IEC6100042 Level 4 ESD Protection; These Devices are PbFree, Halogen Free/BFR Free and are RoHS Compliant; Low Clamping Voltage; Stand−off Voltage: 3.3 V; Low Leakage; Response Time is < 1 ns; SZ Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable | Other | SZESD7481MUT5G |
3
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NTF3055L108T1G
onsemi
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1 | RoHS Compliant | SOT223 (3-Pin) | NTF3055L108T1G |
3
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STK681-360-E
onsemi
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1 | Obsolete - Bipolar Ultra-micro Stepping Motor Driver | Other | STK681-360-E |
3
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MBR1560CT
onsemi
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1 | High Surge Capacity; Guard Ring for Over-Voltage Protection (OVP); Metal Silicon Junction, Majority Carrier Conduction; High Current Capacity, Low Forward Voltage Drop; Low Power Loss, High Efficiency | Transistor Outline, Vertical | MBR1560CT |
3
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MMSZ16T1G
onsemi
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1 | 500 mW Rating on FR-4 or FR-5 Board; Wide Zener Reverse Voltage Range - 2.4 V to 56 V; Package Designed for Optimal Automated Board Assembly; Small Package Size for High Density Applications; ESD Rating of Class 3 (exceeding 16 kV) per the Human Body Model Mechanical Characteristics:; CASE: Void-free, transfer-molded, thermosetting plastic case; FINISH: Corrosion resistant finish, easily solderable; MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES: 260°C for 10 Seconds; POLARITY: Cathode indicated by polarit | Small Outline Diode | MMSZ16T1G |
3
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Download Model |