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Image	Part Number	D.S	Description	Package Category	Prices / Stock	Model	Action
	FJP13009TU onsemi	1	High Switching Speed; High-Voltage Capability	Transistor Outline, Vertical	FJP13009TU	3D model available Symbol and footprint available 3	1 Download Model
	NCV5500DT15RKG onsemi	1	Obsolete - LDO Regulator, 500 mA, Low Dropout, High PSRR	Other	NCV5500DT15RKG	3D model not available Symbol and footprint available 2	1 Download Model
	MC33340DG onsemi	1	Obsolete - NiCd/NiMH Battery Fast Charge Controller	Small Outline Packages	MC33340DG	3D model available Symbol and footprint available 3	1 Download Model
	FCPF125N65S3 onsemi	1	700 V @ TJ = 150 oC; Ultra Low Gate Charge (Typ. Qg = 44 nC); Low Effective Output Capacitance (Typ. Coss(eff.) = 405 pF); Optimized Capacitance; Internal Gate Resistance: 4 ohm; Typ. RDS(on) = 105 mΩ; 100% Avalanche Tested; RoHS Compliant	Transistor Outline, Vertical	FCPF125N65S3	3D model available Symbol and footprint available 3	1 Download Model
	HCPL2531SDVM onsemi	1	Superior CMR of 15,000 V/µs Minimum (HCPL4503M); CTR Guaranteed 0°C to 70°C; Dual-Channel: HCPL2530M, HCPL2531M; No Base Connection for Improved Noise Immunity (HCPL4503M); High speed –1 MBit/s; Safety and Regulatory Approvals - UL1577, 5,000 VACRMS for 1 Minute - DIN EN/IEC60747-5-5	Small Outline Packages	HCPL2531SDVM	3D model not available Symbol and footprint available 2	1 Download Model
	FT7522L6X onsemi	1	Supervisor Open Drain or Open Collector Channel 6-MicroPak	Other	FT7522L6X	3D model available Symbol and footprint available 3	1 Download Model
	NCV5703BDR2G onsemi	1	High Current Output (+4.0/-6.0 A) at IGBT Miller Plateau voltages; Low VOH and VOL; DESAT Protection with Programmable Delay; Active Miller Clamp (NCV5703A only)	Small Outline Packages	NCV5703BDR2G	3D model available Symbol and footprint available 3	1 Download Model
	SZ1SMB5935BT3G onsemi	1	Zener Voltage Range - 3.3 V to 200 V; ESD Rating of Class 3 (>16 KV) per Human Body Model; Flat Handling Surface for Accurate Placement; Package Design for Top Side or Bottom Circuit Board Mounting Mechanical Characteristics:; CASE: Void-free, transfer-molded plastic; FINISH: All external surfaces are corrosion resistant with readily solderable leads; MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES: 260°C for 10 seconds; LEADS: Modified L-Bend providing more contact area to bond pads; POLARITY: Cathode indi	Diodes Moulded	SZ1SMB5935BT3G	3D model available Symbol and footprint available 3	1 Download Model
	NTSJ30U100CTG onsemi	1	Obsolete - Schottky Rectifier, Low Forward Voltage, Dual, 30 A, 80 V	Transistor Outline, Vertical	NTSJ30U100CTG	3D model available Symbol and footprint available 3	1 Download Model
	NVTFWS003N04XMTAG onsemi	1	RoHS Compliant; Small Footprint (3 x3 mm); Low RDS(on); Low QG and Capacitance; Wettable Flank Option; AEC−Q101 Qualified and PPAP Capable	Other	NVTFWS003N04XMTAG	3D model available Symbol and footprint available 3	1 Download Model
	FMB2222A onsemi	1	ON SEMICONDUCTOR - FMB2222A - BIPOLAR TRANSISTOR, QUAD NPN, 40V SSOT-6	SOT23 (6-Pin)	FMB2222A	3D model available Symbol and footprint available 3	1 Download Model
	MM74HC74AM onsemi	1	Low input current: 1 µA maximum; Fanout of 10 LS-TTL loads; Typical propagation delay: 20 ns; Wide power supply range: 2-6V; Low quiescent current: 40 µA maximum (74HC Series)	Other	MM74HC74AM	3D model available Symbol and footprint available 3	1 Download Model
	NTNS3C94NZT5G onsemi	1	Ultra Low Profile XLLGA3 0.62 x 0.62 x 0.4 mm Package; Ultra Low RDS(on); 1.8 V Gate Voltage Rating; RoHS Compliant	Other	NTNS3C94NZT5G	3D model available Symbol and footprint available 3	1 Download Model
	FAN53611AUC18X onsemi	1	"600 mA or 1 A Output Current Capability; Forced PWM and External Clock Synchronization; 24 µA Typical Quiescent Current; 2.3 V to 5.5 V Input Voltage Range; Low Ripple Light-Load PFM Mode; Internal Soft-Start; 6 MHz Fixed-Frequency Operation; 6-Bump WLCSP, 0.4 mm Pitch"; Best-in-Class Load Transient Response; Best-in-Class Efficiency; 0.8 V to 2 V Fixed Output Voltage; Optional Output Discharge; Input Under-Voltage Lockout (UVLO); Thermal Shutdown and Overload Protection	BGA	FAN53611AUC18X	3D model available Symbol and footprint available 3	1 Download Model
	FDMS2D5N08C onsemi	1	Shielded Gate MOSFET Technology; Max rDS(on) = 2.7 mΩ at VGS = 10 V, ID = 68 A; Max rDS(on) = 6.7 mΩ at VGS = 6 V, ID = 34 A; 50% lower Qrr than other MOSFET suppliers; Lower switching noise/EMI; MSL1 robust package design; 100% UIL tested; RoHS Compliant	Other	FDMS2D5N08C	3D model available Symbol and footprint available 3	1 Download Model
	FQA36P15 onsemi	1	Low Gate Charge ( Typ. 81nC); 100% Avalanche Tested; Low Crss ( Typ. 110pF); -36A, -150V RDS(on) = 90mΩ(Max.) @VGS = -10 V, ID = -18A; 175°C Maximum Junction Temperature Rating	Transistor Outline, Vertical	FQA36P15	3D model available Symbol and footprint available 3	1 Download Model
	CAT24C32WI-GT3 onsemi	1	Supports Standard, Fast and Fast-Plus I2C Protocol; 1.7 V to 5.5 V Supply Voltage Range; 32-Byte Page Write Buffer; Hardware Write Protection for entire memory; Schmitt Triggers and Noise Suppression Filters on I²C Bus Inputs (SCL and SDA); Low power CMOS technology; 1,000,000 program/erase cycles; 100 year data retention; 8-lead SOIC and TSSOP, WLCSP 4 and 5-ball and 8-pad UDFN packages; Industrial temperature range; This Device is PbFree, Halogen Free/BFR Free, and RoHS Compliant	Small Outline Packages	CAT24C32WI-GT3	3D model available Symbol and footprint available 3	1 Download Model
	NVMTS1D2N08H onsemi	1	Small Footprint (8x8 mm); Low RDS(on); Low QG and Capacitance; Wettable Flank Option; AEC−Q101 Qualified and PPAP Capable; RoHS Compliant	Other	NVMTS1D2N08H	3D model available Symbol and footprint available 3	1 Download Model
	SZMMSZ5261BT1G onsemi	1	500 mW Rating on FR-4 or FR-5 Board; ESD Rating of Class 3 (exceeding 16 kV) per the Human Body Model Mechanical Characteristics:; Package Designed for Optimal Automated Board Assembly; Small Package Size for High Density Applications; Wide Zener Reverse Voltage Range - 2.4 V to 110 V; General Purpose, Medium Current; CASE: Void-free, transfer-molded, thermosetting plastic case; FINISH: Corrosion resistant finish, easily solderable; MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES: 260?C for 10 Seconds; POLA	Small Outline Diode	SZMMSZ5261BT1G	3D model available Symbol and footprint available 3	1 Download Model
	MC74VHC1G04DFT2G-Q onsemi	1	Balanced Propagation Delays; Pb-Free Packages are Available; Designed for 2.0 V to 5.5 V VCC Operation; High Speed: tPD = 3.5ns (Typ) at Vcc = 5V; Low Power Dissipation: ICC = 1µA (Max) at TA = 25°C; Power Down Protection Provided on Inputs; Pin and Function Compatible with Other Standard Logic Families; Chip Complexity: FETs = ≤ 100	SOT23 (5-Pin)	MC74VHC1G04DFT2G-Q	3D model available Symbol and footprint available 3	1 Download Model
	NCV551SN33T1G onsemi	1	Low quiescent current of 4.0 µA typical; Maximum Operating Voltage of 12 V; Low Output Voltage Option; High Accuracy Output Voltage of 2.0%; Industrial Temperature Range of –40° C to 85° C	SOT23 (5-Pin)	NCV551SN33T1G	3D model available Symbol and footprint available 3	1 Download Model
	MC74ACT373DTR2G onsemi	1	ACT373 Has TTL Compatible Inputs; 3-State Outputs for Bus Interfacing; Eight Latches in a Single Package; Outputs Source/Sink 24 mA; Pb-Free Packages are Available	Small Outline Packages	MC74ACT373DTR2G	3D model available Symbol and footprint available 3	1 Download Model
	TIP42CTU onsemi	1	Last Shipments - PNP Bipolar Power Transistor	Transistor Outline, Vertical	TIP42CTU	3D model available Symbol and footprint available 3	1 Download Model
	AMIS-49250-XTP onsemi	1	All node power can be supplied by the bus, via the AMIS-492x0; Current consumption 500 uA (typ); VCC voltage: 6.2 V to 4.75 V; VDD voltage: 5.5 V to 2.7 V; Compatible with IEC 1158-2 and ISA 50.02; Shunt regulator; Voltage reference (internal only); Series regulator; Bandpass filter; Slew rate control; Segment current control; Low voltage detection; Carrier detect; Data rate: 31.25 kbps voltage mode; Dual voltage supply: 3.0 to 6.2 V	Quad Flat No-Lead	AMIS-49250-XTP	3D model available Symbol and footprint available 3	1 Download Model
	MJH11022G onsemi	1	Monolithic Construction; Collector-Emitter Sustaining Voltage VCEO(sus) = 150 Vdc (Min) MJH11018, 17 VCEO(sus) = 200 Vdc (Min) - MJH11020, 19 VCEO(sus) = 250 Vdc (Min) - MJH11022, 21; Low Collector-Emitter Saturation Voltage VCE(sat) = 1.2 V (Typ) @ IC = 5.0 A VCE(sat) = 1.8 V (Typ) @ IC = 10 A; High DC Current Gain @ 10 Adc - hFE = 400 Min (All Types); Pb-Free Packages are Available	Transistor Outline, Vertical	MJH11022G	3D model available Symbol and footprint available 3	1 Download Model
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