Showing 25 of 132190 results
| Image | Part Number | D.S | Description | Package Category | Prices / Stock | Model | Action |
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| Image | Part Number | D.S | Description | Package Category | Prices / Stock | Model | Action |
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NCV47701DAJR2G
onsemi
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1 | Last Shipments - LDO Regulator, 350 mA, Low Dropout, High PSRR | Small Outline Packages | NCV47701DAJR2G |
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NTMFS6B14NT1G
onsemi
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1 | Obsolete - Single N−Channel Power MOSFET 100V, 50A, 14mΩ | Other | NTMFS6B14NT1G |
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NRVS2M
onsemi
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1 | High-Current Capability, 2 A Rated; Fast Response: 2 μs Trr; Low-Forward Voltage Drop, 1.15 V VF Max at 2 A; High-Surge Current Capability, 50 A2s IFSM; Glass Passivated Junction; UL Certified, UL #E258596; NRV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; These Devices are Pb−Free and are RoHS Compliant | Diodes Moulded | NRVS2M |
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SZ1SMA5921BT3G
onsemi
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1 | Ideal Replacement for MELF Packages Mechanical Characteristics:; Case: Void-free, transfer-molded plastic; Finish: All external surfaces are corrosion resistant with readily solderable leads; Maximum Case Temperature for Soldering Purposes: 260 °C for 10 seconds; POLARITY: Cathode indicated by molded polarity notch or cathode band.; FLAMMABILITY RATING: UL94 V–0; Pb-Free Packages are Available; AEC-Q101 Qualified and PPAP Capable; SZ Prefix for Automotive and Other Applications Requiring Unique Site and Con | Diodes Moulded | SZ1SMA5921BT3G |
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NC7SZ14L6X-L22175
onsemi
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1 | High Output Drive: ±24mA at 3V VCC ; Broad VCC Operating Range: 1.65V to 5.5V ; Proprietary Noise/EMI Reduction Circuitry ; Matches Performance of LCX when Operated at 3.3V VCCCC ; Over-Voltage Tolerance Inputs Facilitate 5V to 3V Translation ; Power Down High Impedance Inputs/Outputs ; Ultra-High Speed: tPD 3.7ns (Typical) into 50pF at 5V VCC ; Ultra-Small MicroPak™ Packages ; Space-Saving SOT23 and SC70 Packages | Other | NC7SZ14L6X-L22175 |
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BD675G
onsemi
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1 | Obsolete - Medium Power PNP Darlington Bipolar Power Transistor | Transistor Outline, Vertical | BD675G |
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NTTFS010N10MCLTAG
onsemi
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1 | MOSFET - Power, N-Channel, Shielded Gate, POWERTRENCH, 100 V, 50 A, 10.6 m | Other | NTTFS010N10MCLTAG |
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NCP1522BMUTBG
onsemi
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1 | Obsolete - Buck Converter, DC-DC, 3 MHz, 600 mA | Small Outline No-lead | NCP1522BMUTBG |
3
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NDSH30120C-F155
onsemi
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1 | Low Vf @ TJ:175 °C; Max Junction Temperature 175 °C; Avalanche Rated 237 mJ; High Surge Current Capacity; Positive Temperature Coefficient; No Reverse Recovery / No Forward Recovery | Transistor Outline, Vertical | NDSH30120C-F155 |
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MMBT2369LT1G
onsemi
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1 | Bipolar (BJT) Transistor NPN 15 V 200 mA 225 mW Surface Mount SOT-23-3 (TO-236) | SOT23 (3-Pin) | MMBT2369LT1G |
3
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SL24T1G
onsemi
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1 | TVS Diode in Series with a Compensating Diode Offers < 5 pF Capacitance; ESD Protection Meeting IEC 61000–4–2, 4–4, 4–5; Peak Power Rating of 300 Watts, 8 x 20 µ s; Bi–Direction Protection Can Be Achieved By Using Two Devices; Flammability Rating UL 94V–0; Mechanical Characteristics:; CASE: Void-free, transfer-molded, thermosetting plastic case; FINISH: Corrosion resistant finish, easily solderable; MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES: 260°C for 10 Seconds; Package designed for optimal automated | SOT23 (3-Pin) | SL24T1G |
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FQD12N20TM
onsemi
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1 | Improved dv/dt capability; Fast switching; 9.0A, 200V, RDS(on) = 0.28Ω @VGS = 10 V; Low gate charge ( typical 18 nC); 100% avalanche tested; Low Crss ( typical 18 pF) | Other | FQD12N20TM |
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NCP186AMX300TAG
onsemi
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1 | 1.8 V to 5.5 V Operating Input Voltage Range; Several Fixed Output Voltage Options and others available upon request in range from 1.2 V to 3.9 V; Low Quiescent Current of Typ. 90 µA; Very Low Dropout: 100 mV Typ. at Iout = 1 A (3.0V version); High 75 dB at 1 kHz PSRR; Internal Soft-Start; ±1.0% Accuracy in -40 to 85degC temperature range; Thermal Shutdown and Current Limit Protections; Stable with Small 1 µF Ceramic Capacitors | Other | NCP186AMX300TAG |
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FGH75T65SQDNL4
onsemi
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1 | TJmax = 175°C; Improved Gate Control Lowers Switching Losses; Separate Emitter Drive Pin; TO-247-4L for Minimal Eon Losses; Optimized for High Speed Switching; These are Pb-Free Devices; Extremely Efficient Trench with Field Stop Technology | Other | FGH75T65SQDNL4 |
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FQT1N80TF-WS
onsemi
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1 | RoHS compliant; 100% avalanche tested; 0.2A, 800V, RDS(on) = 15.5Ω(Typ.) @VGS = 10 V, ID = 0.1A; Low gate charge ( Typ. 5.5nC); Low Crss ( Typ. 2.7pF) | SOT223 (3-Pin) | FQT1N80TF-WS |
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FCH023N65S3L4
onsemi
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1 | 700 V @ TJ = 150 oC; Kelvin contact; Ultra Low Gate Charge (Typ. Qg = 222 nC); Low Effective Output Capacitance (Typ. Coss(eff.) = 1980 pF); Optimized Capacitance; Kelvin contact; Typ. RDS(on) = 19.5 mΩ; 100% Avalanche Tested; RoHS Compliant | Other | FCH023N65S3L4 |
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FAN3122TMPX
onsemi
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1 | 20ns Typical Propagation Delay Time; 23ns/19ns Typical Rise/Fall Times with 10nF Load; Internal Resistors Turn Driver Off If No Inputs; 9.7A Sink / 7.1A Source at VOUT = 6V; MillerDrive™ Technology; 4.5 to 18V Operating Range; Available in Thermally Enhanced 3x3mm 8-Lead MLP or 8-Lead SOIC Package (Pb-Free Finish); Choice of TTL or CMOS Input Thresholds; 11.4A Peak Sink at VDD = 12V; Industry-Standard Pin-out with Enable Input; Inverting Configuration (FAN3121) and Non-Inverting Configuration (FAN3122); Rat | Small Outline No-lead | FAN3122TMPX |
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1SMB5941BT3G
onsemi
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1 | Zener Voltage Range - 3.3 V to 200 V; ESD Rating of Class 3 (>16 KV) per Human Body Model; Flat Handling Surface for Accurate Placement; Package Design for Top Side or Bottom Circuit Board Mounting Mechanical Characteristics:; CASE: Void-free, transfer-molded plastic; FINISH: All external surfaces are corrosion resistant with readily solderable leads; MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES: 260°C for 10 seconds; LEADS: Modified L-Bend providing more contact area to bond pads; POLARITY: Cathode indi | Diodes Moulded | 1SMB5941BT3G |
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NCS5651MNTXG
onsemi
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1 | Rail-to-rail : drop of only +/-1 V with Iout = 1.5A; VBB supply voltage 6-12 V; Flexible 4th-order filtering; Current-limit set with one resistor; Diagnostic flags level shitfted to VCC to simplify interface with external MCU - thermal warning flag with flexible threshold setting - thermal error flag and hutdown - overcurrent flag; Enable/shutdown control; Extended junction temperature range : -40 °C to +125 °C; Small package : 20-pin 4x4x1 mm3 NQFP with exposed thermal pad; Optimized for operation in the C | Quad Flat No-Lead | NCS5651MNTXG |
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NC7SV125P5X
onsemi
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1 | High Static Drive (IOH/IOL)±24 mA @ 3.00V VCC±18 mA @ 2.30V VCC±6 mA @ 1.65V VCC±4 mA @ 1.4V VCC±2 mA @ 1.1V VCC±0.1 mA @ 0.9V VCC; Ultra low dynamic power; 0.9V to 3.6V VCC supply operation; Power-Off high impedance inputs and outputs; 3.6V overvoltage tolerant I/O's at VCC from 0.9V to 3.6V; Uses patented Quiet Series™ noise/EMI reduction circuitry; Extremely High Speed tPD1.0 ns typ for 2.7V to 3.6V VCC2.0 ns typ for 2.3V to 2.7V VCC3.0 ns typ for 1.65V to 1.95V VCC3.5 ns typ for 1.4V to 1.6V VCC6.0 ns t | SOT23 (5-Pin) | NC7SV125P5X |
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DFB2060
onsemi
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1 | UL Certificate # E326243; Ideal for Printed Circuit Board; Glass Passivated Junction; Plastic Material has Underwriters Laboratory Flammability Classification 94V-0; Surge Overload Rating to 250 Amperes Peak; Isolated Voltage from Case to Lead Over 2500 Volts; High Case Dielectric Strength of 2000 VRMS; Reliable Low Cost Construction | Other | DFB2060 |
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BD138G
onsemi
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1 | BD136, BD138, BD140 are complementary with BD135, BD137, BD139; Minimum DC Current Gain - hFE = 40 @ IC = 0.15 A; These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant | Transistor Outline, Vertical | BD138G |
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M74VHC1GU04DTT1G
onsemi
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1 | Designed for 2.0 V to 5.5 V VCC Operation; High Speed: tPD = 2.5ns (Typ) at VCC = 5V; Low Power Dissipation: ICC = 1µA (Max) at TA = 25°C; Power Down Protection Provided on Inputs; Balanced Propagation Delays; Pin and Function Compatible with Other Standard Logic Families; Chip Complexity: FETs = 105; Pb-Free Packages are Available | SOT23 (5-Pin) | M74VHC1GU04DTT1G |
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HCPL2531SDM
onsemi
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1 | Superior CMR of 15,000 V/µs Minimum (HCPL4503M); CTR Guaranteed 0°C to 70°C; Dual-Channel: HCPL2530M, HCPL2531M; No Base Connection for Improved Noise Immunity (HCPL4503M); High speed –1 MBit/s; Safety and Regulatory Approvals - UL1577, 5,000 VACRMS for 1 Minute - DIN EN/IEC60747-5-5 | Other | HCPL2531SDM |
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FDMC8032L
onsemi
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1 | Max rDS(on) = 20 mΩ at VGS = 10 V, ID = 7 A; Lower Switching Losses; Low Inductance Packaging Shortens Rise/Fall Times; Termination is Lead-free and RoHS Compliant; Max rDS(on) = 27 mΩ at VGS = 4.5 V, ID = 6 A; 100% Rg Tested | Other | FDMC8032L |
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