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Image	Part Number	D.S	Description	Package Category	Prices / Stock	Model	Action
	2N6388G onsemi	1	High DC Current Gain - hFE=2500 (Typ) @Ic=4.0 Adc ; Collector-Emitter Sustaining Voltage - @ 100 mAdc Vceo(sus) = 60 Vdc (Min) - 2N6387 Vceo (sus) = 80 Vdc (Min) - 2N6388; Collector-Emitter Sustaining Voltage - @ 100 mAdc Vceo(sus) = 60 Vdc (Min) - 2N6387 Vceo (sus) = 80 Vdc (Min) - 2N6388; Low Collector-Emitter Saturation Voltage- Vce(sat) = 2.0 Vdc (Max) @ Ic=5.0 Adc; Monolithic Construction with Built-In Base-Emitter Shunt Resistors; T0-220AB Compact Package; Epoxy meets UL94, VO @ 1/8 inch; ESD Ratings	Transistor Outline, Vertical	2N6388G	3D model available Symbol and footprint available 3	1 Download Model
	NVMFWS2D3N04XMT1G onsemi	1	Low QG and Capacitance; Small Footprint (5x6 mm); Low RDS(on); Wettable Flank Option; AEC−Q101 Qualified and PPAP Capable; RoHS Compliant	Other	NVMFWS2D3N04XMT1G	3D model available Symbol and footprint available 3	1 Download Model
	NCV1034DR2G onsemi	1	Input voltage up to 100V; 2 A Output Drive Capability; 1.25 V +/-2.5% feedback voltage across temperature; External Frequency Synchronization; Programmable switching frequency up to 500 kHz; AEC-Q100 Qualified	Small Outline Packages	NCV1034DR2G	3D model available Symbol and footprint available 3	1 Download Model
	NLAS4717EPMTR2G onsemi	1	Obsolete - Analog Switch, High Bandwidth, Dual SPDT	Other	NLAS4717EPMTR2G	3D model available Symbol and footprint available 3	1 Download Model
	NRVTSA3100ET3G onsemi	1	NRV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable; Low Power Loss and Lower Operating Temperature; Fine Lithography Trench−based Schottky Technology for Very Low Forward Voltage and Low Leakage; Fast Switching with Exceptional Temperature Stability; Higher Efficiency for Achieving Regulatory Compliance; High Surge Capability; These are Pb−Free and Halide−Free Devices	Diodes Moulded Non Polarised	NRVTSA3100ET3G	3D model available Symbol and footprint available 3	1 Download Model
	MMSZ5267BT1G onsemi	1	500 mW Rating on FR-4 or FR-5 Board; ESD Rating of Class 3 (exceeding 16 kV) per the Human Body Model Mechanical Characteristics:; Package Designed for Optimal Automated Board Assembly; Small Package Size for High Density Applications; Wide Zener Reverse Voltage Range - 2.4 V to 110 V; General Purpose, Medium Current; CASE: Void-free, transfer-molded, thermosetting plastic case; FINISH: Corrosion resistant finish, easily solderable; MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES: 260?C for 10 Seconds; POLA	Small Outline Diode	MMSZ5267BT1G	3D model available Symbol and footprint available 3	1 Download Model
	NUP2301MW6T1G onsemi	1	Low Capacitance (2.0 pF Max Between I/O Lines; Single Package Integration Design; Provides ESD Protection for JEDEC Standards JESD22; Protection for IEC61000-4-2 (Level 4); Ensures Data Line Speed and Integrity; Directs the Transient to Either Positive Side or to Ground; AEC-Q101 Qualified and PPAP Capable; SZ Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements	SOT23 (6-Pin)	NUP2301MW6T1G	3D model available Symbol and footprint available 3	1 Download Model
	FXL4T245BQX onsemi	1	Packaged in 14-terminal DQFN (2.5mm x 3.0mm) package ; Fully configurable, inputs track VCC level ; Outputs switch to 3-STATE if either VCC is at GND ; 1kV CDM ESD (per ESD STM 5.3) ; Power-off protection ; Outputs remain in 3-STATE until active VCC level is reached ; Control inputs (T/R#, OE#) levels are referenced to VCCA voltage ; No power-up sequencing required ; Non-preferential power-up sequencing; either VCC may be powered-up first ; Bi-directional interface between any 2 levels from 1.1V to 3.6V ; 2	Other	FXL4T245BQX	3D model available Symbol and footprint available 3	1 Download Model
	NCP5109AMNTWG onsemi	1	Obsolete - MOSFET / IGBT Drivers, Dual Input, High Voltage, High and Low Side, 200 V	Small Outline No-lead	NCP5109AMNTWG	3D model available Symbol and footprint available 3	1 Download Model
	FDV301N onsemi	1	RDS(ON) = 5 Ω @ VGS= 2.7 V; • 25 V, 0.22 A continuous, 0.5 A Peak. ; RDS(ON) = 4 Ω @ VGS= 4.5 VGS(th) < 1.06; Gate-Source Zener for ESD ruggedness. >6kV Human Body Model; Replace multiple NPN digital transistors with one DMOS FET	SOT23 (3-Pin)	FDV301N	3D model available Symbol and footprint available 3	1 Download Model
	NC7WZ240K8X onsemi	1	Ultra High Speed; tPD 2.3 ns typ into 50 pF at 5V VCC; Space saving US8 surface mount package; Power down high impedance inputs/outputs; Outputs are overvoltage tolerant in 3-STATE mode; Overvoltage tolerant inputs facilitate 5V to 3V translation; Matches the performance of LCX when operated at 3.3V VCC; Broad VCC Operating Range: 1.65V to 5.5V; High Output Drive; ±24 mA at 3V VCC; Patented noise/EMI reduction circuitry implemented; MicroPak™ Pb-Free leadless package	Small Outline Packages	NC7WZ240K8X	3D model available Symbol and footprint available 3	1 Download Model
	FSUSB30MUX onsemi	1	Low On Resistance: 6.5 Ω (Typical) ; Low Power Consumption: 1 µA (Maximum) ; Power-Off Protection when VCC = 0 V, D+/D- pins can Tolerate up to 5.5 V; 8 kV ESD Protection; 10 µA Maximum ICCT over and Expanded Control Voltage Range (VIN=2.6 V, VCC=4.3 V); Low On Capacitance: 3.7 pF (Typical); Wide -3 dB bandwidth, >720 MHz	Small Outline Packages	FSUSB30MUX	3D model available Symbol and footprint available 3	1 Download Model
	FDMC2674 onsemi	1	Low Miller charge ; Low Qrr Body Diode ; UIS Capability ( Single Pulse andRepetitive Pulse) ; Max rDS(on) = 366mΩ at VGS = 10V, ID = 1A ; RoHS Compliant ; Optimized efficiency at high frequencies ; Typ Qg = 12.7nC at VGS = 10V	Other	FDMC2674	3D model available Symbol and footprint available 3	1 Download Model
	NCV8720BMTW180TBG onsemi	1	0.5% Typical Output Voltage Accuracy; Output Current in Excess of 350 mA; Ultra-Low Dropout of Typ. 110 mV; Fixed Output Voltage options from 0.8 V to 2.1 V; 110 mV typical dropout at the full 350 mA load.; Guaranteed Output Current from 0 mA to 350 mA	Small Outline No-lead	NCV8720BMTW180TBG	3D model available Symbol and footprint available 3	1 Download Model
	HCPL0731 onsemi	1	Superior CTR-2000%; VDE 0884 recognized (file #136616); CTR guaranteed 0-70°C; ; Superior CMR-10 kV/µs; Low current - 0.5 mA; U.L. recognized (file# E90700)	Small Outline Packages	HCPL0731	3D model available Symbol and footprint available 3	1 Download Model
	NCV8114ASN300T1G onsemi	1	Operating Input Voltage Range: 1.7 V to 5.5 V; Low Dropout: 135 mV Typical at 300 mA; High PSRR 75dB at 1kHz; Thermal Shutdown and Current Limit Protections; Very Low Quiescent Current of Typ. 50 µ?A; Available in TSOP5 Package; +/- 1% typical Vout Accuracy	SOT23 (5-Pin)	NCV8114ASN300T1G	3D model available Symbol and footprint available 3	1 Download Model
	NTMFS08N2D5C onsemi	1	Max rDS(on) = 2.7 mΩ at VGS = 10 V, ID = 68 A; Max rDS(on) = 8 mΩ at VGS = 6 V, ID = 34 A; 50% Lower Qrr than Other MOSFET Suppliers; Lowers Switching Noise/EMI; MSL1 Robust Package Design; 100% UIL Tested; RoHS Compliant; Shielded Gate MOSFET Technology	Other	NTMFS08N2D5C	3D model available Symbol and footprint available 3	1 Download Model
	MC74HC1G08DFT2G-Q onsemi	1	High Noise Immunity; Low Power Dissipation: ICC = 1mA (Max) at TA = 25°C; Symmetrical Output Impedance (IOH = IOL = 2mA); High Speed: tPD = 7ns (Typ) at VCC = 5V; Balanced Propagation Delays (tpLH = tpHL); Chip Complexity: FET = 44; Equivalent Gate = 11; Pb-Free Packages are Available; Designed for 2.0 V to 6.0 V Vcc Operation Wide Operating Vcc Range	SOT23 (5-Pin)	MC74HC1G08DFT2G-Q	3D model available Symbol and footprint available 3	1 Download Model
	LM2904N onsemi	1	Last Shipments - Operational Amplifier, Single Supply, Dual	Dual-In-Line Packages	LM2904N	3D model available Symbol and footprint available 3	1 Download Model
	MMSZ5256ET1G onsemi	1	500 mW Rating on FR−4 or FR−5 Board; Wide Zener Reverse Voltage Range − 2.4 V to 110 V; Package Designed for Optimal Automated Board Assembly; Small Package Size for High Density Applications; ESD Rating of Class 3 (>16 KV) per Human Body Model; Pb-Free Packages are Available; AEC-Q101 Qualified and PPAP Capable; SZ Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements	Small Outline Diode	MMSZ5256ET1G	3D model available Symbol and footprint available 3	1 Download Model
	ESD7241N2T5G onsemi	1	SZESD7241MXWT5G Wettable Flank Package; SZ Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP CapableSZ Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable; Ultra-Low Capacitance: < 1.0pF Max; Low Leakage: < 0.5uA; IEC61000-4-2 (ESD): Level 4 ±28kV Contact; IEC61000-4-4 (EFT): 40A - 5/50ns; IEC61000-4-5 (Lightning): 1A - 8/20us; These Devices are Pb	Other	ESD7241N2T5G	3D model available Symbol and footprint available 3	1 Download Model
	SZ1SMA5927BT3G onsemi	1	Ideal Replacement for MELF Packages Mechanical Characteristics:; Case: Void-free, transfer-molded plastic; Finish: All external surfaces are corrosion resistant with readily solderable leads; Maximum Case Temperature for Soldering Purposes: 260 °C for 10 seconds; POLARITY: Cathode indicated by molded polarity notch or cathode band.; FLAMMABILITY RATING: UL94 V–0; Pb-Free Packages are Available; AEC-Q101 Qualified and PPAP Capable; SZ Prefix for Automotive and Other Applications Requiring Unique Site and Con	Diodes Moulded	SZ1SMA5927BT3G	3D model available Symbol and footprint available 3	1 Download Model
	FDH055N15A onsemi	1	High Power and Current Handling Capability; Fast Switching Speed; High Performance Trench Technology for Extremely Low RDS(on) ; Low Gate Charge, QG = 92nC ( Typ.); RoHS Compliant; RDS(on) = 4.8mΩ ( Typ.)@ VGS = 10V, ID = 120A	Transistor Outline, Vertical	FDH055N15A	3D model not available Symbol and footprint available 2	1 Download Model
	FDS86106 onsemi	1	High power and current handling capability in a widely used surface mount package; Max rDS(on) = 171 mΩ at VGS = 6 V, ID/ = 2.7 A; 100% UIL Tested; Max rDS(on)= 105 mΩ at VGS = 10 V, ID = 3.4 A; RoHS Compliant; High performance trench technology for extremely low rDS(on)	Small Outline Packages	FDS86106	3D model available Symbol and footprint available 3	1 Download Model
	NRVBSS34FA onsemi	1	3 A, 40 V Surface Mount Schottky Barrier RectifiersDiode 40 V 3A Surface Mount SOD-123FL	Other	NRVBSS34FA	3D model available Symbol and footprint available 3	1 Download Model
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