Showing 25 of 116445 results
| Image | Part Number | D.S | Description | Package Category | Prices / Stock | Model | Action |
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| Image | Part Number | D.S | Description | Package Category | Prices / Stock | Model | Action |
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MC100LVEL05DG
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1 | High Bandwidth Output Transitions; The 100 Series Contains Temperature Compensation; ESD Protection: >4 KV HBM, >200 V MM; 340ps Propagation Delay; PECL Mode Operating Range: VCC= 3.0 V to 3.8 V with VEE= 0 V; NECL Mode Operating Range: VCC= 0 V with VEE= -3.0 V to -3.8 V; Internal Input Pulldown Resistors; Q Output will Default LOW with All Inputs Open or at VEE; Meets or Exceeds JEDEC Spec EIA/JESD78 IC Latchup Test; Moisture Sensitivity Level 1 For Additional Information, see Application Note AND8003/D; | Small Outline Packages | MC100LVEL05DG |
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MC74ACT14DTR2G
onsemi
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1 | Outputs Source/Sink 24 mA; Schmitt Trigger Inputs; ACT14 Has TTL Compatible Inputs; Pb-Free Packages are Available | Small Outline Packages | MC74ACT14DTR2G |
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NCD57090CDWR2G
onsemi
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1 | High Peak Output Current (+6.5 A/-6.5 A); Short Propagation Delays with Accurate Matching; High Transient & Electromagnetic Immunity; 5 KVrms On-Chip Galvanic Isolation; Wide Bias Voltage Ranges and Input Voltage Range; Active Miller Clamp or Negative Gate Voltage or Split Outputs | Small Outline Packages | NCD57090CDWR2G |
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NCP186AMX390TAG
onsemi
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1 | 1.8 V to 5.5 V Operating Input Voltage Range; Several Fixed Output Voltage Options and others available upon request in range from 1.2 V to 3.9 V; Low Quiescent Current of Typ. 90 µA; Very Low Dropout: 100 mV Typ. at Iout = 1 A (3.0V version); High 75 dB at 1 kHz PSRR; Internal Soft-Start; ±1.0% Accuracy in -40 to 85degC temperature range; Thermal Shutdown and Current Limit Protections; Stable with Small 1 µF Ceramic Capacitors | Other | NCP186AMX390TAG |
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SZ1SMB5937BT3G
onsemi
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1 | Zener Voltage Range - 3.3 V to 200 V; ESD Rating of Class 3 (>16 KV) per Human Body Model; Flat Handling Surface for Accurate Placement; Package Design for Top Side or Bottom Circuit Board Mounting Mechanical Characteristics:; CASE: Void-free, transfer-molded plastic; FINISH: All external surfaces are corrosion resistant with readily solderable leads; MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES: 260°C for 10 seconds; LEADS: Modified L-Bend providing more contact area to bond pads; POLARITY: Cathode indi | Diodes Moulded | SZ1SMB5937BT3G |
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BAW56
onsemi
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1 | Obsolete - 70 V Dual Common Anode Switching Diode | SOT23 (3-Pin) | BAW56 |
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FODM352
onsemi
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1 | Current Transfer Ratio Min 1000% at IF = 1 mA, VCE = 2 V, TA = 25°C; Safety and Regulatory Approvals: − UL1577, 3750 VACRMS for 1 min − DIN EN/IEC60747−5−5, 565 V Peak Working Insulation Voltage; Applicable to Infrared Reflow, 260°C | Small Outline Packages | FODM352 |
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NTHL020N120SC1
onsemi
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1 | 1200V; Max RDS(on) = 28mΩ at Vgs = 20V, Id = 60A; High Speed Switching and Low Capacitance; 100% UIL Tested | Other | NTHL020N120SC1 |
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MBRM120LT3G
onsemi
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1 | NRVB Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; Low Profile - Maximum Height of 1.1 mm; Small Footprint - Footprint Area of 8.45 mm2; Low VF Provides Higher Efficiency and Extends Battery Life; Supplied in 12 mm Tape and Reel; Low Thermal Resistance with Direct Thermal Path of Die on Exposed Cathode Heat Sink Mechanical Characteristics:; Powermite is JEDEC Registered as DO-216AA; Case: Molded Epoxy; Powermite is JEDEC Registered as DO-216AA; Weight: 6 | Other | MBRM120LT3G |
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HGTG30N60C3D
onsemi
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1 | Last Shipments - 600V, SMPS IGBT | Transistor Outline, Vertical | HGTG30N60C3D |
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MMUN2137LT1G
onsemi
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1 | Simplifies Circuit Design; Reduces Board Space; Reduces Component Count; S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AECQ101 Qualified and PPAP Capable; These Devices are PbFree, Halogen Free/BFR Free and are RoHS Compliant | SOT23 (3-Pin) | MMUN2137LT1G |
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1N4738A
onsemi
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1 | Zener Single Diode, 8.2 V, 1 W, DO-41 (DO-204AL), 2 Pins, 200 °C, Through Hole | Diodes, Axial Diameter Horizontal Mounting | 1N4738A |
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MMBT5179
onsemi
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1 | RF Bipolar Transistors NPN RF Transistor | SOT23 (3-Pin) | MMBT5179 |
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2SC5227A-4-TB-E
onsemi
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1 | Low-noise : NF = 1.0 dB typ (f = 1 GHz); High gain : Forward Transfer Gain = 12 dB typ (f = 1 GHz); High cut-off frequency : fT = 7 GHz typ | SOT23 (3-Pin) | 2SC5227A-4-TB-E |
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FOD814
onsemi
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1 | FOD817A: 80-160%; FOD817B: 130-260%; DIN EN/IEC60747-5-5; FOD814A: 50-150%; FOD817C: 200-400%; FOD817D: 300-600%; FOD817: 50-600%; UL1577, 5,000 VACRMS for 1 Minute; Minimum BVCEO of 70 V Guaranteed; AC Input Response (FOD814); FOD814: 20-300%; Safety and Regulatory Approvals; Current Transfer Ratio in Selected Groups: | Dual-In-Line Packages | FOD814 |
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UC3845BVD1R2G
onsemi
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1 | High Current Totem Pole Output; Current Mode Operation to 500 kHz Output Switching Frequency; Latching PWM for Cycle-By-Cycle Current Limiting; Automatic Feed Forward Compensation; Internally Trimmed Reference with Undervoltage Lockout; Undervoltage Lockout with Hysteresis; Oscillator Frequency Guaranteed at 250 kHz; Low Startup and Operating Current; Trimmed Oscillator for Precise Frequency Control; Output Deadtime Adjustable from 50% to 70%; Pb-Free Packages are Available | Small Outline Packages | UC3845BVD1R2G |
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BS170-D75Z
onsemi
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1 | N-Channel 60 V 500mA (Ta) 830mW (Ta) Through Hole TO-92-3 | Other | BS170-D75Z |
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MBRB20100CTT4G
onsemi
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1 | Package Designed for Power Surface Mount Applications; Shipped 50 units per plastic tube; Epoxy Meets UL94, VO at 1/8"; Marking: B20100; Weight: 1.7 grams (approximately); Center-Tap Configuration; Similar in Size to Industry Standard TO-220 Package Mechanical Characteristics:; Guaranteed Reverse Avalanche; Lead and Mounting Surface Temperature for Soldering Purposes: 260 C Max. for 10 Seconds; Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable; Low Forward Voltage; | Other | MBRB20100CTT4G |
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NTMFS5H600NLT1G
onsemi
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1 | Low RDS(on); Marketing leading FOM; RoHS Compliant | Other | NTMFS5H600NLT1G |
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MC79L12ABDR2G
onsemi
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1 | No External Components Required; Internal Short Circuit Current Limiting; Internal Thermal Overload Protection; Low Cost; Complementary Positive Regulators Offered (MC78L00 Series); Pb-Free Packages are Available | Small Outline Packages | MC79L12ABDR2G |
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MBR150G
onsemi
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1 | Obsolete - 1.0 A, 50 V, Schottky Barrier Rectifier | Diodes, Axial Diameter Horizontal Mounting | MBR150G |
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MUN2111T1G
onsemi
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1 | Simplifies Circuit Design; Reduces Board Space; Reduces Component Count; S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable; These Devices are PbFree, Halogen Free/BFR Free and are RoHS Compliant | SOT23 (3-Pin) | MUN2111T1G |
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NCP600SNADJT1G
onsemi
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1 | UltraLow Dropout Voltage of 150 mV at 150 mA; Adjustable Output by External Resistors from 5.0 V down to 1.250 V; Fast Enable Turnon Time of 15 µs; Wide Supply Voltage Range Operating Range.; Excellent Line and Load Regulation; High Accuracy 2% Output Voltage Tolerance over All OperatingConditions; Typical Noise Voltage of 50 Vrms without a Bypass Capacitor; PbFree Package is Available; Fixed Voltage Options - 1.5V, 1.8V, 2.8V, 3.0V, 3.3V, 5.0V | SOT23 (5-Pin) | NCP600SNADJT1G |
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NVMFS5C442NLAFT1G
onsemi
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1 | Small Footprint (5x6 mm); Low RDS(on); AEC−Q101 Qualified and PPAP Capable; NVMFS5C442NLWF − Wettable Flank Option; Low QG and Capacitance; RoHS Compliant | Other | NVMFS5C442NLAFT1G |
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FDB029N06
onsemi
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1 | Low Gate Charge; High Performance Trench Technology for Extremely Low RDS(on) ; RoHS compliant; RDS(on) = 2.4mΩ ( Typ.) @ VGS = 10V, ID = 75A; High Power and Current Handling Capability ; Fast Switching Speed | Other | FDB029N06 |
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