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Image	Part Number	D.S	Description	Package Category	Prices / Stock	Model	Action
	MC33172DG onsemi	1	Obsolete - Operational Amplifier, Single Supply 3.0 V to 44 V, Low Power, Dual	Small Outline Packages	MC33172DG	3D model available Symbol and footprint available 3	1 Download Model
	BAS21 onsemi	1	Obsolete - 250 V Switching Diode High Voltage	SOT23 (3-Pin)	BAS21	3D model available Symbol and footprint available 3	1 Download Model
	RHRP3060 onsemi	1	600V Reverse Voltage and High Reliability; Avalanche Energy Rated; RoHS compliant; Max Forward Voltage, VF = 2.1V (@ TC = 25°C); Hyperfast recovery Trr = 45ns (@IF= 30A)	Transistor Outline, Vertical	RHRP3060	3D model available Symbol and footprint available 3	1 Download Model
	MC74VHCT541ADTRG onsemi	1	High Speed: tPD = 5.4ns (Typ) at VCC = 5V; Low Noise: VOLP = 1.6V (Max); Balanced Propagation Delays; TTL-Compatible Inputs: VIL = 0.8V; VIH = 2.0V; ESD Performance: HBM > 2000V; Machine Model > 200V; Designed for 4.5V to 5.5V Operating Range; Latchup Performance Exceeds 300mA; Chip Complexity: 134 FETs or 33.5 Equivalent Gates; Low Power Dissipation: ICC = 4µA (Max) at TA = 25 C; Pin and Function Compatible with Other Standard Logic Families; Power Down Protection Provided on Inputs and Outputs; Pb-Free Pa	Small Outline Packages	MC74VHCT541ADTRG	3D model available Symbol and footprint available 3	1 Download Model
	MC100EPT25DTG onsemi	1	Q Output will default LOW with inputs open or at GND; 24mA TTL outputs; Maximum Frequency > 275 MHz Typical; 1.1ns Typical Propagation Delay; Operating Range: VCC = 3.0 V to 3.6 V; VEE = -5.5 V to -3.0 V; GND = 0 V; VBB Output; Open Input Default State; Safety Clamp on Inputs; Pb-Free Packages are Available	Small Outline Packages	MC100EPT25DTG	3D model available Symbol and footprint available 3	1 Download Model
	MC33035DWR2G onsemi	1	Can Efficiently Control Brush DC Motors with External MOSFET H-Bridge; Fully Accessible Err Amplifier for Closed Loop Servo Applications; 10 to 30 V Operation; 6.25 V Reference Capable of Supplying Sensor Power; Selectable 60° /300° or 120° /240° Sensor Phasings; Cycle-By-Cycle Current Limiting; Undervoltage Lockout; Internal Thermal Shutdown; Pinned-Out Current Sense Reference; High Current Drivers Can Control External 3-Phase MOSFET Bridge	Small Outline Packages	MC33035DWR2G	3D model available Symbol and footprint available 3	1 Download Model
	BC847BPDW1T1G onsemi	1	These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant; S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AECQ101 Qualified and PPAP Capable	SOT23 (6-Pin)	BC847BPDW1T1G	3D model available Symbol and footprint available 3	1 Download Model
	MC74VHC1GT00DBVT1G onsemi	1	High Speed: tPD = 3.1ns (Typ) at VCC = 5V; CMOS-Compatible Outputs: VOH > 0.8VCC ; VOL < 0.1VCC @Load; Power Down Protection Provided on Inputs and Outputs; Pin and Function Compatible with Other Standard Logic Families; Low Power Dissipation: ICC = 2m A (Max) at TA = 25°C; Balanced Propagation Delays; TTL-Compatible Inputs: VIL = 0.8V; VIH = 2.0V; Pb-Free Packages are Available; Designed for 2.0 V to 5.5 V VCC Operation	SOT23 (5-Pin)	MC74VHC1GT00DBVT1G	3D model available Symbol and footprint available 3	1 Download Model
	FOD8163V onsemi	1	8 mm Creepage and Clearance Distance, and 0.4 mm Insulation Distance to Achieve Reliable and High Voltage Insulation; Specifications Guaranteed Over 3 V to 5.5 V Supply Voltage and -40°C to 100°C Extended Industrial Temperature Range; High Noise Immunity Characterized by Common Mode Transient Immunity (CMTI) – 20 kV/µs Minimum CMTI; High-Speed, 10 Mbit/s Data Rate (NRZ); Safety and Regulatory Approvals – UL1577, 5,000 VACRMS for 1 Minute – DIN-EN/IEC60747-5-5, 1,140 V Peak Working Insulation Voltage	Small Outline Packages	FOD8163V	3D model available Symbol and footprint available 3	1 Download Model
	FFSP0865A onsemi	1	Max Junction Temperature 175 °C; High Surge Current Capacity; Positive Temperature Coefficient; No Reverse Recovery / No Forward Recovery	Transistor Outline, Vertical	FFSP0865A	3D model available Symbol and footprint available 3	1 Download Model
	NB3H5150-01MNTXG onsemi	1	Flexible Input Reference − 25 MHz Crystal, Oscillator, Single−Ended or Differential; Four Independent User−Programmable Clock Frequencies from 25 MHz to 250 MHz; Up to Eight LVCMOS Single Ended outputs or up to Four Differential LVPECL Outputs or any combination of LVCMOS and LVPECL; Independently Configurable Outputs; Flexible Input/Core and Output Power Supply Combinations:; VDD (Core) = 3.3 V ±5% or 2.5 V ±5%; VDDOn (Outputs) = 3.3 V ±5% or 2.5 V ±5% or 1.8 V ±5% (LVCMOS Only); Independent Power Supply p	Quad Flat No-Lead	NB3H5150-01MNTXG	3D model available Symbol and footprint available 3	1 Download Model
	NXH006P120M3F2PTHG onsemi	1	Excellent FOM [ = Rdson * Eoss ]; 15V to 18V Gate Drive; 6 mohm / 1200 V M3S SiC MOSFET Half−Bridge; These Devices are Pb−Free, Halide Free and are RoHS Compliant	Other	NXH006P120M3F2PTHG	3D model available Symbol and footprint available 3	1 Download Model
	SZMM5Z3V9T1G onsemi	1	ESD Rating of Class 3 (>16kV) Human Body Model; Small Body Outline Dimensions: 0.047in x 0.032in (1.20mm x 0.80mm); Steady State Power Rating of 500mW; UL94, VO Rating; SZ Prefix for AEC-Q101 and Other Applications Requiring Unique Site and Control Change Requirements; Standard Zener Breakdown Voltage Range: 5% Tolerance; Pb-Free and RoHS Compliant	Small Outline Diode Flat Lead	SZMM5Z3V9T1G	3D model available Symbol and footprint available 3	1 Download Model
	NCV2001SN2T1G onsemi	1	0.9 V Guaranteed Operation; Rail-to-Rail Common Mode Input Voltage Range; Rail-to-Rail Output Drive Capability; No Output Phase Reversal for Over-Driven Input Signals; 0.5 mV Trimmed Input Offset Typical; 10 pA Input Bias Current; 1.4 MHz Unity Gain Bandwidth at +/- 2.5 V, 1.1 MHz at +/- 0.5 V	SOT23 (5-Pin)	NCV2001SN2T1G	3D model available Symbol and footprint available 3	1 Download Model
	FFSB0465A onsemi	1	Max Junction Temperature 175 °C; High Surge Current Capacity; Positive Temperature Coefficient; No Reverse Recovery / No Forward Recovery	Other	FFSB0465A	3D model not available Symbol and footprint available 2	1 Download Model
	NC7SZ02P5X onsemi	1	Power Down High-Impedance Inputs/Outputs ; Proprietary Noise/EMI Reduction Circuitry ; Space-Saving SOT23 and SC70 Packages; Ultra-Small MicroPak™ Packages ; High Output Drive: ±24mA at 3V VCC ; Broad VCC Operating Range: 1.65V to 5.5V ; Matches Performance of LCX Operated at 3.3V VCC ; Over-Voltage Tolerance Inputs Facilitate 5V to 3V Translation	SOT23 (5-Pin)	NC7SZ02P5X	3D model available Symbol and footprint available 3	1 Download Model
	MC7808CTG onsemi	1	Output Current in Excess of 1.0 A; No External Components Required; Internal Thermal Overload Protection; Internal Short Circuit Current Limiting; Output Transistor Safe-Area Compensation; Output Voltage Offered in 2% and 4% Tolerance; Pb-Free Packages are Available	Transistor Outline, Vertical	MC7808CTG	3D model available Symbol and footprint available 3	1 Download Model
	DF005M onsemi	1	Lifetime - 1.5A Bridge Rectifier	Dual-In-Line Packages	DF005M	3D model available Symbol and footprint available 3	1 Download Model
	FDS9926A onsemi	1	RDS(ON) = 30 mΩ @ VGS = 4.5 V; Low gate charge; RDS(ON) = 43 mΩ @ VGS = 2.5 V; Optimized for use in battery protection circuits; ±10 VGSS allows for wide operating voltage range; 6.5 A, 20 V	Small Outline Packages	FDS9926A	3D model available Symbol and footprint available 3	1 Download Model
	NTP5D0N15MC onsemi	1	Shielded Gate MOSFET Technology; Max RDS(on) = 5.0 mΩ at VGS = 10 V, ID = 97 A; 50% Lower Qrr than other MOSFET Suppliers; Lowers Switching Noise/EMI; 100% UIL Tested; These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant	Transistor Outline, Vertical	NTP5D0N15MC	3D model available Symbol and footprint available 3	1 Download Model
	MC74VHCT74ADR2G onsemi	1	High Speed: fmax = 60MHz (Typ) at VCC = 5V; Low Power Dissipation: ICC = 2 A (Max) at TA = 25°C; Balanced Propagation Delays; Latchup Performance Exceeds 300mA; Low Noise: VOLP = 0.8V (Max); Designed for 4.5V to 5.5V Operating Range; ESD Performance: HBM > 2000V; Machine Model > 200V; Pin and Function Compatible with Other Standard Logic Families; Power Down Protection Provided on Inputs; Chip Complexity: 128 FETs or 32 Equivalent Gates; Pb-Free Packages are Available	Small Outline Packages	MC74VHCT74ADR2G	3D model available Symbol and footprint available 3	1 Download Model
	NCP451AFCT2G onsemi	1	0.75 V - 5.5 V operating range; 12 m RDS(ON) at 3.6 V; DC current up to 3 A; Output Auto-discharge	BGA	NCP451AFCT2G	3D model available Symbol and footprint available 3	1 Download Model
	LM2903N onsemi	1	Obsolete - Comparator, Dual, Low Offset Voltage	Dual-In-Line Packages	LM2903N	3D model available Symbol and footprint available 3	1 Download Model
	FDS6679AZ onsemi	1	Max rDS(on) = 14.8mΩ at VGS = -4.5V, ID = -11A; HBM ESD protection level of 6kV typical (note 3); High power and current handing capability; Extended VGS range (-25V) for battery applications; High performance trench technology for extremely lowrDS(on); High power and current handing capability; Max rDS(on) = 9.3mΩat VGS = -10V, ID = -13A	Small Outline Packages	FDS6679AZ	3D model available Symbol and footprint available 3	1 Download Model
	NTD4858NT4G onsemi	1	Obsolete - Single N-Channel Power MOSFET 25V, 65A, 7.5mΩ	Other	NTD4858NT4G	3D model not available Symbol and footprint available 2	1 Download Model
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