Showing 25 of 116445 results
| Image | Part Number | D.S | Description | Package Category | Prices / Stock | Model | Action |
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| Image | Part Number | D.S | Description | Package Category | Prices / Stock | Model | Action |
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FDMA510PZ
onsemi
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1 | Max rDS(on) = 90mΩ at VGS = –1.5V, ID = –2.0A ; RoHS Compliant ; Max rDS(on) = 50mΩ at VGS = –1.8V, ID = –5.5A ; Low profile - 0.8mm maximum - in the new package MicroFET2X2 mm ; HBM ESD protection level > 3KV typical (Note 3) ; Max rDS(on) = 30mΩ at VGS = –4.5V, ID = –7.8A ; Free from halogenated compounds and antimony oxides ; Max rDS(on) = 37mΩ at VGS = –2.5V, ID = –6.6A | Other | FDMA510PZ |
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NCV51510MWTAG
onsemi
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1 | Last Shipments - 5 kVrms Isolated Dual Channel 4.5/9 A Automotive Gate Driver | Small Outline No-lead | NCV51510MWTAG |
3
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MBRA2H100T3G
onsemi
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1 | Compact Package with J-Bend Leads Ideal for Automated Handling; Highly Stable Oxide Passivated Junction; Guard-Ring for Overvoltage Protection; Low Forward Voltage Drop; This is a Pb-Free Device Mechanical Characteristics:; Case: Molded Epoxy; Epoxy Meets UL 94 V-0 @ 0.125 in; Weight: 70 mg (approximately); Cathode Polarity Band; Lead and Mounting Surface Temperature for Soldering Purposes: 260C Max. for 10 Seconds; Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable; | Diodes Moulded | MBRA2H100T3G |
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FCPF1300N80ZYD
onsemi
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1 | 100% Avalanche Tested; ESD Improved Capability; RoHS Compliant; Low Eoss (Typ. 1.57 uJ @ 400V); RDS(on) = 1.05 Ω(Typ.); Low Effective Output Capacitance (Typ. Coss(eff.) = 48.7 pF); Ultra Low Gate Charge (Typ. Qg = 16.2 nC) | Other | FCPF1300N80ZYD |
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FZT790A
onsemi
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1 | FZT790A, Bipolar Transistor, PNP -3 A -40 V HFE:150 100 MHz High Current Gain, 3-Pin SOT-223 | SOT223 (3-Pin) | FZT790A |
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NVLUS4C12NTAG
onsemi
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1 | UDFN Package with Exposed Drain Pads; Low Profile UDFN 2.0x2.0x0.55 mm ; Ultra Low RDS(on); Optimized Gate Charge; Low Capacitance; AEC−Q101 Qualified and PPAP Capable; RoHS Compliant | Other | NVLUS4C12NTAG |
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MUN5235DW1T1G
onsemi
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1 | Dual NPN Transistors; SC-88 (SOT-363) Package; NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101; These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant | SOT23 (6-Pin) | MUN5235DW1T1G |
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LMV301SQ3T2G
onsemi
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1 | Single Supply Operation (or #177;VS/2); VS from 1.8 V to 5 V | SOT23 (5-Pin) | LMV301SQ3T2G |
3
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FJL4315OTU
onsemi
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1 | Bipolar (BJT) Transistor NPN 250 V 17 A 30MHz 150 W Through Hole TO-264-3 | Other | FJL4315OTU |
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UJ3D1210K2
onsemi
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1 | Operating temperature: 175?C (max); Easy paralleling; Extremely fast switching not dependent on temperature; No reverse or forward recovery; Enhanced surge current capability, MPS structure; Excellent thermal performance, Ag sintered; 100% UIS tested | Transistor Outline, Vertical | UJ3D1210K2 |
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NVTFS5C454NLTAG
onsemi
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1 | Small Footprint (3x3 mm); Low On-Resistance; Low Capacitance; NVTFS5C454NLWF − Wettable Flanks Product; AEC−Q101 Qualified and PPAP Capable; RoHS Compliant | Other | NVTFS5C454NLTAG |
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NVMFS3D0P04M8LT1G
onsemi
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1 | Small Footprint (5x6 mm); Low RDS(on); Low QG and Capacitance; SO8FL package, Industry Standard; AEC−Q101 Qualified and PPAP Capable; These Devices are Pb−Free and are RoHS Compliant | Other | NVMFS3D0P04M8LT1G |
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NTS10100MFST3G
onsemi
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1 | Obsolete - Trench Schottky Rectifier Very Low Leakage, 10A 120V, Part | Other | NTS10100MFST3G |
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NC7SZU04AP5X
onsemi
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1 | Matches Performance of LCX Operated at 3.3V VCC ; Broad VCC Operating Range: 1.65V to 5.5V ; Unbuffered for Crystal Oscillator and Analog Applications ; Balanced Output Drive: ±16mA at 4.5V VCC ; Low Quiescent Power: ICC<2µA, VCC=5.5V, TA=25°C ; Ultra-Small MicroPak™ Packages ; Space-Saving SOT23 and SC70 Packages | SOT23 (5-Pin) | NC7SZU04AP5X |
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NTH4L023N065M3S
onsemi
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1 | TO-247-4L Package with Kelvin source configuration; Excellent FOM [ = Rdson * Eoss ]; Ultra Low Gate Charge (QG(tot) = 69 nC); High Speed Switching with Low Capacitance (Coss = 153 pF); 15V to 18V Gate Drive; Typ. RDS(on) = 23 mΩ at Vgs = 18V; 100% Avalanche Tested; Halide Free and RoHS Compliant | Other | NTH4L023N065M3S |
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MJF45H11G
onsemi
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1 | Low Collector-Emitter Saturation Voltage--VCE(sat) = 1.0 V (Max) @ 8.0 A; Fast Switching Speeds; Complementary Pairs Simplifies Designs; Pb-Free Packages are Available | Transistor Outline, Vertical | MJF45H11G |
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DTC143ZM3T5G
onsemi
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1 | Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50 V 100 mA 260 mW Surface Mount SOT-723 | Other | DTC143ZM3T5G |
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GBU4G
onsemi
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1 | Surge Overload Rating: 150 A peak; UL certified, UL #E258596; Ideal for Printed Circuit Bboard; Glass-Passivated Junction; Reliable Low-Cost Construction Utilizing Molded Plastic Technique | Other | GBU4G |
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BCW65CLT1G
onsemi
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1 | High Current: IC = -1.0 Amp; The SOT-23 Package can be soldered using wave or reflow.; NPN Complement is BCP68; SOT-23 package ensures level mounting, resulting in improved thermal conduction, and allows visual inspection of soldered joints. The formed leads absorb thermal stress during soldering, eliminating the possibility of damage to the die.; Available in 12 mm Tape and Reel Use BCP69T1 to order the 7 inch/1000 unit reel. Use BCP69T3 to order the 13 inch/4000 unit reel.; Pb-Free Packages are Available | SOT23 (3-Pin) | BCW65CLT1G |
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TLV431BSNT1G
onsemi
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1 | A = 1.0% tolerance Vref; B = 0.5% tolerance Vref; C = 0.2% tolerance Vref; Programmable Output Voltage Range of 1.24 V to 16 V; Voltage Reference Tolerance +/-1.0%; Sharp Low Current Turn-On Characteristic; Low Dynamic Output Impedance of 0.20 W from 100 mA to 20 mA; Micro Miniature TSOP-5 and TO-92 Packages; Pb-Free Package is Available | SOT23 (5-Pin) | TLV431BSNT1G |
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NCN26000XMNTXG
onsemi
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1 | Supports IEEE802.3 CSMA/CD Collision Detection: - PLCA mode will default to CSMA/CD collision detection, if needed; Enhanced Noise Immunity Mode: - ENI extends the noise immunity to values well above the IEEE T1S standard - Allows the NCN26000 to withstand worst-case DPI and BCI immunity tests - Significantly improves the network reach when enabled, almost 2X better than competition - Unique to onsemi's 10BASE-T1S devices; Lowest Line Pin Capacitance: - Best-in-class line pin capacitance allows for the high | Other | NCN26000XMNTXG |
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NCV33274ADG
onsemi
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1 | • Input Offset Voltage Trimmed to 100 V (Typ)• Low Input Bias Current: 300 nA• Low Input Offset Current: 3.0 nA• High Input Resistance: 16 M• Low Noise: 18 nV/ √ Hz @ 1.0 kHz• High Gain Bandwidth Product: 24 MHz @ 100 kHz• High Slew Rate: 10 V/s• Power Bandwidth: 160 kHz | Small Outline Packages | NCV33274ADG |
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M1MA152WKT1G
onsemi
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1 | Fast trr, < 3.0 ns; Available in 8 mm Tape and Reel Use M1MA151/2WKT1 to order the 7 inch/3000 unit reel. Use M1MA151/2WKT3 to order the 13 inch/10,000 unit reel.; Low CD, < 2.0 pF; Pb-Free Packages are Available; S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AECQ101 Qualified and PPAP Capable | SOT23 (3-Pin) | M1MA152WKT1G |
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FDP18N50
onsemi
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1 | Low gate charge ( Typ. 45nC); Low Crss ( Typ. 25pF); RDS(on) = 265mΩ ( Max.)@ VGS = 10V, ID = 9A; 100% avalanche tested | Transistor Outline, Vertical | FDP18N50 |
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SZMM5Z10VT1G
onsemi
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1 | Standard Zener Breakdown Voltage Range: 2.4V to 75V; Steady State Power Rating of 500mW; Small Body Outline Dimensions: 0.047in x 0.032in (1.20mm x 0.80mm); Low Body Height: 0.028in (0.7mm); ESD Rating of Class 3 (>16kV) Human Body Model; Epoxy Meets UL94, VO; Cathode Indicated by Polarity Band; Lead Finish: 100% Matte Sn (Tin); Qualified Maximum Reflow Temperature: 260C; Device Meets MSL 1 Requirements; Pb-Free Packages are Available; AEC-Q101 Qualified and PPAP Capable; SZ Prefix for Automotive and Other | Small Outline Diode Flat Lead | SZMM5Z10VT1G |
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