Showing 25 of 116445 results
| Image | Part Number | D.S | Description | Package Category | Prices / Stock | Model | Action |
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| Image | Part Number | D.S | Description | Package Category | Prices / Stock | Model | Action |
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NVMJD012N06CL
onsemi
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1 | Dual N?Channel Power MOSFET 60V, 42A, 11.9m? | Other | NVMJD012N06CL |
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NUP3115UPMUTAG
onsemi
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1 | Low Capacitance Data Lines (0.8pF Typical between I/O and GND); Protects up to Three Data Lines Plus a Vcc Pin; UDFN Package, 1.6 x 1.6mm; Low Profile of 0.50mm for Ultra Slim Design; ESD Rating: IEC6100042: Level, Contact (8kV); Vcc Pin = 15 V Protection; D1, D2, and D3 Pins = 6.4 V Minimum Protection; This is a Pb-Free Device | Small Outline No-lead | NUP3115UPMUTAG |
3
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FOD852S
onsemi
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1 | DIN EN/IEC60747-5-5; UL1577, 5,000 VACRMS for 1 Minute; Safety and Regulatory Approvals; High Current Transfer Ratio: 1000% Minimum | Other | FOD852S |
3
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Download Model |
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FDD6N50FTM
onsemi
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1 | 100% avalanche tested; RoHS compliant; Low Crss ( Typ. 6.3pF); Low gate charge ( Typ. 15nC); RDS(on) = 950 mΩ ( Typ.)@ VGS = 10 V, ID = 2.75 A; Improved dv/dt capability | Other | FDD6N50FTM |
2
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Download Model |
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NCV4279A50D2R2G
onsemi
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1 | Obsolete - LDO Regulator, 150 mA | Small Outline Packages | NCV4279A50D2R2G |
3
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NC7WZU04AP6X
onsemi
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1 | TinyLogic UHS Dual Unbuffered Inverter | Other | NC7WZU04AP6X |
3
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H11F1M
onsemi
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1 | As a remote variable resistor: ; ≥ 100GΩ I/O isolation resistanceAs an analog switch: ; No charge injection or latch-up; ≤ 100Ω to ≥ 300MΩ; ≤ 15pF shunt capacitance; UL recognized (File #E90700); 60 Vpk-pk signal capability; Extremely low offset voltage | Dual-In-Line Packages | H11F1M |
3
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Download Model |
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FDP26N40
onsemi
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1 | Last Shipments - N-Channel PowerTrench MOSFET 250V, 50A, 47mΩ | Transistor Outline, Vertical | FDP26N40 |
3
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Download Model |
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FDMS86163P
onsemi
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1 | Very low RDS(on) mid voltage P-channel silicon technology optimised for low Qg; Max rDS(on) = 22 mΩ at VGS = -10 V, ID = -7.9 A ; This product is optimised for fast switching applications as well as load switch applications ; 100% UIL tested ; RoHS Compliant ; Max rDS(on) = 30 mΩ at VGS = -6 V, ID = -5.9 A | Other | FDMS86163P |
3
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Download Model |
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MOC3053SM
onsemi
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1 | Excellent IFT Stability—IR Emitting Diode Has Low Degradation; 600 V Peak Blocking Voltage; Safety and Regulatory Approvals; UL1577, 4,170 VACRMS for 1 Minute; DIN EN/IEC60747-5-5 | Small Outline Packages | MOC3053SM |
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MOC213M
onsemi
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1 | Safety and Regulatory Approvals:; MOC211M, MOC212M, MOC213M, MOC216M,MOC217M; MOC216M, MOC217M; Low LED Input Current Required for Easier Logic Interfacing; Minimum BVCEO of 70 V Guaranteed; MOC205M, MOC206M, MOC207M; UL1577, 2,500 VACRMS for 1 Minute; DIN-EN/IEC60747-5-5, 565 V Peak Working Insulation Voltage; Closely Matched Current Transfer Ratios; Minimum BVCEO of 30 V Guaranteed; Convenient Plastic SOIC-8 Surface Mountable Package Style, with 0.050" Lead Spacing | Small Outline Packages | MOC213M |
3
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Download Model |
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NTST30100CTG
onsemi
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1 | Obsolete - Schottky Power Rectifier, Dual, 30 A, 100 V | Transistor Outline, Vertical | NTST30100CTG |
3
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Download Model |
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S210FA
onsemi
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1 | MSL 1 per J-STD-020; UL Flammability 94V-0 Classification; High Surge Current Capability; Low Power Loss, High Efficiency; Guard Ring for Overvoltage Protection; Green Molding Compound; NRVB Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable; These Devices are Pb−Free and are RoHS Compliant | Small Outline Diode Flat Lead | S210FA |
3
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FOD8316R2V
onsemi
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1 | Wide supply voltage range from 15V to 30V; 2.5A peak output current driving capability for most 1200V/150A IGBT; User configurable: inverting, non-inverting, auto-reset, auto-shutdown; Under voltage lockout protection; 3.3V/5V, CMOS/TTL compatible inputs; High Speed; 1,414V (peak) working voltage rating; Use of P-Channel MOSFETs at output stage enables output voltage swing close to the supply rail (rail-to-rail output); RDS(ON) of 1 Ω (typ.) offers lower power dissipation; 8mm creepage and clearance distanc | Small Outline Packages | FOD8316R2V |
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NCP4304ADR2G
onsemi
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1 | Precise True Secondary Zero Current Detection with Adjustable Threshold; Automatic Parasitic Inductance Compensation; Typically 40 ns Turn off Delay from Current Sense Input to Driver; Zero Current Detection Pin Capability up to 200 V; Optional Ultrafast Trigger Input; Disable Input; Adjustable Minimum ON Time and Minimum OFF Time; 5 A/2.5 A Peak Current Sink/Source Drive Capability; Operating Voltage Range up to 30V | Small Outline Packages | NCP4304ADR2G |
3
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MUR620CTG
onsemi
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1 | 175 C Operating Junction Temperature; Ultrafast 35 Nanosecond Recovery Time; Popular TO-220 Package Mechanical Characteristics:; Lead Temperature for Soldering Purposes: 260 C Max. for 10 Seconds; Case: Epoxy, Molded; Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable; Weight: 1.9 grams (approximately); Marking: U620 | Transistor Outline, Vertical | MUR620CTG |
3
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M74VHC1GU04DFT2G
onsemi
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1 | High Speed: tPD = 2.5ns (Typ) at VCC = 5V; Power Down Protection Provided on Inputs; Low Power Dissipation: ICC = 1µA (Max) at TA = 25°C; Balanced Propagation Delays; Pin and Function Compatible with Other Standard Logic Families; Chip Complexity: FETs = 105; Designed for 2.0 V to 5.5 V VCC Operation; Pb-Free Packages are Available | SOT23 (5-Pin) | M74VHC1GU04DFT2G |
3
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NTHL1000N170M1
onsemi
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1 | 18V to 20V Gate Drive; New 1700V M1 technology: 28mohm RDS(ON) with low EON and EOFF losses; 100% Avalanche Tested | Transistor Outline, Vertical | NTHL1000N170M1 |
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MC74HC240ADTR2G
onsemi
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1 | Outputs Directly Interface to CMOS, NMOS, and TTL; High Noise Immunity Characteristic of CMOS Devices; In Compliance with the Requirements Defined by JEDEC Standard No. 7A; Operating Voltage Range: 2 to 6 V; Output Drive Capability: 15 LSTTL Loads; Chip Complexity: 120 FETs or 30 Equivalent Gates; Low Input Current: 1 mA; Pb-Free Packages are Available* | Small Outline Packages | MC74HC240ADTR2G |
3
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SZMMSZ5236BT1G
onsemi
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1 | 500 mW Rating on FR-4 or FR-5 Board; ESD Rating of Class 3 (exceeding 16 kV) per the Human Body Model Mechanical Characteristics:; Package Designed for Optimal Automated Board Assembly; Small Package Size for High Density Applications; Wide Zener Reverse Voltage Range - 2.4 V to 110 V; General Purpose, Medium Current; CASE: Void-free, transfer-molded, thermosetting plastic case; FINISH: Corrosion resistant finish, easily solderable; MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES: 260?C for 10 Seconds; POLA | Small Outline Diode | SZMMSZ5236BT1G |
3
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NVMJST3D3N04C
onsemi
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1 | Single N-Channel Power MOSFET 40V, 102A, 3.3 m? on Top Cool Package | Small Outline Packages | NVMJST3D3N04C |
3
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NVMFS4C303NWFET1G
onsemi
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1 | Small Footprint (5x6 mm); Low RDS(on); Low QG and Capacitance; NVMFS4C03NWF − Wettable Flanks Option; AEC−Q101 Qualified and PPAP Capable; RoHS Compliant | Other | NVMFS4C303NWFET1G |
3
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Download Model |
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FDS6690AS
onsemi
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1 | Obsolete - N-Channel PowerTrench MOSFET 30V, 9A, 11.5mΩ | Small Outline Packages | FDS6690AS |
3
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SG5841JSZ
onsemi
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1 | Green-Mode PWM Controller Low Startup Current : 14µA Low Operating Current: 4mA Programmable PWM Frequency with Hopping Peak-Current-Mode Control Cycle-by-Cycle Current Limiting Synchronized Slope Compensation Leading-Edge Blanking (LEB) Constant Output Power Limit Totem Pole Output with Soft Driving VDD Over-Voltage Clamping Programmable Over-Temperat | Small Outline Packages | SG5841JSZ |
3
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NLA9535CDTR2G-Q
onsemi
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1 | VDD Operating Range: 1.65 V to 5.5 V; SDA Sink Capability: 30 mA; No Glitch on Powerup; Internal Poweron Reset; 64 Programmable Slave Addresses using Three Address Pins; 16 I/O Pins which Default to 16 Inputs; 5.5 V Tolerant I/Os; Polarity Inversion Register; Active LOW Interrupt Output; Low Standby Current; Noise Filter on SCL/SDA Inputs | Small Outline Packages | NLA9535CDTR2G-Q |
3
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