Showing 25 of 116445 results
| Image | Part Number | D.S | Description | Package Category | Prices / Stock | Model | Action |
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| Image | Part Number | D.S | Description | Package Category | Prices / Stock | Model | Action |
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MOC3073SVM
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1 | Excellent IFT Stability—IR Emitting Diode Has Low Degradation; 800 V Peak Blocking Voltage; Safety and Regulatory Approvals– UL1577, 4,170 VACRMS for 1 Minute– DIN EN/IEC60747-5-5 (pending approval) | Small Outline Packages | MOC3073SVM |
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2N7002ET7G
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1 | Small ; Low RDS(on); Trench Technology; RoHS Compliant | SOT23 (3-Pin) | 2N7002ET7G |
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SZMMBZ27VALT1G
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1 | SOT-23 Package Allows Either Two Separate Unidirectional Configurations or a Single Bidirectional Configuration; Working Peak Reverse Voltage Range - 3 V to 26 V; Standard Zener Breakdown Voltage Range - 5.6 V to 33 V; Peak Power - 24 or 40 Watts @ 1.0 ms (Unidirectional); ESD Rating of Class N (exceeding 16 kV) per the Human Body Model; Maximum Clamping Voltage @ Peak Pulse Current; Low Leakage < 5.0 µ A; Flammability Rating UL 94V-O Mechanical Characteristics:; CASE: Void-free, transfer-molded, thermosett | SOT23 (3-Pin) | SZMMBZ27VALT1G |
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MURA220T3G
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1 | Small Compact Surface Mountable Package with J-Bend Leads; Rectangular Package for Automated Handling; High Temperature Glass Passivated Junction; Low Forward Voltage Drop (0.77 Volts Max @ 2.0 A, TJ = 150°C) Mechanical Characteristics:; Case: Epoxy, Molded; Weight: 70 mg (approximately); Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable; Lead and Mounting Surface Temperature for Soldering Purposes: 260°C Max. for 10 Seconds; Shipped in 12 mm Tape and Reel, 5000 uni | Diodes Moulded | MURA220T3G |
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FDB52N20TM
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1 | RDS(on) = 49mΩ ( Max.)@ VGS = 10V, ID = 26A; Low Crss ( Typ. 66pF); 100% avalanche tested; Low gate charge ( Typ. 49nC) | Other | FDB52N20TM |
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FAN73611MX
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1 | Common-Mode dv/dt Noise-Canceling Circuit; Floating Channel for Bootstrap Operation to +600V; Under-Voltage Lockout for VDD and VBS; 8-Lead Small Outline Package (SOP); 3.3V and 5V Input Logic Compatible; 250mA/500mA Sourcing/Sinking Current Driving Capability; Output In Phase with Input Signal | Small Outline Packages | FAN73611MX |
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M74VHC1G132DTT1G
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1 | Designed for 2.0 V to 5.5 V Vcc Operation Wide Operating Vcc Range; High Speed: tPD = 3.6ns (Typ) at VCC = 5V; Low Power Dissipation: ICC = 1µA (Max) at TA = 25°C; Power Down Protection Provided on Inputs; Balanced Propagation Delays; Pin and Function Compatible with Other Standard Logic Families; Chip Complexity: FETs = <100; Pb-Free Packages are Available | SOT23 (5-Pin) | M74VHC1G132DTT1G |
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2N5195G
onsemi
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1 | Pb-Free Packages are Available | Transistor Outline, Vertical | 2N5195G |
3
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BD179
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1 | Obsolete - 3.0 A, 80 V Medium Power NPN Bipolar Power Transistor | Transistor Outline, Vertical | BD179 |
3
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NL17SZ125DTT1G
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1 | 24 mA Balanced Output Sink and Source Capability; Extremely High Speed: tPD 2.6 ns (typical) at VCC = 5 V; Over Voltage Tolerant Inputs and Outputs; LVTTL Compatible - Interface Capability With 5 V TTL Logic with VCC = 3 V; Designed for 1.65 V to 5.5 V VCC Operation; LVCMOS Compatible; Near Zero Static Supply Current Substantially Reduces System Power Requirements; 3-State OE Input is Active-Low; Replacement for NC7SZ125; Chip Complexity = 36 FETS | SOT23 (5-Pin) | NL17SZ125DTT1G |
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MC74ACT14DR2G
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1 | Outputs Source/Sink 24 mA; Schmitt Trigger Inputs; ACT14 Has TTL Compatible Inputs; Pb-Free Packages are Available | Small Outline Packages | MC74ACT14DR2G |
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BZX85C3V9
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1 | Obsolete - Zener Diode | Diodes, Axial Diameter Horizontal Mounting | BZX85C3V9 |
3
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FDC610PZ
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1 | Max rDS(on) = 75mΩ at VGS = -4.5V, ID = -3.7A; Low gate charge (17nC typical).; High performance trench technology for extremely low rDS(on). ; SuperSOT™-6 package: small footprint (72% smaller than standard SO-8) low profile (1mm thick).; Max rDS(on) = 42mΩ at VGS = -10V, ID = -4.9A; RoHS compliant | SOT23 (6-Pin) | FDC610PZ |
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FDFS2P106A
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1 | RDS(on) = 110 mΩ@ VGS = -10 V ; RDS(on) = 140 mΩ @ VGS = -4.5 V ; VF < 0.62 V @ 2 A ; -3.0A, -60 V ; VF < 0.53 V @ 1 A ; Schottky and MOSFET incorporated into singlepower surface mount SO-8 package; Electrically independent Schottky and MOSFETpinout for design flexibility ; VF < 0.45 V @ 1 A (TJ = 125°C) | Small Outline Packages | FDFS2P106A |
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NTTFS4C05NTAG
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1 | Low RDS(on) to Minimize Conduction Losses; Low Capacitance to Minimize Driver Losses; Optimized Gate Charge to Minimize Switching Losses; RoHS Compliant | Other | NTTFS4C05NTAG |
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MJD42CT4G
onsemi
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1 | Straight Lead Version in Plastic Sleeves (-1 Suffix); Electrically Similar to Popular TIP41 and TIP42 Series; Lead Formed Version in 16 mm Tape and Reel (T4 Suffix); Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix); NJV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable; These are PbFree Packages | Other | MJD42CT4G |
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FFD10UP20S
onsemi
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1 | RoHS compliant; Ultrafast recovery, Trr = 20.8ns (@IF= 10A); Max Forward Voltage, VF = 1.15V (@ TC = 25°C); Avalanche Energy Rated; Reverse Voltage : VRRM = 200V | Other | FFD10UP20S |
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NLV74HC4067ADTR2G
onsemi
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1 | Fast Switching and Propagation Speeds; High ON/OFF Output Voltage Ratio; Low Crosstalk Between Switches; Diode Protection on All Inputs/Outputs; Wide PowerSupply Voltage Range (VCC-GND) = 2.0 to 6.0 V; Analog Input Voltage Range (VCC-GND) = 0 to 6.0 V; Improved Linearity and Lower ON Resistance over Input Voltage; Low Noise; These are PbFree Devices | Small Outline Packages | NLV74HC4067ADTR2G |
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SB3231-E1
onsemi
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1 | Obsolete - Preconfigured DSP System for Hearing Aids, with up to 4 WDRC channels | Other | SB3231-E1 |
3
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DFB2510
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1 | Ideal for Printed Circuit Board; Glass-Passivated Junction; High Case Dielectric Strength: 2500 VRMS; Reliable Low-Cost Construction; Plastic Material has Underwriters Laboratory Flammability Classification 94V-0; UL Certificate # E258596; Surge Overload Rating: 350 A Peak; Isolated Voltage from Case to Lead: > 2500 V | Transistor Outline, Vertical | DFB2510 |
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NFAM3812SCBUT
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1 | Intelligent Power Module (IPM) Inverter, 1200 V, 50 A | Other | NFAM3812SCBUT |
3
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BAS16P2T5G
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1 | Extremely small SOD-923 package | Small Outline Diode Flat Lead | BAS16P2T5G |
3
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NCD57090ADWR2G
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1 | High Peak Output Current (+6.5 A/-6.5 A); Short Propagation Delays with Accurate Matching; High Transient & Electromagnetic Immunity; 5 KVrms On-Chip Galvanic Isolation; Wide Bias Voltage Ranges and Input Voltage Range; Active Miller Clamp or Negative Gate Voltage or Split Outputs | Small Outline Packages | NCD57090ADWR2G |
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MC74HCT138ADTR2G
onsemi
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1 | Output Drive Capability: 10 LSTTL Loads; TTL/NMOS Compatible Input Levels; Outputs Directly Interface to CMOS, NMOS, and TTL; Operating Voltage Range: 4.5 to 5.5 V; In Compliance with the Requirements Defined by JEDEC Standard No. 7A; Chip Complexity: 122 FETs or 30.5 Equivalent Gates; Low Input Current: 1.0 µA; Pb-Free Packages are Available* | Small Outline Packages | MC74HCT138ADTR2G |
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SBC856BDW1T1G
onsemi
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1 | Device Marking: BC856BDW1T1 = 3B BC857BDW1T1 = 3F BC857CDW1T1 = 3G BC858BDW1T1 = 3K BC858CDW1T1 = 3L; Pb-Free Packages are Available; S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable | SOT23 (6-Pin) | SBC856BDW1T1G |
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