Showing 25 of 116445 results
| Image | Part Number | D.S | Description | Package Category | Prices / Stock | Model | Action |
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| Image | Part Number | D.S | Description | Package Category | Prices / Stock | Model | Action |
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FDB1D7N10CL7
onsemi
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1 | Low Qrr; Soft recovery body diode; Low RDS(on); Small Footprint (5 x 6 mm); RoHS compliant | Other | FDB1D7N10CL7 |
3
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FOD3180TSV
onsemi
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1 | 30 ns typ. pulse width distortion; Under voltage lockout protection (UVLO) withhysteresis; Guaranteed operating temperature range of -40°C to+100°C; 250 kHz maximum switching speed; 2 A minimum peak output current; Minimum clearance distance of 7.0 mm; C-UL, UL and VDE* safety agency approvals pending; 5000Vrms, 1 minute isolation; Wide VCCoperating range: 10 V to 20 V; 10 kV/m minimum common mode rejection; Minimum creepage distance of 7.0 mm; High-speed response: 200 ns max propagation delayover temperatu | Small Outline Packages | FOD3180TSV |
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74AC138SC
onsemi
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1 | ICC reduced by 50%; Active LOW mutually exclusive outputs; Demultiplexing capability; ACT138 has TTL-compatible inputs; Multiple input enable for easy expansion; Outputs source/sink 24 mA | Small Outline Packages | 74AC138SC |
3
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MPSA42RL1G
onsemi
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1 | Bipolar (BJT) Transistor NPN 300 V 500 mA 50MHz 625 mW Through Hole TO-92 (TO-226) -55°C ~ 150°C | Other | MPSA42RL1G |
3
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NDT2955
onsemi
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1 | High density cell design for extremely low RDS(ON); High power and current handling capability in a widelyused surface mount package.; RDS(ON) = 300mΩ @ VGS = -10V; -2.5A, -60V; RDS(ON) = 500mΩ @ VGS = -4.5V | SOT223 (3-Pin) | NDT2955 |
3
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MC33502PG
onsemi
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1 | Obsolete - Op-Amp, 1.0 V Rail-to-Rail | Dual-In-Line Packages | MC33502PG |
3
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NCV4276CDTADJT5G
onsemi
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1 | Thermal Overload; Output Current up to 400 mA; Fault Protections:; 3.3 V, 5.0 V, and Adjustable Voltage Version (from 2.5 V to 20 V) ±2% Output Voltage; Inhibit Input; +45 V Peak Transient Voltage; 500 mV (max) Dropout Voltage (5.0 V Output); AEC-Q100 Qualified; -42 V Reverse Voltage; Short Circuit | Other | NCV4276CDTADJT5G |
3
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MC74ACT00DG
onsemi
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1 | Operating Voltage Range: 2 to 6 V AC00; 4.5 to 5.5 ACT00; Output Drive Capability: +/-24 mA; Low Input Current: 1 µA; High Noise Immunity Characteristic of CMOS Devices; In Compliance With the JEDEC Standard No. 7A requirements; Pb-Free Packages are Available. | Small Outline Packages | MC74ACT00DG |
2
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CAV24C512WE-GT3
onsemi
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1 | Automotive Temperature Grade 1 (-40°C to +125°C); Supports Standard, Fast and Fast-Plus I2C Protocol; 2.5 V to 5.5 V Supply Voltage Range ; 128-Byte Page Write Buffer; Hardware Write Protection for Entire Memory; Schmitt Triggers and Noise Suppression Filters on I2C Bus Inputs (SCL and SDA); Low Power CMOS Technology; 1,000,000 Program/Erase Cycles; 100 Year Data Retention; 8-lead SOIC and TSSOP Packages; This Device is Pb-Free, Halogen Free/BFR Free and RoHS Compliant | Small Outline Packages | CAV24C512WE-GT3 |
3
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NCP1399AADR2G
onsemi
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1 | Current Mode Control Scheme; High−Frequency Operation from 20 kHz up to 750 kHz; Automatic Dead−time with Maximum Dead−time Clamp | Small Outline Packages | NCP1399AADR2G |
3
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NCV5171EDR2G
onsemi
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1 | For Automotive and other applications requiring site and control changes; Automotive versions of the CS5171 and CS5173; Built-in Overcurrent Protection; High Frequency Allows for Small Components; Minimum External Components; Frequency Foldback Reduces Component Stress During an Overcurrent Condition; Thermal Shutdown with Hysteresis; Easy External Synchronization; Integrated Power Switch: 1.5A Guarnateed; Pin-to-Pin Compatible with LT1372/1373; These are Pb-free device; Wide Input Range: 2.7V to 30V | Small Outline Packages | NCV5171EDR2G |
3
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NVMFD5C462NT1G
onsemi
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1 | Low RS (on) resistance; High current capability; 100% avalanche tested; AEC-Q101 Qualified | Other | NVMFD5C462NT1G |
3
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FAN65008B
onsemi
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1 | Wide Input Voltage Range: 4.5 V to 65 V; Switching Frequency: 100 kHz to 1 MHz; 0.6 V Reference Voltage with 0.67% Accuracy; Selectable CCM PWM Mode or PFM Mode for Light Loads; Over Current Protection, Thermal Shutdown, Over Voltage Protection, Under Voltage Protection and Short−circuit Protection; Dual LDOs for Single Supply Operation and to Reduce Power Loss; External Compensation for Wide Operation Range; Adjustable Soft−Start & Pre−Bias Startup; Enable Function with Adjustable Input Voltage Under−Volta | Other | FAN65008B |
3
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NCP716BSN500T1G
onsemi
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1 | Wide Input Voltage Range: Up to 24V; Ultra-Low Quiescent current: 3.2uA Typical; Fixed Output Voltage Options: from 1.5V to 5.0V; Power Supply Rejection Ratio: 55dB @ 100kHz; Package: TSOP-5 / SOT-23-5 | SOT23 (5-Pin) | NCP716BSN500T1G |
3
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Download Model |
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NGTB30N120LWG
onsemi
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1 | Obsolete - IGBT, 1350V 30A with Monolithic Free Wheeling Diode. | Transistor Outline, Vertical | NGTB30N120LWG |
3
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MURS360BT3G
onsemi
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1 | Marking: B36B; Highly Stable Oxide Passivated Junction; Weight: 95 mg (approximately); Polarity: Polarity Band Indicates Cathode Lead; Small Compact Surface Mountable Package with J-Bend Leads; Shipped in 16 mm Tape and Reel, 2500 units per reel; Case: Epoxy, Molded; Rectangular Package for Automated Handling; Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable; Pb-Free Package; Device Meets MSL 1 Requirements; SURS8 and SURS Prefixes for Automotive and Other Applicat | Diodes Moulded | MURS360BT3G |
3
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NSVT807CMTWFTBG
onsemi
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1 | Wettable Flank Package | Other | NSVT807CMTWFTBG |
3
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NRVBSS26NT3G
onsemi
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1 | Compact Package with J–Bend Leads Ideal for Automated Handling; Highly Stable Oxide Passivated Junction; Guardring for Over–Voltage Protection; Low Forward Voltage Drop Mechanical Characteristics:; Case: Molded Epoxy; Epoxy Meets UL94, VO at 1/8 inch; Weight: 95 mg (approximately); Cathode Polarity Band; Lead and Mounting Surface Temperature for Soldering Purposes: 260°C Max. for 10 Seconds; Available in 12 mm Tape, 2500 Units per 13 inch Reel, Add "T3" Suffix to Part Number; Finish: All External Surfaces C | Diodes Moulded | NRVBSS26NT3G |
3
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MC1496P
onsemi
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1 | Obsolete - Balanced Modulator and Demodulator | Dual-In-Line Packages | MC1496P |
3
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Download Model |
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CAT8900C250TBGT3
onsemi
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1 | Obsolete - Precision Analog Voltage Reference | SOT23 (3-Pin) | CAT8900C250TBGT3 |
3
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Download Model |
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ECH8697R-TL-W
onsemi
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1 | 2.5 V drive; Common-Drain Type; ESD Diode-Protected Gate; RoHS compliance; Low On-Resistance; Built-in Gate Protection Resistor | SOT23 (8-Pin) | ECH8697R-TL-W |
3
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NVTFS9D6P04M8LTAG
onsemi
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1 | Low RDS(on); NVTFWS9D6P04M8L − Wettable Flanks Product; Low Capacitance; AEC−Q101 Qualified and PPAP Capable; These Devices are Pb−Free, Halogen Free/BFR−Free and are RoHS Compliant; Small Footprint (3.3 x 3.3mm) | Other | NVTFS9D6P04M8LTAG |
3
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NTMFS0D6N04XMT1G
onsemi
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1 | Latest 40V Standard Gate Level Power MOSFET Technology; Lower On-Resistance; Lower Gate Charge; Good Body Diode Softness | Other | NTMFS0D6N04XMT1G |
3
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NCV2200AMUTBG
onsemi
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1 | Operating Voltage of 0.85 V to 6.0 V; Rail-to-rail Input/Output Performance; Low Supply Current of 10 µA; No Phase Inversion/Glitchless transitioning in or out of Tri-State Mode; Complementary or Open Drain Output Configuration; Available with the Enable Function | Other | NCV2200AMUTBG |
3
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NTD4904N-35G
onsemi
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1 | Obsolete - Single N-Channel Power MOSFET 30V, 79A, 3.7mΩ | Transistor Outline, Vertical | NTD4904N-35G |
3
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