Showing 25 of 116445 results
| Image | Part Number | D.S | Description | Package Category | Prices / Stock | Model | Action |
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| Image | Part Number | D.S | Description | Package Category | Prices / Stock | Model | Action |
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MM74HCT244WMX
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1 | 3-STATE outputs for connection to system buses; Low quiescent current: 80 µA; High output drive current: 6 mA (min); TTL input compatible; Typical propagation delay: 14 ns | Small Outline Packages | MM74HCT244WMX |
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NDF05N50ZG
onsemi
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1 | Obsolete - Power MOSFET 500V 5A 1.5 Ohm Single N-Channel TO-220FP | Transistor Outline, Vertical | NDF05N50ZG |
3
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NTTFS012N10MDTAG
onsemi
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1 | Shielded Gate MOSFET Technology ; Max rDS(on) = 14.4 mΩ at VGS = 10 V, ID = 15 A ; Max rDS(on) = 21 mΩ at VGS = 6 V, ID = 7.5 A ; 50% lower Qrr than other MOSFET suppliers ; Lowers switching noise/EMI; 100% UIL tested ; RoHS Compliant ; Very Low RDS*Qoss | Other | NTTFS012N10MDTAG |
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NE5534DR2G
onsemi
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1 | Obsolete - Operational Amplifier, Low Noise, Single | Small Outline Packages | NE5534DR2G |
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PACDN042Y3R
onsemi
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1 | Two, three, four, five, or six transient voltage suppressors; Compact SMT package saves board space and facilitates layout in space critical applications; In-system ESD protection to ±20 kV contact discharge, per the IEC 61000-4-2 international standard | SOT23 (3-Pin) | PACDN042Y3R |
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SZMMSZ5263BT1G
onsemi
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1 | 500 mW Rating on FR-4 or FR-5 Board; ESD Rating of Class 3 (exceeding 16 kV) per the Human Body Model Mechanical Characteristics:; Package Designed for Optimal Automated Board Assembly; Small Package Size for High Density Applications; Wide Zener Reverse Voltage Range - 2.4 V to 110 V; General Purpose, Medium Current; CASE: Void-free, transfer-molded, thermosetting plastic case; FINISH: Corrosion resistant finish, easily solderable; MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES: 260?C for 10 Seconds; POLA | Small Outline Diode | SZMMSZ5263BT1G |
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ESD5Z3.3T5G
onsemi
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1 | Low Clamping Voltage; Small Body Outline Dimensions: 0.047″ x 0.032″ (1.20 mm x 0.80 mm); Low Leakage; Response Time is Typically < 1 ns; IEC61000−4−2 Level 4 ESD Protection and IEC61000−4−4 Level 4 EFT Protection; SZ Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable; Peak Power up to 240 Watts @ 8 x 20 s Pulse; Low Body Height: 0.028″ (0.7 mm); ESD Rating of Class 3 (> 16 kV) per Human Body Model; These Devices are Pb−Fre | Small Outline Diode Flat Lead | ESD5Z3.3T5G |
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NCV47822PAAJR2G
onsemi
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1 | Adjustable Current Limits: up to 350 mA; Diagnostic Features: Short to Battery and Open Load detection in OFF State Internal Components for OFF State Diagnostics Open Collector Flag Output; Output Current per Channel: up to 250 mA; Protection: Current Limitation, Thermal Shutdown, Reverse Input Voltage; Two Independent Enable Inputs (3.3 V Logic Compatible) | Small Outline Packages | NCV47822PAAJR2G |
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FOD4116SV
onsemi
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1 | High static dv/dt (10,000V/µs); High trigger sensitivity ; High blocking voltage ; Lead free assembly; 600V (FOD410, FOD4116) ; 800V (FOD4108, FOD4118) ; Zero-voltage crossing; 1.3mA (FOD4116, FOD4118) ; 2mA (FOD410, FOD4108) ; 300mA on-state current; UL, VDE, CSA approved | Small Outline Packages | FOD4116SV |
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NL3V2T244MUTAG
onsemi
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1 | Product Preview - Non-Inverting Level Translator | Other | NL3V2T244MUTAG |
3
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NCP4306DADZZDASNT1G
onsemi
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1 | Precise True Secondary Zero Current Detection; Typically 15 ns Turn off Delay from Current Sense Input to Driver; Zero Current Detection Pin Capability up to 200 V; Optional Ultrafast (10.5ns) Trigger Input; Disable Input; Adjustable Minimum ON Time and Minimum OFF Time; dV/dt detection; 7 A Sink, 2 A Source Drive capability; Automatic Light Load Disable Mode; 3.5V UVLO and Operation Voltage range up to 35V | Small Outline Packages | NCP4306DADZZDASNT1G |
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LMV321SQ3T2G
onsemi
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1 | Operation from 2.7 V to 5.0 V Single-Sided Power Supply; No Output Crossover Distortion; Industrial temperature Range: -40C to +85C or Automotive -40C to +125C; Rail-to-Rail Output; Low Quiescent Current; No Output Phase-Reversal from Overdriven Input; NCV prefix for Automotive Qualified Version | SOT23 (5-Pin) | LMV321SQ3T2G |
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NCV51152CADR2G
onsemi
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1 | 4.5-A Peak Source, 9-A Peak Sink Output Current; 36 ns Propagation Delay with 5 ns Max Delay Matching; 3-V to 20-V Input Supply Voltage; 200V/ns dV/dt Immunity; 3.75 kVRMS Isolation for 1 Minute (per UL1577 Requirements); Separated Outputs (NCV51152xA) or UVLO Referenced to GND2 (NCV51152xB); UVLO options 6-V and 8-V for MOSFET, 12-V and 17-V for SiC | Small Outline Packages | NCV51152CADR2G |
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MM74HC14MTCX
onsemi
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1 | Typical hysteresis voltage: 0.9V at VCC = 4.5V; Low quiescent current: 20 µA maximum (74HC Series); Wide power supply range: 2-6V; Low input current: 1 µA maximum; Fanout of 10 LS-TTL loads; Typical propagation delay: 13 ns | Small Outline Packages | MM74HC14MTCX |
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NSVT30010MXV6T1G
onsemi
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1 | Current Gain Matching to 10%; Base-Emitter Voltage Matched to 2 mV; Drop-In Replacement for Standard Device; These are Pb-Free Devices; S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable | SO Transistor Flat Lead | NSVT30010MXV6T1G |
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MC74HC244ADTR2G
onsemi
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1 | Output Drive Capability: 15 LSTTL Loads; Operating Voltage Range: 2 to 6 V; Outputs Directly Interface to CMOS, NMOS, and TTL; Low Input Current: 1 mA; High Noise Immunity Characteristic of CMOS Devices; In Compliance with the Requirements Defined by JEDEC Standard No. 7A; Chip Complexity: 136 FETs or 34 Equivalent Gates; Pb-Free Packages are Available* | Small Outline Packages | MC74HC244ADTR2G |
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FGY4L75T120SWD
onsemi
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1 | Maximum Junction Temperature TJ = 175C; Positive Temperature Coefficient; High Current Capability; Smooth and Optimized Switching; Low Switching Loss; RoHS Compliant | Other | FGY4L75T120SWD |
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FQD19N10LTM
onsemi
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1 | 15.6A, 100V, RDS(on) = 100mΩ(Max.) @VGS = 10 V, ID = 7.8A; Low gate charge ( Typ. 14nC); 100% avalanche tested; Low Crss ( Typ. 35pF) | Other | FQD19N10LTM |
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NCV8114ASN280T1G
onsemi
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1 | Operating Input Voltage Range: 1.7 V to 5.5 V; Low Dropout: 135 mV Typical at 300 mA; High PSRR 75dB at 1kHz; Thermal Shutdown and Current Limit Protections; Very Low Quiescent Current of Typ. 50 µ?A; Available in TSOP5 Package; +/- 1% typical Vout Accuracy | SOT23 (5-Pin) | NCV8114ASN280T1G |
3
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BD138
onsemi
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1 | Last Shipments - 1.5 A, 60 V PNP Bipolar Power Junctions Transistor | Transistor Outline, Vertical | BD138 |
3
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HCPL2630SD
onsemi
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1 | Obsolete - 8-Pin DIP Dual-Channel High Speed 10 MBit/s Logic Gate Output Optocoupler (Not recommend for new design. The new equivalent part number is HCPL26xxM) | Small Outline Packages | HCPL2630SD |
3
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FAM65CR51AXZ1
onsemi
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1 | Integrated SIP or DIP Boost Converter Stage Power Module for On−board Charger (OBC) in EV−PHEV; 5 kV/1 sec Electrically Isolated Substrate for Easy Assembly; Compact Design for Low Total Module Resistance; Module Serialization for Full Traceability; Lead Free, RoHS and UL94V−0 Compliant; Automotive Qualified per AEC Q101 and AQG324 Guidelines | Other | FAM65CR51AXZ1 |
3
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MUR1520
onsemi
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1 | Power Rectifier, Ultra-Fast Recovery, Switch-mode, 15 A, 200 V | Transistor Outline, Vertical | MUR1520 |
3
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NTBL048N60S5H
onsemi
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1 | 650 V @ TJ = 150°C; Leadless thin SMD package; Kelvin Source Configuration; Low Effective Output Capacitance (Typ. Coss(tr.) = 1173 pF); Ultra Low Gate Charge (Typ. Qg = 92.8 nC); Typ. RDS(on) = 38.4 mΩ; 100% Avalanche Tested; These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant; Moisture Sensitivity Level 1 guarantee; Internal Gate Resistance: 0.66 Ω | Other | NTBL048N60S5H |
3
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NVT2016N065M3S
onsemi
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1 | N-Channel 650 V 85A (Tc) 333W (Tj) Surface Mount T2PAK -55°C ~ 175°C | Other | NVT2016N065M3S |
2
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Download Model |