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| Image | Part Number | D.S | Description | Package Category | Prices / Stock | Model | Action |
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| Image | Part Number | D.S | Description | Package Category | Prices / Stock | Model | Action |
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NVRGS055N06CLT1G
onsemi
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1 | RoHS Compliant; Trench Technology; Low RDS(ON); Small Footprint Industry Standard Surface Mount SOT−23 Package; AECQ101 Qualified and PPAP Capable | SOT23 (3-Pin) | NVRGS055N06CLT1G |
3
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Download Model |
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MMUN2140LT1G
onsemi
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1 | Simplifies Circuit Design; Reduces Board Space; Reduces Component Count; S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable; These Devices are PbFree, Halogen Free/BFR Free and are RoHS Compliant | SOT23 (3-Pin) | MMUN2140LT1G |
3
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Download Model |
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SRV05-4MR6T1G
onsemi
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1 | ON SEMICONDUCTOR - SRV05-4MR6T1G - ESD Protection Device, 17.5 V, TSOP, 6 Pins, 300 W | SOT23 (6-Pin) | SRV05-4MR6T1G |
3
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Download Model |
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74LCX112MTC
onsemi
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1 | Obsolete - Low Voltage Triple 3-Input AND Gate with 5V Tolerant Inputs | Small Outline Packages | 74LCX112MTC |
3
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Download Model |
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GBU8A
onsemi
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1 | Surge Overload Rating: 200 A peak; Reliable Low-Cost Construction Utilizing Molded Plastic Technique; UL certified, UL #E258596; Glass-Passivated Junction; Ideal for Printed Circuit Bboard | Transistor Outline, Vertical | GBU8A |
3
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Download Model |
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MC74LVX138DR2G
onsemi
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1 | Pin and Function Compatible with Other Standard Logic Families; Power Down Protection Provided on Inputs; Low Noise: VOLP = 0.5V (Max); Low Power Dissipation: ICC = 4µA (Max) at TA = 25 C; Latchup Performance Exceeds 300mA; ESD Performance: HBM > 2000V; Machine Model > 200V PIN; High Speed: tPD = 5.5ns (Typ) at VCC = 3.3V; Balanced Propagation Delays; Pb-Free Packages are Available* | Small Outline Packages | MC74LVX138DR2G |
3
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Download Model |
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ESD9101P2T5G
onsemi
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1 | Low Capacitance (0.5pF Max, I/O to GND); Low ESD Clamping Voltage | Small Outline Diode Flat Lead | ESD9101P2T5G |
3
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Download Model |
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FDH047AN08A0
onsemi
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1 | Low Miller Charge; Low Qrr Body Diode; RDS(on) = 4.0mΩ (Typ.) @ VGS = 10V, ID = 80A; QG(tot) = 92nC (Typ.) @ VGS = 10V; UIS Capability (Single Pulse and Repetitive Pulse) | Transistor Outline, Vertical | FDH047AN08A0 |
3
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Download Model |
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MM3Z18VC
onsemi
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1 | Wide Zener Voltage Range Selection, 2.4V to 75V; VZ Tolerance Selection of ±5% (C Series); Very Small and Thin SMD package; Matte Tin(Sn) finish, Pb Free | Small Outline Diode Flat Lead | MM3Z18VC |
3
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Download Model |
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NVATS5A112PLZT4G
onsemi
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1 | Obsolete - P-Channel Power MOSFET, -60V, -80A, 13mΩ | Other | NVATS5A112PLZT4G |
3
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Download Model |
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FFSP1665A
onsemi
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1 | Max Junction Temperature 175 °C; High Surge Current Capacity; Positive Temperature Coefficient; No Reverse Recovery / No Forward Recovery | Transistor Outline, Vertical | FFSP1665A |
3
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Download Model |
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FDMS039N08B
onsemi
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1 | 100% UIL Tested; Low Reverse Recovery Charge, Qrr = 80nC; RDS(on) = 3.2 mΩ (Typ.)@ VGS = 10 V, ID = 50 A; RoHS Compliant; Low FOM RDS(on) *QG; Fast Switching Speed; Enables highly efficiency in synchronous rectification; Soft reverse recovery Body Diode | Other | FDMS039N08B |
3
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Download Model |
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NLV14081BDR2G
onsemi
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1 | Capable of Driving Two Low-power TTL Loads or One Low-power Schottky TTL Load Over the Rated Temperature Range.; Pin-for-Pin Replacements for Corresponding CD4000 Series B Suffix Devices; All Outputs Buffered; Supply Voltage Range = 3.0 Vdc to 18 Vdc; Double Diode Protection on All Inputs Except: Triple Diode Protection on MC14011B and MC14081B; Pb-Free Packages are Available* | Small Outline Packages | NLV14081BDR2G |
3
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Download Model |
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BAV99LT1G
onsemi
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1 | Pb-Free Packages are Available; S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AECQ101 Qualified and PPAP Capable | SOT23 (3-Pin) | BAV99LT1G |
3
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Download Model |
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NSVDTA113EM3T5G
onsemi
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1 | Simplifies Circuit Design; Reduces Board Space; Reduces Component Count; S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable; These Devices are PbFree, Halogen Free/BFR Free and are RoHS Compliant | Other | NSVDTA113EM3T5G |
2
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Download Model |
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NCV33274ADTBR2G
onsemi
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1 | Power Bandwidth: 160 kHz; Unity Gain Stable: w/Capacitance Loads to 500 pF; ESD Diodes Provide Added Protection to the Inputs; Input Offset Voltage Trimmed to 100 µV (Typ); Low Noise: 18 nV/ (sq. root Hz) @ 1.0 kHz; Low Input Bias Current: 300 nA; Single or Split Supply Operation: +3.0 V to +36 V or +/-1.5 V to +/-18 V; Excellent Frequency Stability; Large Output Voltage Swing: +14.1 V/ -14.6 V; Low Total Harmonic Distortion: 0.003%; Low Input Offset Current: 3.0 nA; High Slew Rate: 10 V/µs; High Input Resi | Small Outline Packages | NCV33274ADTBR2G |
3
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Download Model |
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NVMTSC1D3N08M7TXG
onsemi
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1 | Small Footprint (8x8 mm); Low RDS(on); Low QG and Capacitance; Wettable Flank Option; AEC−Q101 Qualified and PPAP Capable; RoHS Compliant | Other | NVMTSC1D3N08M7TXG |
3
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Download Model |
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MMBD1501A
onsemi
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1 | These ratings are based on a maximum junction temperature of 150°C | SOT23 (3-Pin) | MMBD1501A |
3
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Download Model |
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MC74VHC1G00DFT1G-Q
onsemi
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1 | Pin and Function Compatible with Other Standard Logic Families; Balanced Propagation Delays; High Speed: tPD = 3.5ns (Typ) at VCC = 5V; Low Power Dissipation: ICC = 1µA (Max) at TA = 25°C; Power Down Protection Provided on Inputs; Designed for 2.0 V to 5.5 V VCC Operation; Chip Complexity: FETs = ≤ 100; Pb-Free Packages are Available | SOT23 (5-Pin) | MC74VHC1G00DFT1G-Q |
3
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MMSZ4683T1G
onsemi
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1 | 500 mW Rating on FR-4 or FR-5 Board; Wide Zener Reverse Voltage Range - 1.8 V to 43 V; Package Designed for Optimal Automated Board Assembly; Small Package Size for High Density Applications; ESD Rating of Class 3 (exceeding 16 kV) per the Human Body Model Mechanical Characteristics:; CASE: Void-free, transfer-molded, thermosetting plastic case; FINISH: Corrosion resistant finish, easily solderable; MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES: 260?C for 10 Seconds; POLARITY: Cathode indicated by polarit | Small Outline Diode | MMSZ4683T1G |
3
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Download Model |
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RFD12N06RLESM9A
onsemi
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1 | Simulation Models - Temperature Compensated PSPICE® and SABER© Electrical Models - Spice and SABER© Thermal Impedance Models; UIS Rating Curve; Peak Current vs Pulse Width Curve; Switching Time vs RGS Curves; Ultra Low On-Resistance - rDS(ON) = 0.063, VGS = 10V - rDS(ON) = 0.071, VGS = 5V | Other | RFD12N06RLESM9A |
3
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Download Model |
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MC74HC1G08DFT1G-Q
onsemi
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1 | High Noise Immunity; Low Power Dissipation: ICC = 1mA (Max) at TA = 25°C; Symmetrical Output Impedance (IOH = IOL = 2mA); High Speed: tPD = 7ns (Typ) at VCC = 5V; Balanced Propagation Delays (tpLH = tpHL); Chip Complexity: FET = 44; Equivalent Gate = 11; Pb-Free Packages are Available; Designed for 2.0 V to 6.0 V Vcc Operation Wide Operating Vcc Range | SOT23 (5-Pin) | MC74HC1G08DFT1G-Q |
3
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NCP1342AMDCDAD1R2G
onsemi
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1 | QR Frequency Jittering; Quiet-Skip Technology; Integrated HV Startup with Brownout Protection; Valley Switching Operation with Valley Lockout; Integrated X2 Capacitor Discharge Capability; NTC Compatible Fault Pin; High Drive Capability: -500 mA / +800 mA; Latch input for OVP and OTP implementation; Minimum Peak Current Modulation for Rapid Frequency Foldback (RFF) | Other | NCP1342AMDCDAD1R2G |
3
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Download Model |
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SRVUD620CTT4G
onsemi
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1 | Power Rectifier, Ultra-Fast Recovery, Switch-mode, 6 A, 200 V | Other | SRVUD620CTT4G |
3
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Download Model |
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NCV3843BVD1R2G
onsemi
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1 | Oscillator Frequency Guaranteed at 250 kHz; Current Mode Operation to 500 kHz; Automatic Feed Forward Compensation; Latching PWM for Cycle−By−Cycle Current Limiting; Internally Trimmed Reference with Under-voltage Lockout; High Current Totem Pole Output; Under-voltage Lockout with Hysteresis; Low Startup and Operating Current; These are Pb−Free Devices; Trimmed Oscillator for Precise Frequency Control | Small Outline Packages | NCV3843BVD1R2G |
3
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