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FM28V100-TGTR
Infineon
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1 | F-RAM 1M (128Kx8) 2.2-3.6V F-RAM | Small Outline Packages | FM28V100-TGTR |
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CY15B204QN-40SXET
Infineon
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1 | • 4-Mb ferroelectric random access memory (F-RAM) logically organized as 512K × 8- Virtually unlimited endurance of 1000 trillion (1013) read/write cycles- 121-year data retention (see “Data retention and endurance” on page 25)- Infineon instant non-volatile write technology- Advanced high-reliability ferroelectric process• Fast serial peripheral interface (SPI)- Up to 40 MHz frequency- Supports SPI Mode 0 (0, 0) and Mode 3 (1, 1)• Sophisticated write protection scheme- Hardware protection | Small Outline Packages | CY15B204QN-40SXET |
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FM24V05-G
Infineon
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1 | F-RAM,64KB,I2C,3.4MHz,3V,SOIC8 FM24V05-G Serial-I2C FRAM Memory, 512kbit, 2 → 3.6 V 8-Pin SOIC | Small Outline Packages | FM24V05-G |
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FM25L16B-G
Infineon
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1 | FRAM 16kbit serial 20MHz SPI 3V SOIC8 | Small Outline Packages | FM25L16B-G |
3
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CY15B108QI-20LPXC
Infineon
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1 | FRAM 8Mbit Serial-SPI Interface 3.3V 8-Pin GQFN Standard | Small Outline No-lead | CY15B108QI-20LPXC |
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CY15B104QN-20LPXI
Infineon
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1 | • 4-Mb ferroelectric random access memory (F-RAM) logically organized as 512K × 8- Virtually unlimited endurance of 1000 trillion (1015) read/write cycles- 151-year data retention (See “Data retention and endurance” on page 27)- Infineon instant non-volatile write technology- Advanced high-reliability ferroelectric process• Fast serial peripheral interface (SPI)- Up to 50 MHz frequency- Supports SPI mode 0 (0, 0) and mode 3 (1, 1)• Sophisticated write protection scheme- Hardware protection | Small Outline No-lead | CY15B104QN-20LPXI |
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FM25040B-GTR
Infineon
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1 | F-RAM 4Kb Serial SPI 5V FRAM | Small Outline Packages | FM25040B-GTR |
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FM25040B-G
Infineon
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1 | Cypress Semiconductor FM25040B-G SPI FRAM Memory, 4kbit, 4.5 → 5.5 V 8-Pin SOIC | Small Outline Packages | FM25040B-G |
3
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FM33256B-G
Infineon
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1 | Real Time Clock 256Kb F-RAM Processor Companion | Small Outline Packages | FM33256B-G |
3
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CY15E064Q-SXET
Infineon
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1 | F-RAM F-RAM Memory Serial | Small Outline Packages | CY15E064Q-SXET |
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FM24CL16B-GTR
Infineon
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1 | F-RAM 16Kb Serial I2C 3V FRAM | Small Outline Packages | FM24CL16B-GTR |
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M30162040054X0PWAR
Renesas Electronics
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1 | The M3016204 series is a 16Mbit high performance non-volatile MRAM with speed up to 108MHz. The M3016204 offers superior reliability and greater than 20-year data retention (at 85°C). It does not require backup battery or capacitor(s) compared to non-volatile SRAM. The M3016204 supports Quad SPI, SDR and DDR interface. It operates at 3V typical from -40°C to +105°C (industrial plus version) and offered in an SOIC or DFN (WSON) package. | Small Outline No-lead | M30162040054X0PWAR |
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M30082040108X0ISAY
Renesas Electronics
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1 | The M3008204 series is a 8Mbit high performance non-volatile MRAM with speed up to 108MHz. The M3008204 offers superior reliability and greater than 20-year data retention (at 85°C). It does not require backup battery or capacitor(s) compared to non-volatile SRAM. The M3008204 supports Quad SPI, SDR and DDR interface. It operates at 3V typical from -40°C to +105°C (industrial plus version) and offered in an SOIC or DFN (WSON) package. | Small Outline Packages | M30082040108X0ISAY |
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M10082040054X0ISAR
Renesas Electronics
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1 | The M1008204 series is a 8Mbit high performance non-volatile MRAM with speed up to 108MHz. The M1008204 offers superior reliability and greater than 20-year data retention (at 85°C). It does not require backup battery or capacitor(s) compared to non-volatile SRAM. The M1008204 supports Quad SPI, SDR and DDR interface. It operates at 1.8V typical from -40°C to +105°C (industrial plus version) and offered in an SOIC or DFN (WSON) package. | Small Outline Packages | M10082040054X0ISAR |
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M30162040054X0ISAR
Renesas Electronics
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1 | The M3016204 series is a 16Mbit high performance non-volatile MRAM with speed up to 108MHz. The M3016204 offers superior reliability and greater than 20-year data retention (at 85°C). It does not require backup battery or capacitor(s) compared to non-volatile SRAM. The M3016204 supports Quad SPI, SDR and DDR interface. It operates at 3V typical from -40°C to +105°C (industrial plus version) and offered in an SOIC or DFN (WSON) package. | Small Outline Packages | M30162040054X0ISAR |
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M3032316035NX0IBCY
Renesas Electronics
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1 | The M3032316 is a high performance parallel interface non-volatile MRAM with 32Mbit density. It features SRAM compatible read and write access times of 35ns or 45ns. It operates from -40° to +85° (industrial version) and -40°C to +105°C (industrial plus version). The device is offered in 48-ball FBGA package. | BGA | M3032316035NX0IBCY |
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M30082040054X0PSAY
Renesas Electronics
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1 | The M3008204 series is a 8Mbit high performance non-volatile MRAM with speed up to 108MHz. The M3008204 offers superior reliability and greater than 20-year data retention (at 85°C). It does not require backup battery or capacitor(s) compared to non-volatile SRAM. The M3008204 supports Quad SPI, SDR and DDR interface. It operates at 3V typical from -40°C to +105°C (industrial plus version) and offered in an SOIC or DFN (WSON) package. | Small Outline Packages | M30082040054X0PSAY |
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M10162040108X0PSAY
Renesas Electronics
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1 | The M1016204 series is a 16Mbit high performance non-volatile MRAM with speed up to 108MHz. The M1016204 offers superior reliability and greater than 20-year data retention (at 85°C). It does not require backup battery or capacitor(s) compared to non-volatile SRAM. The M1016204 supports Quad SPI, SDR and DDR interface. It operates at 1.8V typical from -40°C to +105°C (industrial plus version) and offered in an SOIC or DFN (WSON) package. | Small Outline Packages | M10162040108X0PSAY |
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M10162040108X0IWAY
Renesas Electronics
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1 | The M1016204 series is a 16Mbit high performance non-volatile MRAM with speed up to 108MHz. The M1016204 offers superior reliability and greater than 20-year data retention (at 85°C). It does not require backup battery or capacitor(s) compared to non-volatile SRAM. The M1016204 supports Quad SPI, SDR and DDR interface. It operates at 1.8V typical from -40°C to +105°C (industrial plus version) and offered in an SOIC or DFN (WSON) package. | Small Outline No-lead | M10162040108X0IWAY |
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M30082040054X0PWAY
Renesas Electronics
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1 | The M3008204 series is a 8Mbit high performance non-volatile MRAM with speed up to 108MHz. The M3008204 offers superior reliability and greater than 20-year data retention (at 85°C). It does not require backup battery or capacitor(s) compared to non-volatile SRAM. The M3008204 supports Quad SPI, SDR and DDR interface. It operates at 3V typical from -40°C to +105°C (industrial plus version) and offered in an SOIC or DFN (WSON) package. | Small Outline No-lead | M30082040054X0PWAY |
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M10082040054X0PWAY
Renesas Electronics
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1 | The M1008204 series is a 8Mbit high performance non-volatile MRAM with speed up to 108MHz. The M1008204 offers superior reliability and greater than 20-year data retention (at 85°C). It does not require backup battery or capacitor(s) compared to non-volatile SRAM. The M1008204 supports Quad SPI, SDR and DDR interface. It operates at 1.8V typical from -40°C to +105°C (industrial plus version) and offered in an SOIC or DFN (WSON) package. | Small Outline No-lead | M10082040054X0PWAY |
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M10162040054X0PSAY
Renesas Electronics
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1 | The M1016204 series is a 16Mbit high performance non-volatile MRAM with speed up to 108MHz. The M1016204 offers superior reliability and greater than 20-year data retention (at 85°C). It does not require backup battery or capacitor(s) compared to non-volatile SRAM. The M1016204 supports Quad SPI, SDR and DDR interface. It operates at 1.8V typical from -40°C to +105°C (industrial plus version) and offered in an SOIC or DFN (WSON) package. | Small Outline Packages | M10162040054X0PSAY |
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CY15B104QSN-108SXI
Infineon
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1 | F-RAM 4Mb F-RAM 108 MHz QSPI | Small Outline Packages | CY15B104QSN-108SXI |
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CY15B108QN-40LPXI
Infineon
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1 | Cypress Semiconductor, CY15B108QN-40LPXI | Small Outline No-lead | CY15B108QN-40LPXI |
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FM28V020-SG
Infineon
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1 | FM28V020-SG Parallel FRAM Memory, 256kbit, 70ns, 2 → 3.6 V 28-Pin SOIC | Small Outline Packages | FM28V020-SG |
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![Part Image](["https://componentsearchengine.com/Images/9/FM28V100-TGTR.jpg",null,null])
![Part Image](["https://componentsearchengine.com/2D/0T/19704486.1.1.png",null,null])
![Part Image](["https://componentsearchengine.com/Images/9/FM24V05-G.jpg",null,null])
![Part Image](["https://componentsearchengine.com/Images/9/FM25L16B-G.jpg",null,null])
![Part Image](["https://componentsearchengine.com/Images/9/CY15B108QI-20LPXC.jpg",null,null])
![Part Image](["https://componentsearchengine.com/Images/3/CY15B104QN-20LPXI.jpg",null,null])
![Part Image](["https://componentsearchengine.com/Images/9/FM25040B-GTR.jpg",null,null])
![Part Image](["https://componentsearchengine.com/Images/9/FM25040B-G.jpg",null,null])
![Part Image](["https://componentsearchengine.com/Images/9/FM33256B-G.jpg",null,null])
![Part Image](["https://componentsearchengine.com/Images/9/CY15E064Q-SXET.jpg",null,null])
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