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NGTG30N60FWG
onsemi
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1 | Obsolete - IGBT, 650V 35A FS2 Solar/UPS | Transistor Outline, Vertical | NGTG30N60FWG |
3
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AFGH4L60T120RW-STD
onsemi
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1 | IGBT – Power, Single N-Channel, Field Stop VII (FS7), SCR, TO247-4L 1200 V, 1.66 V, 60 A | Other | AFGH4L60T120RW-STD |
3
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STGW40H120F2
STMicroelectronics
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1 | Trench gate field-stop IGBT, H series 1200 V, 40 A high speed | Transistor Outline, Vertical | STGW40H120F2 |
3
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GT50N322A
Toshiba
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1 | Pb-F IGBT / TRANSISTOR TO-3PN Ic=50A Vces=600V | Transistor Outline, Vertical | GT50N322A |
3
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FGP3040G2-F085
onsemi
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1 | SCIS Energy = 300mJ at TJ = 25°C; Logic Level Gate Drive; Qualified to AEC Q101; RoHS Compliant | Transistor Outline, Vertical | FGP3040G2-F085 |
3
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RJP4301APP-M0#T2
Renesas Electronics
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1 | Support is limited to customers who have already adopted these products.Renesas provides various IGBTs that are best support for digital still cameras, analog cameras and so on. | Transistor Outline, Vertical | RJP4301APP-M0#T2 |
3
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FGH75T65UPD-F085
onsemi
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1 | Maximum Junction Temperature : TJ= 175oC; Qualified to Automotive Requirements of AEC-Q101; Tightened Parameter Distribution; High current capability; Positive Temperaure Co-efficient for easy parallel operating; RoHS compliant; Low saturation voltage: VCE(sat)= 1.65V(Typ.) @ IC= 75A; High input impedance | Transistor Outline, Vertical | FGH75T65UPD-F085 |
3
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STGWA50M65DF2AG
STMicroelectronics
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1 | Automotive-grade trench gate field-stop 650 V, 50 A low-loss M series IGBT in a TO-247 long leads package | Transistor Outline, Vertical | STGWA50M65DF2AG |
3
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FGA20S125P-SN00336
onsemi
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1 | Obsolete - IGBT, 1400V, 20A, Shorted-anode | Transistor Outline, Vertical | FGA20S125P-SN00336 |
3
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FGI3040G2-F085
onsemi
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1 | Qualified to AEC Q101; Logic Level Gate Drive; RoHS Compliant; SCIS Energy = 300mJ at TJ = 25℃ | Transistor Outline, Vertical | FGI3040G2-F085 |
3
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STGP20H60DF
STMicroelectronics
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1 | Trench gate field-stop 600 V, 20 A high speed IGBT | Transistor Outline, Vertical | STGP20H60DF |
3
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ISL9V2040D3ST
onsemi
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1 | SCIS Energy = 200 mJ at TJ = 25°C; Logic Level Gate Drive; Space-Saving D - Pak Package Available | Other | ISL9V2040D3ST |
3
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MIW50N120AT1Y-BP
MCC
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1 | Trench and Field Stop IGBT 1200V 50A | Transistor Outline, Vertical | MIW50N120AT1Y-BP |
3
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STGF15H60DF
STMicroelectronics
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1 | STMicroelectronics STGF15H60DF, IGBT Transistor, 30 A 600 V, 1MHz, 3-Pin TO-220FP | Transistor Outline, Vertical | STGF15H60DF |
3
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STGWA30H65DFB2
STMicroelectronics
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1 | Trench gate field-stop, 650 V, 30 A, high-speed HB2 series IGBT in a TO-247 long leads package | Transistor Outline, Vertical | STGWA30H65DFB2 |
3
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STGWT80H65DFB
STMicroelectronics
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1 | STMicroelectronics STGWT80H65DFB, IGBT Transistor, 120 A 650 V, 1MHz, 3-Pin TO-3P | Transistor Outline, Vertical | STGWT80H65DFB |
3
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FGA40T65SHD
onsemi
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1 | Maximum Junction Temperature : TJ =175°C; Low Saturation Voltage: VCE(sat) =1.6 V(Typ.) @ IC = 40 A; Positive Temperature Co-efficient for Easy Parallel Operating; 100% of the Parts Tested for ILM(1); High Current Capability; Tighten Parameter Distribution; Fast Switching; RoHS Compliant; High Input Impedance | Transistor Outline, Vertical | FGA40T65SHD |
3
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NGTB60N60SWG
onsemi
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1 | Obsolete - IGBT, 650V 60A Field Stop 2 IGBT | Transistor Outline, Vertical | NGTB60N60SWG |
3
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STGP10H60DF
STMicroelectronics
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1 | STMicroelectronics STGP10H60DF, IGBT Transistor, 20 A 600 V, 1MHz, 3-Pin TO-220 | Transistor Outline, Vertical | STGP10H60DF |
3
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STGP19NC60SD
STMicroelectronics
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1 | 20 A, 600 V fast IGBT with Ultrafast diode | Transistor Outline, Vertical | STGP19NC60SD |
3
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STGWA8M120DF3
STMicroelectronics
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1 | Trench gate field-stop 1200 V, 8 A low-loss M series IGBT in a TO-247 and TO-247 long leads packages | Transistor Outline, Vertical | STGWA8M120DF3 |
3
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STGB30H60DLFB
STMicroelectronics
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1 | Trench gate field-stop IGBT, HB series 600 V, 30 A high speed | Other | STGB30H60DLFB |
2
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STGD18N40LZT4
STMicroelectronics
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1 | STMICROELECTRONICS - STGD18N40LZT4 - IGBT Single Transistor, 25 A, 1.35 V, 125 W, 390 V, TO-252 (DPAK), 3 Pins | Other | STGD18N40LZT4 |
3
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FGH20N60SFDTU
onsemi
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1 | High input impedance; Low saturation voltage: VCE(sat) =2.2V @ IC = 20A; Fast switching: EOFF =8uJ/A ; High current capability; RoHS compliant | Transistor Outline, Vertical | FGH20N60SFDTU |
3
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NXH600N105L7F5SHG
onsemi
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1 | Module with low thermal impedance baseplate; Solder pin | Other | NXH600N105L7F5SHG |
3
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![Part Image](["https://media.rs-online.com/t_large/R7961375-01.jpg",null,null])
![Part Image](["https://componentsearchengine.com/Images/9/STGW40H120F2.jpg",null,null])
![Part Image](["https://componentsearchengine.com/Images/1/GT50N322A.jpg",null,null])
![Part Image](["https://componentsearchengine.com/2D/0T/2079472.3.1.png",null,null])
![Part Image](["https://www.mouser.com/images/stmicroelectronics/images/to-247-long-leads_7_SPL.JPG",null,null])
![Part Image](["https://componentsearchengine.com/Images/9/FGA20S125P-SN00336.jpg",null,null])
![Part Image](["https://componentsearchengine.com/Images/1/STGP20H60DF.jpg",null,null])
![Part Image](["https://componentsearchengine.com/2D/0/20647000.png",null,null])
![Part Image](["https://componentsearchengine.com/Images/9/STGF15H60DF.jpg",null,null])
![Part Image](["https://componentsearchengine.com/Images/3/STGWA30H65DFB2.jpg",null,null])
![Part Image](["https://media.rs-online.com/t_large/R8297136-01.jpg",null,null])
![Part Image](["https://media.rs-online.com/t_large/R8427914-01.jpg",null,null])
![Part Image](["https://componentsearchengine.com/Images/9/STGP10H60DF.jpg",null,null])
![Part Image](["https://componentsearchengine.com/Images/1/STGP19NC60SD.jpg",null,"//content.supplyframe.com/images/process/fit-in/100x100/p/to220ab_3.jpg"])
![Part Image](["https://componentsearchengine.com/Images/9/STGWA8M120DF3.jpg",null,null])
![Part Image](["https://componentsearchengine.com/Images/1/STGB30H60DLFB.jpg",null,null])
![Part Image](["https://componentsearchengine.com/Images/9/STGD18N40LZT4.jpg",null,"//content.supplyframe.com/images/process/fit-in/100x100/p/to252_3.jpg"])
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