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S25HL01GTFAMHM013
Infineon
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1 | FLASH - NOR (SLC) Memory IC 1Gbit SPI - Quad I/O, QPI 166 MHz 16-SOIC | Small Outline Packages | S25HL01GTFAMHM013 |
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VJ0805Y103MFAMC
Vishay
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1 | Multilayer Ceramic Capacitors MLCC - SMD/SMT | Capacitor Chip Non-polarised | VJ0805Y103MFAMC |
3
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VJ0805A101KFAMP
Vishay
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1 | Multilayer Ceramic Capacitors MLCC - SMD/SMT | Capacitor Chip Non-polarised | VJ0805A101KFAMP |
3
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S29CD032J0RFAM010
Infineon
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1 | IC FLASH 32MBIT PAR 75MHZ 80FBGA | BGA | S29CD032J0RFAM010 |
3
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FAM65CR51ADZ1
onsemi
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1 | Integrated SIP or DIP Boost Converter Stage Power Module for On−board Charger (OBC) in EV−PHEV; 5 kV/1 sec Electrically Isolated Substrate for Easy Assembly; Compact Design for Low Total Module Resistance; Module Serialization for Full Traceability; Lead Free, RoHS and UL94V−0 Compliant; Automotive Qualified per AEC Q101 and AQG324 Guidelines | Other | FAM65CR51ADZ1 |
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FAM65HR51DS1
onsemi
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1 | SIP or DIP H−Bridge Power Module for On−board Charger (OBC) in EV−PHEV; High Voltage Snubber Capacitor for Low Noise at High Voltage Battery; 5 kV/1 sec Electrically Isolated Substrate for Easy Assembly; Compact Design for Low Total Module Resistance; Module Serialization for Full Traceability; Lead Free, RoHS and UL94V−0 Compliant; Automotive Qualified per AEC Q101 and AQG324 Guidelines | Other | FAM65HR51DS1 |
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NFAM2065L4B
onsemi
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1 | Power Driver Module IGBT 3 Phase 650 V 20 A 39-PowerDIP Module (1.413", 35.90mm), 29 Leads | Other | NFAM2065L4B |
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VJ0603Y103JFAMC
Vishay
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1 | Multilayer Ceramic Capacitors MLCC - SMD/SMT | Capacitor Chip Non-polarised | VJ0603Y103JFAMC |
3
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VJ1206A331JFAMT
Vishay
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1 | Multilayer Ceramic Capacitors MLCC - SMD/SMT | Capacitor Chip Non-polarised | VJ1206A331JFAMT |
3
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NFAM3812SCBUT
onsemi
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1 | Intelligent Power Module (IPM) Inverter, 1200 V, 50 A | Other | NFAM3812SCBUT |
3
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FAM65CR51AXZ1
onsemi
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1 | Integrated SIP or DIP Boost Converter Stage Power Module for On−board Charger (OBC) in EV−PHEV; 5 kV/1 sec Electrically Isolated Substrate for Easy Assembly; Compact Design for Low Total Module Resistance; Module Serialization for Full Traceability; Lead Free, RoHS and UL94V−0 Compliant; Automotive Qualified per AEC Q101 and AQG324 Guidelines | Other | FAM65CR51AXZ1 |
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W25Q32JVSFAM
Winbond
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1 | 32Mb Serial NOR Flash 133MHz SOP16 | Small Outline Packages | W25Q32JVSFAM |
3
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FAM65CR51DZ2
onsemi
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1 | Power Driver Module MOSFET 2 Independent 650 V 33 A 12-SSIP Exposed Pad, Formed Leads | Other | FAM65CR51DZ2 |
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RFAM3790CSB
Qorvo
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1 | 45 - 1218 MHz GaAs Edge QAM Integrated Amplifier | Other | RFAM3790CSB |
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RFAM3790SR
Qorvo
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1 | 45 - 1218 MHz GaAs Edge QAM Integrated Amplifier | Other | RFAM3790SR |
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NFAM5312SCBUT
onsemi
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1 | 1200V 40A 3-Phase SiC MOSFET Inverter, Including Control ICs for Gate Drive and Protections; Active Logic Interface; Built-in Under-voltage Protection (UVP); Built−In Bootstrap Diodes/Resistors; Separate Low-side SiC MOSFET Source Connections for Individual Current Sensing of Each Phase; Temperature Sensor (VTS Output by LVIC or Thermistor); This is a Pb−Free Device | Other | NFAM5312SCBUT |
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NFAM1512L7B
onsemi
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1 | Three−phase 1200 V, 15 A IGBT Module with Independent Drivers; Low-Loss, Short-Circuit Rated IGBTs (FS7); Built−in Under−voltage Protection (UVP); Integrated Bootstrap Diodes and Resistors; Single-Grounded Power Supply; UL Certification: E339285; This is a Pb−Free Device | Other | NFAM1512L7B |
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RFAM3620BSB
Qorvo
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1 | 45 - 1218 MHz, 36dB, 12V, GaAs pHEMT-MESFET, Edge QAM MCM | Other | RFAM3620BSB |
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W25M512JVFAM
Winbond
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1 | 512Mb Serial NOR Flash 104MHz SOP16 2.7V - 3.6V -40℃ ~ 85℃ / -40℃ ~ 105℃ / -40℃ ~ 125℃ | Small Outline Packages | W25M512JVFAM |
3
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RFAM3620BSQ
Qorvo
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1 | 45 - 1218 MHz, 36dB, 12V, GaAs pHEMT-MESFET, Edge QAM MCM | Other | RFAM3620BSQ |
3
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FAM65V05DF1
onsemi
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1 | UL Certified; 27 pin Auto SPM® module; Module serialization for full traceability; 650 V-50A 3-phase IGBT IPM with low loss IGBTs and soft recovery diodes optimized for auxiliary inverter in Hybrid & Electric Vehicle applications; Integrated gate drivers with Internal VS connection, Under Voltage lockout, Over-current shutdown, Temperature Sensing Unit and Fault reporting ; Transfer molded Double Dual Inline Package (DIP) outline; Electrically isolated DBC substrate with low thermal resistance | Other | FAM65V05DF1 |
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NFAM5065L4BT
onsemi
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1 | 650 V - 50 A 3-Phase IGBT Inverter with Integral Gate Drivers and Protection; Low-Loss, Short-Circuit Rated IGBTs (FS4); Very Low Thermal Resistance Using; Built-In Bootstrap Diodes and Dedicated Vs Pins Simplify PCB Layout; Single-Grounded Power Supply; Thermister Built-In; Isolation Rating: 2500 Vrms / 1 min. | Other | NFAM5065L4BT |
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NFAM5065L4B
onsemi
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1 | 650 V - 50 A 3-Phase IGBT Inverter with Integral Gate Drivers and Protection; Low-Loss, Short-Circuit Rated IGBTs (FS4); Very Low Thermal Resistance Using; Built-In Bootstrap Diodes and Dedicated Vs Pins Simplify PCB Layout; Single-Grounded Power Supply; Isolation Rating: 2500 Vrms / 1 min. | Other | NFAM5065L4B |
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S25HL512TFAMHI010
Infineon
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1 | FLASH - NOR Memory IC 512Mbit SPI - Quad I/O 166 MHz 16-SOIC | Small Outline Packages | S25HL512TFAMHI010 |
3
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S29CD016J0MFAM010
Infineon
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1 | FLASH - NOR Memory IC 16Mbit Parallel 56 MHz 54 ns 80-FBGA (13x11) | BGA | S29CD016J0MFAM010 |
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![Part Image](["https://componentsearchengine.com/2D/0T/22116891.2.1.png",null,null])
![Part Image](["https://componentsearchengine.com/Images/1/VJ0805Y103MFAMC.JPG",null,null])
![Part Image](["https://componentsearchengine.com/Images/1/VJ0805A101KFAMP.JPG",null,null])
![Part Image](["https://componentsearchengine.com/2D/0T/18638107.1.1.png",null,null])
![Part Image](["https://www.mouser.com/images/onsemiconductor/images/DIP39_case_MODGC_DSL.jpg",null,null])
![Part Image](["https://componentsearchengine.com/Images/1/VJ0603Y103JFAMC.JPG",null,null])
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![Part Image](["https://componentsearchengine.com/2D/0/20394829.png",null,null])
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![Part Image](["https://componentsearchengine.com/2D/0/19767242.png",null,null])
![Part Image](["https://componentsearchengine.com/Images/1/S25HL512TFAMHI010.jpg",null,null])
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