Showing 25 of 116445 results
| Image | Part Number | D.S | Description | Package Category | Prices / Stock | Model | Action |
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| Image | Part Number | D.S | Description | Package Category | Prices / Stock | Model | Action |
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FOD3120TSV
onsemi
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1 | High noise immunity characterized by 35kV/µs minimum common mode rejection; 2.5A peak output current driving capability for most 800V/20A IGBT; Use of P-channel MOSFETs at output stage enables output voltage swing close to the supply rail; Wide supply voltage range from 15V to 30V; Fast switching speed; 400ns max. propagation delay; 100ns max. pulse width distortion; Under-Voltage LockOut (UVLO) with hysteresis; Extended industrial temperate range, -40°C to 100°C temperature range; Safety and regulatory app | Small Outline Packages | FOD3120TSV |
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Download Model |
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UF3C120400B7S
onsemi
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1 | On-resistance RDS(on); Maximum operating temperature: 175 ?C; Excellent Reverse Recover; Low Gate Charge | Other | UF3C120400B7S |
3
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Download Model |
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UJ4SC075009K4S
onsemi
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1 | Silicon Carbide (SiC) Cascode JFET - EliteSiC, Power N-Channel, TO-247-4L, 750V, 9 mohm | Other | UJ4SC075009K4S |
3
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Download Model |
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NTMT045N065SC1
onsemi
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1 | Low Effective Output Capacitance (Coss = 162 pF); Zero reverse recovery current of body diode; Max Junction Temperature 175°C; Typ. RDS(on) = 33 mΩ @ Vgs : 18V Low conduction loss; Leadless thin SMD package; Kelvin Source Configuration; Ultra Low Gate Charge (Qg(tot) = 105 nC); 650V rated; 100% Avalanche Tested; These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant; Moisture Sensitivity Level 1 guarantee; Internal Gate Resistance: 3.1 Ω | Other | NTMT045N065SC1 |
3
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Download Model |
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NXV65HR82DS2
onsemi
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1 | MOSFET APM16-CAB SF3 650V 82MOHM | Other | NXV65HR82DS2 |
3
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NXH010P120MNF1PTG
onsemi
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1 | Recommended gate voltage 18V - 20V; Low thermal resistance; Options for TIM or no TIM | Other | NXH010P120MNF1PTG |
3
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Download Model |
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CPH5518-TL-E
onsemi
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1 | Obsolete - Bipolar Transistor, (-)50V, (-)3A, Low VCE(sat) Complementary Dual CPH5 | Other | CPH5518-TL-E |
3
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NCV33375ST3.3T3G
onsemi
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1 | Internal Current and Thermal Limiting; Low Input-to-Output Voltage Differential of 25 mV at IO = 10 mA, and 260 mV at IO = 300 mA; Logic Level ON/OFF Control; Low Quiescent Current (0.3 mA in OFF mode; 125 mA in ON mode); Stable with Output Capacitance of only 0.33 mF for 2.5 V Output Voltage; Extremely Tight Line and Load Regulation | SOT223 (3-Pin) | NCV33375ST3.3T3G |
3
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Download Model |
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MC74HC02ADR2G
onsemi
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1 | Operating Voltage Range: 2.0 to 6.0 V; Output Drive Capability: 10 LSTTL Loads; Outputs Directly Interface to CMOS, NMOS, and TTL; Low Input Current: 1.0 mA; High Noise Immunity Characteristic of CMOS Devices; In Compliance with the Requirements Defined by JEDEC Standard No. 7A; Chip Complexity: 40 FETs or 10 Equivalent Gates; Pb-Free Packages are Available | Small Outline Packages | MC74HC02ADR2G |
3
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BC846CMTF
onsemi
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1 | Obsolete - NPN Bipolar Transistor | SOT23 (3-Pin) | BC846CMTF |
3
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NV25640DWHFT3G
onsemi
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1 | Automotive Temperatures Grade0: -40°C to +150°C/VCC = 2.5V to 5.5V; SOIC and TSSOP 8−pad Packages; 20/ 10 MHz SPI Compatible; SPI Modes (0,0) & (1,1); 32-byte Page Write Buffer; Self-timed Write Cycle; Hardware and Software Protection; Block Write Protection - Protect ¼, ½ or Entire EEPROM Array; Low Power CMOS Technology; 200 Year Data Retention; Additional Identification Page with Permanent Write Protection; NV Prefix for Automotive and Other Applications Requiring Site and Change Control; Program/Erase C | Small Outline Packages | NV25640DWHFT3G |
3
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Download Model |
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DTC143EET1G
onsemi
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1 | Simplifies Circuit Design; Reduces Board Space; Reduces Component Count; NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable; These Devices are PbFree, Halogen Free/BFR Free and are RoHS Compliant | SOT23 (3-Pin) | DTC143EET1G |
3
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Download Model |
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FDMS86102LZ
onsemi
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1 | Max rDS(on) = 37 mΩ at VGS = 4.5 V, ID = 5.8 A; 100% UIL Tested ; HBM ESD protection level > 6 KV typical (Note 4); RoHS Compliant; Max rDS(on) = 25 mΩ at VGS = 10 V, ID = 7 A | Other | FDMS86102LZ |
3
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74LVXC4245MTCX
onsemi
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1 | Functionally compatible with the 74 series 245; Bidirectional interface between 5V and 3V-to-5V buses; Guaranteed simultaneous switching noise level and dynamic threshold performance; Flexible VCCB operating range; Allows B Port and VCCB to float simultaneously when OE# is HIGH; Implements patented EMI reduction circuitry; Outputs source/sink up to 24 mA; Control inputs compatible with TTL level | Small Outline Packages | 74LVXC4245MTCX |
3
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Download Model |
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MC33025DWG
onsemi
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1 | Obsolete - Up-to-1 MHz Dual Output (Push-pull or H-Bridge) Voltage-or-Current-Mode PWM Controller | Small Outline Packages | MC33025DWG |
3
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Download Model |
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MJE181G
onsemi
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1 | Annular Construction for Low Leakages - ICBO = 100 nA (Max) @ Rated VCB; DC Current Gain - hFE = 30 (Min) @ IC = 0.5 Adc hFE = 12 (Min) @ IC = 1.5 Adc; Current-Gain - Bandwidth Product - fT = 50 MHz (Min) @ IC = 100 mAdc; Collector-Emitter Sustaining Voltage - VCEO(sus) = 60 Vdc - MJE171, MJE181 VCEO(sus) = 80 Vdc - MJE172, MJE182; Pb-Free Packages are Available | Other | MJE181G |
3
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Download Model |
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BC547CBU
onsemi
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1 | Bipolar (BJT) Transistor NPN 45 V 100 mA 300MHz 500 mW Through Hole TO-92-3 | Other | BC547CBU |
3
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Download Model |
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NCV70514MW003BR2G
onsemi
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1 | Dual H−bridge for 2−phase Stepper Motors; Programmable Peak−current up to 800 mA; On−chip Current Translator; SPI Interface with Daisy Chain Capability; 7 Step Modes from Full−step up to 32 Micro−steps; Fully Integrated Current−sensing and Current−regulation; On Chip Stall Detection; PWM Current Control with Automatic Selection of Fast and Slow Decay; Fixed PWM Frequency; Active Fly−back Diodes; Full Output Protection and Diagnosis; Thermal Warning and Shutdown; Compatible with 3.3 V Microcontrollers, 5 V T | Quad Flat No-Lead | NCV70514MW003BR2G |
3
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2V7002LT1G
onsemi
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1 | 2V Prefix for AEC−Q101 Qualified and PPAP Capable; RoHS Compliant | SOT23 (3-Pin) | 2V7002LT1G |
3
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Download Model |
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NCP702MX28TCG
onsemi
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1 | Last Shipments - LDO Regulator, 200 mA, Ultra-Low Dropout, Ultra-Low Iq, High PSRR, Ultra-Low Noise | Other | NCP702MX28TCG |
3
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BC807-40LT1G
onsemi
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1 | Pb-Free Packages are Available; S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable | SOT23 (3-Pin) | BC807-40LT1G |
3
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Download Model |
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UJ3D1210KS
onsemi
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1 | Operating temperature: 175?C (max); Easy paralleling; Extremely fast switching not dependent on temperature; No reverse or forward recovery; Enhanced surge current capability, MPS structure; Excellent thermal performance, Ag sintered; 100% UIS tested | Transistor Outline, Vertical | UJ3D1210KS |
3
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NTMT280N60S5Z
onsemi
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1 | Internal Gate Resistance: 5.1 Ω; 650V @ TJ = 150C; Leadless Ultra-thin SMD package; Kelvin Source Configuration; Ulta Low Gate Charge (Typ. Qg = 18.1 nC); Typ. RDS(on) = 224 mohm; 100% Avalanche Tested; RoHS Compliant; Moisture Sensitivity Level 1 guarantee | Other | NTMT280N60S5Z |
3
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FFSH40120ADN-F085
onsemi
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1 | No Reverse Recovery / No Forward Recovery; Positive Temperature Coefficient; Avalanche Rated 210 mJ; Max Junction Temperature 175 °C; AEC-Q101 qualified and PPAP Capable | Transistor Outline, Vertical | FFSH40120ADN-F085 |
3
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Download Model |
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CM2009-02QR
onsemi
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1 | Obsolete - HDMI Transmitter Port Protection and Interface Device | Small Outline Packages | CM2009-02QR |
3
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