Showing 25 of 116545 results
| Image | Part Number | D.S | Description | Package Category | Prices / Stock | Model | Action |
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| Image | Part Number | D.S | Description | Package Category | Prices / Stock | Model | Action |
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MC34151DR2G
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1 | Efficient High Frequency Operation; Pin Out Equivalent to DS0026 and MMH0026; Two Independent Channels with 1.5 A Totem Pole Output; CMOS/LSTTL Compatible Inputs with Hysteresis; Output Rise and Fall Times of 15 ns with 1000 pF Load; Undervoltage Lockout with Hysteresis; Low Standby Current; Enhanced System Performance with Common Switching Regulator Control ICs | Small Outline Packages | MC34151DR2G |
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NL17SG04DFT2G
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1 | Obsolete - Buffer with Open-Drain Output | SOT23 (5-Pin) | NL17SG04DFT2G |
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NRVFES6J
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1 | Low Forward Voltage Drop; Ultrafast Recovery Time ; RoHS Compliant Green Mold Compound as per IEC61249; Low Thermal Resistance; Very Stable Operation at Industrial Temperature, 150c; Very Low Profile : Typical Height of 1.1mm; Lead Free in compliance with EU RoHS 2011/65/EU Directive; NRV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable | Other | NRVFES6J |
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BCP53T1G
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1 | High Current: 1.5 Amps; NPN Complement is BCP56; The SOT-223 Package can be soldered using wave or reflow. The formed leads absorb thermal stress during soldering, eliminating the possibility of damage to the die; Available in 12 mm Tape and Reel Use BCP53T1G to order the 7 inch/1000 unit reel. Use BCP53T3G to order the 13 inch/4000 unit reel.; Device Marking: BCP53 = AH BCP53-10 = AH-10 BCP53-16 = AH-16; These Devices are PbFree, Halogen Free/BFR Free and are RoHS Compliant | SOT223 (3-Pin) | BCP53T1G |
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NSVT807CMTWFTBG
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1 | Wettable Flank Package | Other | NSVT807CMTWFTBG |
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MJD127T4G
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1 | Bipolar (BJT) Transistor PNP - Darlington 100 V 8 A 4MHz 1.75 W Surface Mount DPAK | Other | MJD127T4G |
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CAT93C86VI-GT3
onsemi
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1 | High Speed Operation: 3 MHz (5 V); 1.8 V to 5.5 V Supply Voltage Range; Selectable x8 or x16 Memory Organization; Self-timed Write Cycle with Auto-clear; Sequential Read; Hardware and Software Write Protection; Power-up Inadvertent Write Protection; Low Power CMOS Technology; Program Enable (PE) Pin; 1,000,000 Program/Erase Cycles; 100 Year Data Retention; Industrial Temperature Ranges; 8-pin SOIC Packages; This Device is Pb-Free, Halogen Free/BFR Free, and RoHS Compliant | Small Outline Packages | CAT93C86VI-GT3 |
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BAS21DW5T1G
onsemi
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1 | These Devices are Pb-free, Halogen Free/BFR Free and are RoHS Compliant; S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AECQ101 Qualified and PPAP Capable | SOT23 (5-Pin) | BAS21DW5T1G |
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UJ3D06530TS
onsemi
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1 | Operating temperature: 175?C (max); Easy paralleling; Extremely fast switching not dependent on temperature; No reverse or forward recovery; Enhanced surge current capability, MPS structure; Excellent thermal performance, Ag sintered; 100% UIS tested | Transistor Outline, Vertical | UJ3D06530TS |
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FSA2567MPX
onsemi
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1 | 3kV ESD Rating, >12kV Power/GND ESD Rating; Low On Resistance for Data Path: 6Ω Typical ; Packaged in: ; Low On Capacitance for Data Path: 10pF Typical ; Wide -3db Bandwidth: > 160MHz ; Low Power Quiescent Consumption: 1µA Maximum ; Pb-free 16-Lead UMLP (1.8 x 2.6mm) ; Pb-free 16-Lead MLP ; Low On Resistance for Supply Path 0.4Ω Typical ; 15µA Maximum ICCT Over Expanded Voltage Range (VIN=1.8V, VCC=4.3V) | Quad Flat No-Lead | FSA2567MPX |
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NTMTS0D7N04CTXG
onsemi
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1 | Small Footprint (8x8 mm); Low RDS(on); Low QG and Capacitance; RoHS Compliant | Other | NTMTS0D7N04CTXG |
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FQP11N40C
onsemi
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1 | Low gate charge ( Typ. 28nC); 100% avalanche tested; Low Crss ( Typ. 85pF); 10.5A, 400V, RDS(on) = 530mΩ(Max.) @VGS = 10 V, ID = 5.25A | Transistor Outline, Vertical | FQP11N40C |
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1N5404G
onsemi
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1 | Polarity: Cathode Indicated by Polarity Band; High Current to Small Size; Lead and Mounting Surface Temperature for Soldering Purposes: 220°C Max. for 10 Seconds, 1/16" from case; Marking: 1N5400, 1N5401, 1N5402, 1N5404, 1N5406, 1N5407, 1N5408; Weight: 1.1 gram (approximately); High Surge Current Capability; Low Forward Voltage Drop; Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable; Available in Volume Quantities; Case: Epoxy, Molded; Void-Free Economical Plastic P | Diodes, Axial Diameter Horizontal Mounting | 1N5404G |
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NC7WZ132L8X
onsemi
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1 | Matches the performance of LCX when operated at 3.3V VCC; Overvoltage tolerant inputs facilitate 5V to 3V translation; Broad VCC Operating Range; 1.65V to 5.5V; High Output Drive; ±24 mA at 3V VCC; Power down high impedance inputs/output; Ultra High Speed; tPD 3.1 ns typ into 50 pF at 5V VCC; Space saving US8 surface mount package; MicroPak™ Pb-Free leadless package; Schmitt trigger inputs are tolerant of slow changing input signals; Patented noise/EMI reduction circuitry implemented | Other | NC7WZ132L8X |
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NVMFS5113PLT1G
onsemi
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1 | Low On-Resistance; High Current Capability; AEC-Q101 Qualified and PPAP Capable; Avalanche Energy Specified; Wettable Flank (WF) Option NVMFS5113PLWF; RoHS Compliant | Other | NVMFS5113PLT1G |
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TIP30CG
onsemi
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1 | Pb-Free Packages are Available | Transistor Outline, Vertical | TIP30CG |
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NTMFD5C672NLT1G
onsemi
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1 | Low on resistance; High current capability; RoHS Compliant; Small footprint (5x6 mm) | Other | NTMFD5C672NLT1G |
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SZNUF4403MNT1G
onsemi
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1 | EMI Filtering and ESD Protection; Integration of 20 Discretes Components; Compliance with IEC61000-4-2 (Level 4)- 18kV Contact and 30 kV Air; DFN Package, 1.6 x 1.6 mm; Moisture Sensitivity Level 1; ESD Ratings: Machine Model = C and Human Body Model = 3B | Small Outline No-lead | SZNUF4403MNT1G |
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NIS5420MT6TXG
onsemi
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1 | Current sensing (ISENSE); Low quiescent current; Tri-state EN/FLT pin; Programmable current limit; Programmable slew rate | Other | NIS5420MT6TXG |
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SMUN5214DW1T1G
onsemi
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1 | Simplifies Circuit Design; Reduces Board Space; Reduces Component Count; NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable; These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant | SOT23 (6-Pin) | SMUN5214DW1T1G |
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NCS20072DTBR2G
onsemi
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1 | Rail−To−Rail Output; Wide Supply Range: 2.7 V to 36 V; Wide Bandwidth: 3 MHz typical at VS = 2.7 V; High Slew Rate: 2.8 V/µs typical at VS = 2.7 V; Low Supply Current: 405 µA per channel at VS = 2.7 V; Low Input Bias Current: 5 pA typical; Wide Temperature Range: −40°C to 125°C; NCV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q100 Qualified and PPAP Capable | Small Outline Packages | NCS20072DTBR2G |
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CAT4104V-GT3
onsemi
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1 | 4 matched LED current sinks up to 175 mA; Up to 25 V operation on LED pins; Low dropout Current Source (0.4 V at 175 mA); LED current set by external resistor; High frequency PWM dimming via EN/PWM; Zero current Shutdown mode; Thermal shutdown protection | Small Outline Packages | CAT4104V-GT3 |
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UF4005
onsemi
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1 | Low forward voltage drop ; High current capability; High surge current capability ; High reliability | Diodes, Axial Diameter Horizontal Mounting | UF4005 |
3
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UF3C170400K3S
onsemi
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1 | On-resistance RDS(on); Maximum operating temperature: 175 ?C; Excellent Reverse Recover; Low Gate Charge | Transistor Outline, Vertical | UF3C170400K3S |
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NRVBSS26NT3G
onsemi
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1 | Compact Package with J–Bend Leads Ideal for Automated Handling; Highly Stable Oxide Passivated Junction; Guardring for Over–Voltage Protection; Low Forward Voltage Drop Mechanical Characteristics:; Case: Molded Epoxy; Epoxy Meets UL94, VO at 1/8 inch; Weight: 95 mg (approximately); Cathode Polarity Band; Lead and Mounting Surface Temperature for Soldering Purposes: 260°C Max. for 10 Seconds; Available in 12 mm Tape, 2500 Units per 13 inch Reel, Add "T3" Suffix to Part Number; Finish: All External Surfaces C | Diodes Moulded | NRVBSS26NT3G |
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