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Image	Part Number	D.S	Description	Package Category	Prices / Stock	Model	Action
	NCV20074DR2G onsemi	1	Rail−To−Rail Output; Wide Supply Range: 2.7 V to 36 V; Wide Bandwidth: 3 MHz typical at VS = 2.7 V; High Slew Rate: 2.8 V/µs typical at VS = 2.7 V; Low Supply Current: 405 µA per channel at VS = 2.7 V; Low Input Bias Current: 5 pA typical; Wide Temperature Range: −40°C to 125°C; Available in a variety of packages; NCV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q100 Qualified and PPAP Capable	Small Outline Packages	NCV20074DR2G	3D model available Symbol and footprint available 3	1 Download Model
	ESD9L5.0ST5G onsemi	1	Transient Voltage Suppressors ESD Protection Diodes with Ultra−Low Capacitance	Small Outline Diode Flat Lead	ESD9L5.0ST5G	3D model available Symbol and footprint available 3	1 Download Model
	FDM3622 onsemi	1	Low QRR Body Diode ; Optimized efficiency at high frequencies ; Max rDS(on) = 60mΩ at VGS = 10V, ID = 4.4A ; RoHS Compliant ; UIS Capability (Single Pulse and Repetitive PulseFormerly developmental type 82744 ; Low Miller Charge ; Max rDS(on) = 80mΩ at VGS = 6.0V, ID = 3.8A	Other	FDM3622	3D model available Symbol and footprint available 3	1 Download Model
	ESD7383NCTBG onsemi	1	This Device is Pb-Free and is RoHS Compliant.	Other	ESD7383NCTBG	3D model available Symbol and footprint available 3	1 Download Model
	1SMB5920BT3G onsemi	1	Zener Voltage Range - 3.3 V to 200 V; ESD Rating of Class 3 (>16 KV) per Human Body Model; Flat Handling Surface for Accurate Placement; Package Design for Top Side or Bottom Circuit Board Mounting Mechanical Characteristics:; CASE: Void-free, transfer-molded plastic; FINISH: All external surfaces are corrosion resistant with readily solderable leads; MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES: 260°C for 10 seconds; LEADS: Modified L-Bend providing more contact area to bond pads; POLARITY: Cathode indi	Diodes Moulded	1SMB5920BT3G	3D model available Symbol and footprint available 3	1 Download Model
	NVMFS5C460NLWFT1G onsemi	1	Small Footprint (5x6 mm); Low RDS(on); RoHS Compliant; AEC−Q101 Qualified; Wettable Flank Option; Low QG and Capacitance	Other	NVMFS5C460NLWFT1G	3D model available Symbol and footprint available 3	1 Download Model
	FQU13N06LTU onsemi	1	11A, 60V, RDS(on) = 115mΩ(Max.) @VGS = 10 V, ID = 5.5A; Low Gate Charge ( Typ. 4.5nC); Low Crss ( Typ. 17pF); 100% Avalanche Tested	Transistor Outline, Vertical	FQU13N06LTU	3D model available Symbol and footprint available 3	1 Download Model
	MM74HC74AMX onsemi	1	Low input current: 1 µA maximum; Fanout of 10 LS-TTL loads; Typical propagation delay: 20 ns; Wide power supply range: 2-6V; Low quiescent current: 40 µA maximum (74HC Series)	Small Outline Packages	MM74HC74AMX	3D model available Symbol and footprint available 3	1 Download Model
	NSR0620P2T5G onsemi	1	Very Low Forward Voltage Drop 350 mV @ 100 mA; Low Reverse Current 2.0 uA @ 10 V; Continuous Forward Current 500 mA; Power Dissipation with Minimum Trace 190 mW; Very High Switching Speed 4.0 ns @ 10 mA; Low Capacitance 12 pF @ 1.0 V	Small Outline Diode Flat Lead	NSR0620P2T5G	3D model available Symbol and footprint available 3	1 Download Model
	NCV84120DR2G onsemi	1	In-Rush Current Management; Over-temperature protection; Over-voltage protection; Over-current protection; Analog Current Sense; Diagnostic feature	Small Outline Packages	NCV84120DR2G	3D model available Symbol and footprint available 3	1 Download Model
	2N6043G onsemi	1	High DC Current Gain - hFE = 2500 (Typ) @ IC = 4.0 Adc; Low Collector-Emitter Saturation Voltage - VCE(sat) = 2.0 Vdc (Max) @ IC = 4.0 Adc - 2N6040,41, 2N6043,44 VCE(sat)= 2.0 Vdc (Max) @ IC = 3.0 Adc - 2N6042, 2N6045; Collector-Emitter Sustaining Voltage - @ 100 mAdc - VCEO(sus) = 60 Vdc (Min) - 2N6040, 2N6043 VCEO(sus)= 80 Vdc (Min) - 2N6041, 2N6044 VCEO(sus)= 100 Vdc (Min) - 2N6042, 2N6045; Monolithic Construction with Built-In Base-Emitter Shunt Resistors; Pb-Free Packages are Available	Transistor Outline, Vertical	2N6043G	3D model available Symbol and footprint available 3	1 Download Model
	MMBZ5243BLT1G onsemi	1	225 mW Rating on FR-4 or FR-5 Board; Zener Voltage Range - 2.4 V to 91 V; Package Designed for Optimal Automated Board Assembly; Small Package Size for High Density Applications; ESD Rating of Class 3 (>16 KV) per Human Body Model Mechanical Characteristics; CASE: Void-free, transfer-molded, thermosetting plastic case; FINISH: Corrosion resistant finish, easily solderable; MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES: 260C for 10 Seconds; POLARITY: Cathode indicated by polarity band; FLAMMABILITY RATING:	SOT23 (3-Pin)	MMBZ5243BLT1G	3D model available Symbol and footprint available 3	1 Download Model
	NZ9F22VT5G onsemi	1	Standard Zener Breakdown Voltage Range 2.4 V to 24 V; Steady State Power Rating of 250 mW; Small Body Outline Dimensions: 0.039 x 0.024 (1.00 mm x 0.60 mm); Low Body Height: 0.016 (0.40 mm); ESD Rating of Class 3 (>16 kV) per Human Body Model; These are PbFree Devices	Small Outline Diode Flat Lead	NZ9F22VT5G	3D model available Symbol and footprint available 3	1 Download Model
	NSI45020T1G onsemi	1	Robust Power Package: 460 mW, Wide operating voltage range, Immediate turn on Voltage surge suppressing protecting LEDs, AEC-Q101 qualified and PPAP Capable, UL94-V0 certified SBT (Self Biased Transistor) Technology, Negative Temperature Coefficient, This device is PB-Free, Halogen Free/BFR Free and is RoHS Compliant; AEC-Q101 Qualified and PPAP Capable, UL94V0 Certified	Small Outline Diode	NSI45020T1G	3D model available Symbol and footprint available 3	1 Download Model
	FDPF10N60NZ onsemi	1	RDS(on) = 640mΩ ( Typ.)@ VGS = 10V, ID = 5A; RoHS compliant; 100% avalanche tested; ESD improved capability; Improved dv/dt capability; Low gate charge ( Typ. 23nC); Low Crss ( Typ. 10pF)	Transistor Outline, Vertical	FDPF10N60NZ	3D model available Symbol and footprint available 3	1 Download Model
	BC847ALT1G onsemi	1	Moisture Sensitivity Level: 1; ESD Rating - Human Body Model: >4000 V ESD Rating - Machine Model: >400 V; Pb-Free Packages are Available; S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable	SOT23 (3-Pin)	BC847ALT1G	3D model available Symbol and footprint available 3	1 Download Model
	LM239DTBR2G onsemi	1	Low Output Saturation Voltage: 130 mV (Typ) @ 4.0 mA; Single or Split Supply Operation; TTL and CMOS Compatible; Input Common Mode Voltage Range to Gnd; ESD Clamps on the Inputs Increase Reliability without Affecting Device Operation; Low Input Bias Current: 25 nA (Typ); Low Input Offset Current: +/- 5.0 nA (Typ)	Small Outline Packages	LM239DTBR2G	3D model available Symbol and footprint available 3	1 Download Model
	NV25M01DTUTG onsemi	1	Automotive Temperature Grade 2 (-40°C to +105°C); 1.8 V to 5.5 V Supply Voltage Range; 8 lead SOIC and TSSOP Packages; 15 MHz SPI Compatible; SPI Modes (0,0) & (1,1); 256-byte Page Write Buffer; Additional Identification Page with Permanent Write Protection; Self-timed Write Cycle; Hardware and Software Protection; Block Write Protection - Protect ¼, ½ or Entire EEPROM Array; Low Power CMOS Technology; 1,000,000 Program/Erase Cycles; 100 Year Data Retention; This Device is PbFree, Halogen Free/BFR Free and	Small Outline Packages	NV25M01DTUTG	3D model available Symbol and footprint available 3	1 Download Model
	MICROFJ-30020-TSV-TR onsemi	1	High-density microcells; Optimized for high-performance timing applications, such as ToF-PET; Ultra-low dark count rates of 50 kHz/mm2 typical; J-Series sensors feature ON Semiconductor's unique 'fast output' terminal; Exceptional breakdown voltage uniformity of ±250 mV; Temperature stability of 21.5 mV/°C; 3 mm, 4 mm and 6 mm sensor sizes; Available in a reflow solder compatible TSV chip-scale package; Bias voltage of <30 V	Other	MICROFJ-30020-TSV-TR	3D model available Symbol and footprint available 3	1 Download Model
	FFSH20120A-F085 onsemi	1	Max Junction Temperature 175 °C; Avalanche Rated 100 mJ; Positive Temperature Coefficient; High Surge Current Capacity; Ease of Paralleling; No Reverse Recovery / No Forward Recovery; AEC-Q101 qualified and PPAP Capable	Transistor Outline, Vertical	FFSH20120A-F085	3D model available Symbol and footprint available 3	1 Download Model
	BVSS123LT1G onsemi	1	AEC Qualified; PPAP Capable	SOT23 (3-Pin)	BVSS123LT1G	3D model available Symbol and footprint available 3	1 Download Model
	DTC143ZET1G onsemi	1	Simplifies Circuit Design; Reduces Board Space; Reduces Component Count; NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AECQ101 Qualified and PPAP Capable; These Devices are PbFree, Halogen Free/BFR Free and are RoHS Compliant	SOT23 (3-Pin)	DTC143ZET1G	3D model available Symbol and footprint available 3	1 Download Model
	NLA9306USG onsemi	1	2-bit Bidirectional Translator for SDA and SCL Lines in MixedMode I2C Bus Applications; StandardMode, FastMode, and FastMode Plus I2C Bus and SMBus Compatible; Less Than 1.5 ns Maximum Propagation Delay to Accommodate StandardMode and FastMode I2C Bus Devices and Multiple Masters; Allows Voltage Level Translation Between: 1.0 V Vref(1) and 1.8 V, 2.5 V, 3.3 V or 5 V Vbias(ref)(2) 1.2 V Vref(1) and 1.8 V, 2.5 V, 3.3 V or 5 V Vbias(ref)(2) 1.8 V Vref(1) and 3.3 V or 5 V Vbias(ref)(2) 2.5 V Vref(1) and 5 V Vbi	Other	NLA9306USG	3D model available Symbol and footprint available 3	1 Download Model
	74AC00MTC onsemi	1	Obsolete - Quad 2-Input NAND Gate	Small Outline Packages	74AC00MTC	3D model available Symbol and footprint available 3	1 Download Model
	MC7915BTG onsemi	1	No External Components Required; Internal Thermal Overload Protection; Internal Short Circuit Current Limiting; Output Transistor Safe-Area Compensation; Available in 2% Voltage Tolerance (See Ordering Information); Pb-Free Package May be Available. The G-Suffix Denotes a Pb-Free Lead Finish.	Transistor Outline, Vertical	MC7915BTG	3D model available Symbol and footprint available 3	1 Download Model
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