Showing 25 of 116453 results
| Image | Part Number | D.S | Description | Package Category | Prices / Stock | Model | Action |
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| Image | Part Number | D.S | Description | Package Category | Prices / Stock | Model | Action |
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NCT214MT3R2G
onsemi
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1 | Board Mount Temperature Sensors TEMP SENS W MULTIPLE ADD | Small Outline No-lead | NCT214MT3R2G |
3
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HGTG30N60C3D
onsemi
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1 | Last Shipments - 600V, SMPS IGBT | Transistor Outline, Vertical | HGTG30N60C3D |
3
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Download Model |
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MGSF1N03LT1G
onsemi
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1 | N-Channel 30 V 1.6A (Ta) 420mW (Ta) Surface Mount SOT-23-3 (TO-236) | SOT23 (3-Pin) | MGSF1N03LT1G |
3
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UF3C065030B3
onsemi
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1 | N-Channel 650 V 65A (Tc) 242W (Tc) Surface Mount TO-263 (D2PAK) | Other | UF3C065030B3 |
3
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MCT5211SR2M
onsemi
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1 | IEC60747-5-2 approved (ordering option V); High CTRCE(SAT) comparable to Darlingtons; Underwriters Laboratory (UL) recognized, file #E90700, volume 2; Data rates up to 150kbits/s (NRZ); High common mode transient rejection 5kV/µs; CTR guaranteed 0°C to 70°C | Other | MCT5211SR2M |
3
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NCP1631DR2G
onsemi
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1 | 180° out of phase operation; Frequency foldback at low power; Integrated overcurrent protection, overvoltage protection, UVLO, and brown-out protection; Frequency clamped critical conduction mode (FcCrM) operation | Small Outline Packages | NCP1631DR2G |
3
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FJH1100
onsemi
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1 | Ultra Low Leakage Diod 15V 150mA | Diodes, Axial Diameter Horizontal Mounting | FJH1100 |
3
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NCP1522BSNT1G
onsemi
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1 | Obsolete - Buck Converter, DC-DC, High Efficiency, Adjustable Output Voltage, 3 MHz, 600 mA | SOT23 (5-Pin) | NCP1522BSNT1G |
3
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BC548B
onsemi
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1 | Obsolete - NPN Bipolar Transistor | Other | BC548B |
3
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MMSZ5241BT1G
onsemi
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1 | 500 mW Rating on FR-4 or FR-5 Board; ESD Rating of Class 3 (exceeding 16 kV) per the Human Body Model Mechanical Characteristics:; Package Designed for Optimal Automated Board Assembly; Small Package Size for High Density Applications; Wide Zener Reverse Voltage Range - 2.4 V to 110 V; General Purpose, Medium Current; CASE: Void-free, transfer-molded, thermosetting plastic case; FINISH: Corrosion resistant finish, easily solderable; MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES: 260?C for 10 Seconds; POLA | Small Outline Diode | MMSZ5241BT1G |
3
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UJ3D1220KSD
onsemi
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1 | 100% UIS tested; Operating temperature: 175?C (max); Easy paralleling; Extremely fast switching not dependent on temperature; No reverse or forward recovery; Enhanced surge current capability, MPS structure; Excellent thermal performance, Ag sintered | Transistor Outline, Vertical | UJ3D1220KSD |
3
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NJVMJD45H11T4G
onsemi
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1 | Complementary Pairs Simplifies Designs; Low Collector Emitter Saturation Voltage VCE(sat) = 1.0 Volt Max @ 8.0 Amperes; Lead Formed for Surface Mount Application in Plastic Sleeves (No Suffix); Straight Lead Version in Plastic Sleeves ("-1" Suffix); Lead Formed Version in 16 mm Tape and Reel for Surface Mount ("T4" Suffix); Electrically Similar to Popular D44H/D45H Series; Fast Switching Speeds; NJV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 | Other | NJVMJD45H11T4G |
3
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MMUN2140LT1G
onsemi
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1 | Simplifies Circuit Design; Reduces Board Space; Reduces Component Count; S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable; These Devices are PbFree, Halogen Free/BFR Free and are RoHS Compliant | SOT23 (3-Pin) | MMUN2140LT1G |
3
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MC33178DMR2G
onsemi
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1 | High Gain Bandwidth: 5.0 MHz; High Slew Rate: 2.0 V/µs; ESD Clamps on the Inputs Increase Ruggedness without Affecting Device Performance; Low T.C. of Input Offset Voltage: 2.0 ?V/°C; Low Total Harmonic Distortion: 0.0024% (@ 1.0 kHz w/600 W Load); Dual Supply Operation: +/-2.0 V to +/-18 V; Large Output Voltage Swing; Low Offset Voltage: 0.15 mV (Mean); 600 W Output Drive Capability | Small Outline Packages | MC33178DMR2G |
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SRV05-4MR6T1G
onsemi
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1 | ON SEMICONDUCTOR - SRV05-4MR6T1G - ESD Protection Device, 17.5 V, TSOP, 6 Pins, 300 W | SOT23 (6-Pin) | SRV05-4MR6T1G |
3
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GBU8A
onsemi
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1 | Surge Overload Rating: 200 A peak; Reliable Low-Cost Construction Utilizing Molded Plastic Technique; UL certified, UL #E258596; Glass-Passivated Junction; Ideal for Printed Circuit Bboard | Transistor Outline, Vertical | GBU8A |
3
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MMDF1N05ER2G
onsemi
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1 | Obsolete - Power MOSFET 30V 4.1 A 70 mOhm Dual Complementary SO-8 | Small Outline Packages | MMDF1N05ER2G |
3
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Download Model |
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FODM8801AR2
onsemi
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1 | Utilizing proprietary process technology to achieve high operating temperature up to 125°C; Compact half pitch, mini-flat, 4-pin package (1.27mm lead pitch, 2.4mm maximum standoff height); > 5mm creepage and clearance distance; High isolation voltage regulated by safety agency, UL1577, 3750 VAC RMS for 1 min. and DIN EN/IEC60747-5-2 (pending approval); Applicable to Infrared Ray reflow, 245°C; Guaranteed Current Transfer Ratio (CTR) specifications across full temperature range; CTR at very low input current | Small Outline Packages | FODM8801AR2 |
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FQD17P06TM
onsemi
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1 | -12A, -60V, RDS(on) = 135mΩ(Max.) @VGS = -10 V, ID = -6A; Low gate charge ( Typ. 21nC); Low Crss ( Typ. 80pF); 100% avalanche tested | Other | FQD17P06TM |
3
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SZ1SMB5936BT3G
onsemi
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1 | Zener Voltage Range - 3.3 V to 200 V; ESD Rating of Class 3 (>16 KV) per Human Body Model; Flat Handling Surface for Accurate Placement; Package Design for Top Side or Bottom Circuit Board Mounting Mechanical Characteristics:; CASE: Void-free, transfer-molded plastic; FINISH: All external surfaces are corrosion resistant with readily solderable leads; MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES: 260°C for 10 seconds; LEADS: Modified L-Bend providing more contact area to bond pads; POLARITY: Cathode indi | Diodes Moulded | SZ1SMB5936BT3G |
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NRVUS1GFA
onsemi
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1 | Low Power Loss, High Efficiency; Glass Passivated Chip Junction; Fast Switching Reverse Recovery Time: 50~75 ns Maximum; MSL 1 per J-STD-020; UL Flammability 94V-0 Classification; NRV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable; These Devices are Pb−Free, Halogen Free and are RoHS Compliant | Diodes, Axial Diameter Horizontal Mounting | NRVUS1GFA |
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MMSZ27T1G
onsemi
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1 | 500 mW Rating on FR-4 or FR-5 Board; Wide Zener Reverse Voltage Range - 2.4 V to 56 V; Package Designed for Optimal Automated Board Assembly; Small Package Size for High Density Applications; ESD Rating of Class 3 (exceeding 16 kV) per the Human Body Model Mechanical Characteristics:; CASE: Void-free, transfer-molded, thermosetting plastic case; FINISH: Corrosion resistant finish, easily solderable; MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES: 260°C for 10 Seconds; POLARITY: Cathode indicated by polarit | Small Outline Diode | MMSZ27T1G |
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SZ1SMB5937BT3G
onsemi
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1 | Zener Voltage Range - 3.3 V to 200 V; ESD Rating of Class 3 (>16 KV) per Human Body Model; Flat Handling Surface for Accurate Placement; Package Design for Top Side or Bottom Circuit Board Mounting Mechanical Characteristics:; CASE: Void-free, transfer-molded plastic; FINISH: All external surfaces are corrosion resistant with readily solderable leads; MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES: 260°C for 10 seconds; LEADS: Modified L-Bend providing more contact area to bond pads; POLARITY: Cathode indi | Diodes Moulded | SZ1SMB5937BT3G |
3
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Download Model |
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NTTFS5C454NLTAG
onsemi
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1 | Low RDS(on); Low input capacitance; Small Footprint (3.3 x 3.3 mm); RoHS Compliant | Other | NTTFS5C454NLTAG |
3
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MBRB20100CTT4G
onsemi
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1 | Package Designed for Power Surface Mount Applications; Shipped 50 units per plastic tube; Epoxy Meets UL94, VO at 1/8"; Marking: B20100; Weight: 1.7 grams (approximately); Center-Tap Configuration; Similar in Size to Industry Standard TO-220 Package Mechanical Characteristics:; Guaranteed Reverse Avalanche; Lead and Mounting Surface Temperature for Soldering Purposes: 260 C Max. for 10 Seconds; Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable; Low Forward Voltage; | Other | MBRB20100CTT4G |
3
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