IGBTs Footprint, Symbol and 3D Model search results

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Image	Part Number	D.S	Description	Package Category	Prices / Stock	Model	Action
	IGP30N60H3 Infineon	1	Infineon IGP30N60H3, IGBT Transistor, 60 A 600 V, 1MHz, 3-Pin TO-220AB	Transistor Outline, Vertical	IGP30N60H3	3D model available Symbol and footprint available 3	1 Download Model
	APT45GP120B2DQ2 Advanced Power Technology	1	POWER MOS 7® IGBT PT 1200 V 113 A 625 W Through Hole -55 to 150°C	Other	APT45GP120B2DQ2	3D model available Symbol and footprint available 3	1 Download Model
	IKD06N60RATMA1 Infineon	1	IGBT Trench Field Stop 600 V 12 A 100 W Surface Mount PG-TO252-3	Other	IKD06N60RATMA1	3D model not available Symbol and footprint available 2	1 Download Model
	IHW30N160R5XKSA1 Infineon	1	INFINEON - IHW30N160R5XKSA1 - IGBT, 1.6KV, 60A, 175DEG C, 263W	Transistor Outline, Vertical	IHW30N160R5XKSA1	3D model available Symbol and footprint available 3	1 Download Model

	IXYX100N120B3 LITTELFUSE	1	IXYS IXYX100N120B3, IGBT Transistor, 225 A 1200 V, 30kHz, 3-Pin PLUS247	Transistor Outline, Vertical	IXYX100N120B3	3D model available Symbol and footprint available 3	1 Download Model
	FGA5065ADF onsemi	1	Obsolete - IGBT, 1000V, NPT Trench	Transistor Outline, Vertical	FGA5065ADF	3D model available Symbol and footprint available 3	1 Download Model
	STGWA30H65DFB2 STMicroelectronics	1	Trench gate field-stop, 650 V, 30 A, high-speed HB2 series IGBT in a TO-247 long leads package	Transistor Outline, Vertical	STGWA30H65DFB2	3D model available Symbol and footprint available 3	1 Download Model
	NGTB40N120FL2WG onsemi	1	Extremely Efficient Trench with Field Stop Technology; TJmax = 175°C; Soft Fast Reverse Recovery Diode; Optimized for High Speed Switching; 10 µs Short Circuit Capability	Transistor Outline, Vertical	NGTB40N120FL2WG	3D model available Symbol and footprint available 3	1 Download Model
	GT30J122A Toshiba	1	600 V/30 A IGBT, TO-3P(N)	Other	GT30J122A	3D model available Symbol and footprint available 3	1 Download Model
	STGP19NC60SD STMicroelectronics	1	20 A, 600 V fast IGBT with Ultrafast diode	Transistor Outline, Vertical	STGP19NC60SD	3D model available Symbol and footprint available 3	1 Download Model
	RJH60D6DPK-00#T0 Renesas Electronics	1	Support is limited to customers who have already adopted these products.IGBT product series for Power Factor Correction (PFC), UPS, solar power generation, and welding applications, recommended for 50 to 100 kHz frequencies, and not guaranteed against short circuit.	Transistor Outline, Vertical	RJH60D6DPK-00#T0	3D model available Symbol and footprint available 3	1 Download Model
	STGF20H65DFB2 STMicroelectronics	1	Trench gate field-stop, 650 V, 20 A, high-speed HB2 series IGBT in a TO‑220FP package	Transistor Outline, Vertical	STGF20H65DFB2	3D model available Symbol and footprint available 3	1 Download Model
	NGTB30N120FL2WG onsemi	1	Obsolete - IGBT 1200V 30A FS1 Induction Heating	Transistor Outline, Vertical	NGTB30N120FL2WG	3D model available Symbol and footprint available 3	1 Download Model
	STGW30H60DFB STMicroelectronics	1	STMicroelectronics STGW30H60DFB, IGBT Transistor, 60 A 600 V, 3-Pin TO-247	Transistor Outline, Vertical	STGW30H60DFB	3D model available Symbol and footprint available 3	1 Download Model
	FGP3040G2-F085 onsemi	1	SCIS Energy = 300mJ at TJ = 25°C; Logic Level Gate Drive; Qualified to AEC Q101; RoHS Compliant	Transistor Outline, Vertical	FGP3040G2-F085	3D model available Symbol and footprint available 3	1 Download Model

	STGP3NC120HD STMicroelectronics	1	7 A, 1200 V very fast IGBT with ultra-fast diode	Transistor Outline, Vertical	STGP3NC120HD	3D model available Symbol and footprint available 3	1 Download Model
	STGWA35IH135DF2 STMicroelectronics	1	Trench gate field-stop 1350 V, 35 A, soft-switching IH2 series IGBT in a TO-247 long leads package	Transistor Outline, Vertical	STGWA35IH135DF2	3D model available Symbol and footprint available 3	1 Download Model
	GT50N322A Toshiba	1	Pb-F IGBT / TRANSISTOR TO-3PN Ic=50A Vces=600V	Transistor Outline, Vertical	GT50N322A	3D model available Symbol and footprint available 3	1 Download Model
	GT50NR21 Toshiba	1	(1) 6.5th generation(2) The RC-IGBT consists of a freewheeling diode monolithically integrated in an IGBT chip.(3) Enhancement mode(4) High-speed switching IGBT : tf = 0.20 µs (typ.) (IC = 50 A) FWD : trr = 0.50 µs (typ.) (IF = 15 A)(5) Low saturation voltage : VCE(sat) = 1.8 V (typ.) (IC = 50 A)(6) High junction temperature : Tj = 175 (max)	Transistor Outline, Vertical	GT50NR21	3D model available Symbol and footprint available 3	1 Download Model
	NGTB60N60SWG onsemi	1	Obsolete - IGBT, 650V 60A Field Stop 2 IGBT	Transistor Outline, Vertical	NGTB60N60SWG	3D model available Symbol and footprint available 3	1 Download Model
	STGF5H60DF STMicroelectronics	1	STMicroelectronics STGF5H60DF, IGBT Transistor, 5 A 600 V, 3-Pin TO-220FP	Transistor Outline, Vertical	STGF5H60DF	3D model available Symbol and footprint available 3	1 Download Model
	NGTB40N135IHRWG onsemi	1	Obsolete - IGBT, 600V 40A Solar/UPS	Transistor Outline, Vertical	NGTB40N135IHRWG	3D model available Symbol and footprint available 3	1 Download Model
	FGA60N60UFDTU onsemi	1	IGBT, General Purpose, 120 A, 1.9 V, 298 W, 600 V, TO-3PN, 3 Pins	Transistor Outline, Vertical	FGA60N60UFDTU	3D model available Symbol and footprint available 3	1 Download Model
	FGA40T65SHD onsemi	1	Maximum Junction Temperature : TJ =175°C; Low Saturation Voltage: VCE(sat) =1.6 V(Typ.) @ IC = 40 A; Positive Temperature Co-efficient for Easy Parallel Operating; 100% of the Parts Tested for ILM(1); High Current Capability; Tighten Parameter Distribution; Fast Switching; RoHS Compliant; High Input Impedance	Transistor Outline, Vertical	FGA40T65SHD	3D model available Symbol and footprint available 3	1 Download Model
	STGWT80H65DFB STMicroelectronics	1	STMicroelectronics STGWT80H65DFB, IGBT Transistor, 120 A 650 V, 1MHz, 3-Pin TO-3P	Transistor Outline, Vertical	STGWT80H65DFB	3D model available Symbol and footprint available 3	1 Download Model
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