MJ-E1 Footprint, Symbol and 3D Model search results

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Image	Part Number	D.S	Description	Package Category	Prices / Stock	Model	Action
	MJ-E105H STANDEXMEDER	1	Reed Relay 5VDC 110Ohm 0.5ADC/0.5AAC SPST-NO(10.16x4.67x4.52)mm SMD High Density	Other	MJ-E105H	3D model available Symbol and footprint available 3	1 Download Model
	MJE13005 Multicomp Pro	1	Power Transistor	Transistor Outline, Vertical	MJE13005	3D model available Symbol and footprint available 3	1 Download Model
	MJE18008G onsemi	1	Two Package Choices: Standard TO-220 or Isolated TO-220; Improved Efficiency Due to Low Base Drive Requirements: - High and Flat DC Current Gain hFE - Fast Switching - No Coil Required in Base Circuit for Turn-Off (No Current Tail); Tight Parametric Distributions are Consistent Lot-to-Lot; MJF18008, Case 221D, is UL Recognized at 3500 VRMS: File #E69369; Pb-Free Packages are Available	Transistor Outline, Vertical	MJE18008G	3D model available Symbol and footprint available 3	1 Download Model
	MJE15034G onsemi	1	Pb-Free Packages are Available	Transistor Outline, Vertical	MJE15034G	3D model available Symbol and footprint available 3	1 Download Model

	MJE15033G onsemi	1	Collector-Emitter Sustaining Voltage VCEO(sus) = 250 Vdc (Min) MJE15032, MJE15033; High Current Gain Bandwidth Product fT = 30 MHz (Min) @ IC = 500 mAdc; DC Current Gain Specified to 5.0 Amperes hFE = 50 (Min) @ IC = 0.5 Adc hFE = 10 (Min) @ IC = 2.0 Adc; TO-220AB Compact Package; Pb-Free Packages are Available*	Transistor Outline, Vertical	MJE15033G	3D model available Symbol and footprint available 3	1 Download Model
	MJE15030G onsemi	1	DC Current Gain Specified to 4.0 Amperes hFE = 40 (Min) @ IC = 3.0 Adc hFE = 20 (Min) @ IC = 4.0 Adc; TO-220AB Compact Package; Collector-Emitter Sustaining Voltage - VCEO(sus) = 120 Vdc (Min) MJE15028, MJE15029 VCEO(sus) = 150 Vdc (Min) - MJE15030, MJE15031; High Current Gain - Bandwidth Product fT = 30 MHz (Min) @ IC = 500 mAdc; Pb-Free Packages are Available	Transistor Outline, Vertical	MJE15030G	3D model available Symbol and footprint available 3	1 Download Model
	MJE13001-TP MCC	1	Bipolar Transistors - BJT	Other	MJE13001-TP	3D model available Symbol and footprint available 3	1 Download Model
	MJE13007 MOSPEC	1	Bipolar Junction Transistor, NPN Type, TO-220AB	Transistor Outline, Vertical	MJE13007	3D model available Symbol and footprint available 3	1 Download Model
	MJE15030 onsemi	1	Obsolete - Bipolar Transistor, PNP, 150 V, 8.0 A	Transistor Outline, Vertical	MJE15030	3D model available Symbol and footprint available 3	1 Download Model
	MJE15035G onsemi	1	Pb-Free Packages are Available	Transistor Outline, Vertical	MJE15035G	3D model available Symbol and footprint available 3	1 Download Model
	MJE15033 onsemi	1	Obsolete - Bipolar Transistor, NPN, 350 V, 4.0 A	Transistor Outline, Vertical	MJE15033	3D model available Symbol and footprint available 3	1 Download Model
	MJE15030 Multicomp Pro	1	Bipolar (BJT) Single Transistor, General Purpose, NPN, 150 V, 8 A, 50 W, TO-220, Through Hole	Transistor Outline, Vertical	MJE15030	3D model available Symbol and footprint available 3	1 Download Model
	MJE15031 Multicomp Pro	1	TRANSISTOR, PNP, TO-220	Transistor Outline, Vertical	MJE15031	3D model available Symbol and footprint available 3	1 Download Model
	MJE171G onsemi	1	Annular Construction for Low Leakages - ICBO = 100 nA (Max) @ Rated VCB; DC Current Gain - hFE = 30 (Min) @ IC = 0.5 Adc hFE = 12 (Min) @ IC = 1.5 Adc; Current-Gain - Bandwidth Product - fT = 50 MHz (Min) @ IC = 100 mAdc; Collector-Emitter Sustaining Voltage - VCEO(sus) = 60 Vdc - MJE171, MJE181 VCEO(sus) = 80 Vdc - MJE172, MJE182; Pb-Free Packages are Available	Other	MJE171G	3D model available Symbol and footprint available 3	1 Download Model
	MJE181G onsemi	1	Annular Construction for Low Leakages - ICBO = 100 nA (Max) @ Rated VCB; DC Current Gain - hFE = 30 (Min) @ IC = 0.5 Adc hFE = 12 (Min) @ IC = 1.5 Adc; Current-Gain - Bandwidth Product - fT = 50 MHz (Min) @ IC = 100 mAdc; Collector-Emitter Sustaining Voltage - VCEO(sus) = 60 Vdc - MJE171, MJE181 VCEO(sus) = 80 Vdc - MJE172, MJE182; Pb-Free Packages are Available	Other	MJE181G	3D model available Symbol and footprint available 3	1 Download Model

	MJE172 STMicroelectronics	1	Bipolar (BJT) Transistor NPN 80 V 3 A 50MHz 12.5 W Through Hole SOT-32-3,-65 to 150°C	Other	MJE172	3D model available Symbol and footprint available 3	1 Download Model
	MJE15032 onsemi	1	Bipolar Transistor, NPN, 250 V, 8.0 A	Transistor Outline, Vertical	MJE15032	3D model available Symbol and footprint available 3	1 Download Model
	MJE170G onsemi	1	Annular Construction for Low Leakages - ICBO = 100 nA (Max) @ Rated VCB; DC Current Gain - hFE = 30 (Min) @ IC = 0.5 Adc hFE = 12 (Min) @ IC = 1.5 Adc; Current-Gain - Bandwidth Product - fT = 50 MHz (Min) @ IC = 100 mAdc; Collector-Emitter Sustaining Voltage - VCEO(sus) = 60 Vdc - MJE171, MJE181 VCEO(sus) = 80 Vdc - MJE172, MJE182; Pb-Free Packages are Available	Transistor Outline, Vertical	MJE170G	3D model available Symbol and footprint available 3	1 Download Model
	MJE15028G onsemi	1	DC Current Gain Specified to 4.0 Amperes hFE = 40 (Min) @ IC = 3.0 Adc hFE = 20 (Min) @ IC = 4.0 Adc; TO-220AB Compact Package; Collector-Emitter Sustaining Voltage - VCEO(sus) = 120 Vdc (Min) MJE15028, MJE15029 VCEO(sus) = 150 Vdc (Min) - MJE15030, MJE15031; High Current Gain - Bandwidth Product fT = 30 MHz (Min) @ IC = 500 mAdc; Pb-Free Packages are Available	Transistor Outline, Vertical	MJE15028G	3D model available Symbol and footprint available 3	1 Download Model
	MJE15032 Motorola	1	Complimentary, Silicon Power Transistor, NPN	Transistor Outline, Vertical	MJE15032	3D model available Symbol and footprint available 3	1 Download Model
	MJE13005 Central Semiconductor	1	Bipolar Transistors - BJT NPN Fast SW	Transistor Outline, Vertical	MJE13005	3D model available Symbol and footprint available 3	1 Download Model
	MJE18004G onsemi	1	Two Package Choices: Standard TO-220 or isolated TO-220; Motorola "6 SIGMA" Philosophy Provides Tight and Reproducible Parametric Distributions; Full Characterization at 125°C; Improved Efficiency Due to Low Base Drive Requirements: - High and Flat DC Current Gain h FE - Fast Switching - No Coil Required in Base Circuit for Turn-Off (No Current Tail); MJF18004, Case 221D, is UL Registered at 3500 VRMS: File #E69369; Pb-Free Packages are Available	Transistor Outline, Vertical	MJE18004G	3D model available Symbol and footprint available 3	1 Download Model
	MJE13007G onsemi	1	VCEO(sus) 400 V; MJF13007 is UL Recognized to 3500 VRMS, File #E69369; SOA and Switching Applications Information; 700 V Blocking Capability; Two Package Choices: Standard TO-220 or Isolated TO-220; Reverse Bias SOA with Inductive Loads @ TC = 100°C; Pb-Free Package is Available	Transistor Outline, Vertical	MJE13007G	3D model available Symbol and footprint available 3	1 Download Model
	MJE13003F5 Foshan Blue Rocket Elec	1	Transistors NPN 800mA 400V TO-126(R) RoHS	Transistor Outline, Vertical	MJE13003F5	3D model available Symbol and footprint available 3	1 Download Model
	MJE182G onsemi	1	Annular Construction for Low Leakages - ICBO = 100 nA (Max) @ Rated VCB; DC Current Gain - hFE = 30 (Min) @ IC = 0.5 Adc hFE = 12 (Min) @ IC = 1.5 Adc; Current-Gain - Bandwidth Product - fT = 50 MHz (Min) @ IC = 100 mAdc; Collector-Emitter Sustaining Voltage - VCEO(sus) = 60 Vdc - MJE171, MJE181 VCEO(sus) = 80 Vdc - MJE172, MJE182; Pb-Free Packages are Available	Transistor Outline, Vertical	MJE182G	3D model available Symbol and footprint available 3	1 Download Model
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