N120B Footprint, Symbol and 3D Model search results

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Image	Part Number	D.S	Description	Package Category	Prices / Stock	Model	Action
	IKW15N120BH6XKSA1 Infineon	1	IGBT Transistors INDUSTRY 14	Transistor Outline, Vertical	IKW15N120BH6XKSA1	3D model available Symbol and footprint available 3	1 Download Model
	IXYX100N120B3 LITTELFUSE	1	IXYS IXYX100N120B3, IGBT Transistor, 225 A 1200 V, 30kHz, 3-Pin PLUS247	Transistor Outline, Vertical	IXYX100N120B3	3D model available Symbol and footprint available 3	1 Download Model
	R1154N120B-TR-FE Nisshinbo	1	Low Supply Current 24V Input 150mA Voltage Regulator	SOT23 (5-Pin)	R1154N120B-TR-FE	3D model available Symbol and footprint available 3	1 Download Model
	BLE32SN120BN1L Murata Electronics	1	FB SMD 1210inch 12ohm NONAUTO	Ferrite Bead Chip	BLE32SN120BN1L	3D model available Symbol and footprint available 3	1 Download Model

	IXYA20N120B4HV LITTELFUSE	1	IGBT Transistors 4TH GENERATION (GENX4)TRENCH	Other	IXYA20N120B4HV	3D model available Symbol and footprint available 3	1 Download Model
	IXGT30N120B3D1 LITTELFUSE	1	IXYS IXGT30N120B3D1, 50 A 1200 V, 3-Pin TO-268	Other	IXGT30N120B3D1	3D model available Symbol and footprint available 3	1 Download Model
	HGTD1N120BNS onsemi	1	5.3A, 1200V, NPT Series N-Channel IGBT	Other	HGTD1N120BNS	3D model not available Symbol and footprint available 2	1 Download Model
	IXYH55N120B4H1 LITTELFUSE	1	1200 V, 55 A XPTTM Gen4 IGBT with Sonic Diode	Transistor Outline, Vertical	IXYH55N120B4H1	3D model available Symbol and footprint available 3	1 Download Model
	HGTG10N120BND onsemi	1	Obsolete - 600V, SMPS IGBT	Transistor Outline, Vertical	HGTG10N120BND	3D model available Symbol and footprint available 3	1 Download Model
	HGT1S10N120BNST onsemi	1	Low Saturation Voltage : V CE(sat) = 2.45 V @ I C = 10A; Typical Fall Time. . . . . . . . . .140ns at TJ = 150°C; Low Conduction Loss; 17A, 1200V, TC = 110°C; Short Circuit Rating	Other	HGT1S10N120BNST	3D model available Symbol and footprint available 3	1 Download Model
	HGTG18N120BND onsemi	1	Obsolete - IGBT, 600V, SMPS	Transistor Outline, Vertical	HGTG18N120BND	3D model available Symbol and footprint available 3	1 Download Model
	HGTP10N120BN onsemi	1	17A, 1200V, TC = 110°C; Low Conduction Loss; Short Circuit Rating; Low saturation voltage: VCE(sat) = 2.45V @ IC = 10A; Typical Fall Time. . . . . . . . . .140ns at TJ= 150°C	Transistor Outline, Vertical	HGTP10N120BN	3D model available Symbol and footprint available 3	1 Download Model
	IXYK120N120B3 LITTELFUSE	1	DISC IGBT XPT-GENX3 TO-264(3)	Transistor Outline, Vertical	IXYK120N120B3	3D model available Symbol and footprint available 3	1 Download Model
	RS6N120BHTB1 ROHM Semiconductor	1	MOSFET Nch 80V 135A, HSOP8, Power MOSFET: RS6N120BH is a power MOSFET with low-on resistance and high power package, suitable for switching.	Other	RS6N120BHTB1	3D model available Symbol and footprint available 3	1 Download Model
	IXYH40N120B4H1 LITTELFUSE	1	1200 V, 40 A XPTTM Gen4 IGBT with Sonic Diode Extreme Light Punch Through IGBT for 5– 30 kHz Switching	Transistor Outline, Vertical	IXYH40N120B4H1	3D model available Symbol and footprint available 3	1 Download Model

	IXGK120N120B3 LITTELFUSE	1	DISC IGBT PT-MID FREQUENCY TO-264(3) / TUBE	Transistor Outline, Vertical	IXGK120N120B3	3D model available Symbol and footprint available 3	1 Download Model
	BLE32SN120BH1L Murata Electronics	1	FB SMD 1210inch 12ohm POWRTRN	Other	BLE32SN120BH1L	3D model available Symbol and footprint available 3	1 Download Model
	IXYK110N120B4 LITTELFUSE	1	IGBT 1200 V 340 A 1360 W Through Hole TO-264 (IXYK)	Transistor Outline, Vertical	IXYK110N120B4	3D model available Symbol and footprint available 3	1 Download Model
	MIW80N120BT1YHE3-BP MCC	1	Trench and Field Stop IGBT 1200V 80ATO-247AB PACKAGE	Transistor Outline, Vertical	MIW80N120BT1YHE3-BP	3D model available Symbol and footprint available 3	1 Download Model
	MIWP75N120-BP MCC	1	Trench andField StopIGBT1200V 75A	Transistor Outline, Vertical	MIWP75N120-BP	3D model available Symbol and footprint available 3	1 Download Model
	HGTD1N120BNS9A onsemi	1	Low saturation voltage: VCE(sat) = 2.5V @ IC = 1.0A; Typical Fall Time...................258ns at TJ = 150°C; Low Conduction Loss; Short Circuit Rating; 2.7A, 1200V at TC = 110°C	Other	HGTD1N120BNS9A	3D model available Symbol and footprint available 3	1 Download Model
	HGTG5N120BND onsemi	1	Low Saturation Voltage : V CE(sat) = 2.45 V @ I C = 5A; Low Conduction Loss; Short Circuit Rating; 10A, 1200V, TC = 110°C; Typical Fall Time. . . . . . . . . . . . . . . . 175ns at TJ = 150°C	Transistor Outline, Vertical	HGTG5N120BND	3D model available Symbol and footprint available 3	1 Download Model
	N120BA3-24.000MHZ MMD	1	Parallel - 3Rd Overtone Quartz Crystal, 24MHz Nom		N120BA3-24.000MHZ	3D model not available Symbol and footprint not available 0	0 Build or Request
	N120BC1-6.000MHZ MMD	1	Parallel - Fundamental Quartz Crystal, 6MHz Nom		N120BC1-6.000MHZ	3D model not available Symbol and footprint not available 0	0 Build or Request
	N120BA1-5.999MHZ-T MMD	1	Parallel - Fundamental Quartz Crystal, 5.999MHz Nom		N120BA1-5.999MHZ-T	3D model not available Symbol and footprint not available 0	0 Build or Request
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