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Image Part Number D.S Description Package Category Prices / Stock Model Action
Image Part Number D.S Description Package Category Prices / Stock Model Action
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FDMS8622 onsemi
1 High power and current handling capability in a widely used surface mount package ; 100% UIL Tested ; High performance trench technology for extremely low rDS(on) ; Termination is Lead-free and RoHS Compliant ; Max rDS(on) = 88 mΩ at VGS = 6 V, ID = 3.9 A ; Max rDS(on) = 56 mΩ at VGS = 10 V, ID = 4.8 A Other FDMS8622 1 Download Model
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FDS86242 onsemi
1 100% UIL Tested; Max rDS(on) = 67 mΩ at VGS = 10 V, ID = 4.1 A; High performance trench technology for extremely low rDS(on); Max rDS(on) = 98mΩ at VGS = 6 V, ID = 3.3 A; RoHS Compliant; High power and current handling capability in a widely usedsurface mount package Small Outline Packages FDS86242 1 Download Model
Part Image Part Image 1 Chip Varistors / Ceramic Transient Voltage Suppressors, Maximum continuous voltage=16V, Maximum Clamping Voltage (8/20μs)=40V Varistors Chip B72530G1140S862 1 Download Model
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TS862AIPT STMicroelectronics
1 ■ Ultra low current consumption (6 µA/comp.at VCC = 2.7 V)■ Rail-to-rail CMOS inputs■ Push-pull outputs■ Supply operation from 2.7 to 10 V■ Low propagation delay■ ESD protection (2 kV)■ Latch-up immunity (class A)TSSOP8 Small Outline Packages TS862AIPT 1 Download Model
Part Image Part Image 1 N-Channel Shielded Gate PowerTrench® MOSFET 150V, 12A, 56mΩ Other FDMS86252L 1 Download Model
Part Image Part Image 1 Shielded Gate MOSFET Technology; Max rDS(on) = 25 mΩ at VGS = 10 V, ID = 6.7 A; Max rDS(on) = 33 mΩ at VGS = 6 V, ID = 5.8 A; Advanced package and silicon combinatory for low rDS(on) and high efficiency; MSL1 robust package design; 100% UIL tested; RoHS Compliant Other FDMS86250 1 Download Model
Part Image Part Image 1 N-Channel 60-V (D-S) MOSFET PowerPAK 121 Other SIS862ADN-T1-GE3 1 Download Model
Part Image Part Image 1 MOSFET 60V Vds 20V Vgs PowerPAK 1212-8 Other SIS862DN-T1-GE3 1 Download Model
Part Image Part Image 1 Safety System Basis Chip For Domain Controller, pre-prog, Fit For ASIL D , 100 pF , 1.5 kΩ , -40°C ~ 125°C Other MFS8620BMDA8ES 1 Download Model
Part Image Part Image 1 Next generation enhanced body diode technology, engineered for soft recovery ; Max rDS(on) = 15.5 mΩ at VGS = 6 V, ID = 8 A ; Advanced Package and Silicon combination for low rDS(on) and high efficiency ; Shielded Gate MOSFET Technology ; RoHS Compliant ; 100% UIL tested ; Max rDS(on) = 12.4 mΩ at VGS = 10 V, ID = 10 A ; MSL1 robust package design Other FDMS86255 1 Download Model
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TS862IYDT STMicroelectronics
1 Rail-to-rail micropower BiCMOS comparators Small Outline Packages TS862IYDT 1 Download Model
Part Image Part Image 1 Chip Varistors / Ceramic Transient Voltage Suppressors, Maximum continuous voltage=16V, Maximum Clamping Voltage (8/20μs)=40V Varistors Chip B72520G1140S862 1 Download Model
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TS862IPT STMicroelectronics
1 Rail-to-rail micropower BiCMOS dual comparator Small Outline Packages TS862IPT 1 Download Model
Part Image Part Image 1 RoHS Compliant ; 100% UIL tested ; Advanced Package and Silicon combination for low rDS(on)and high efficiency ; Max rDS(on) = 11.5 mΩ at VGS = 10 V, ID = 11.6 A ; Max rDS(on) = 14.5 mΩ at VGS = 6 V, ID = 10.7 A ; MSL1 robust package design ; Shielded Gate MOSFET Technology Other FDMS86201 1 Download Model
Part Image Part Image 1 RoHS Compliant ; Max rDS(on) = 25 mΩ at VGS = 6 V, ID = 7.8 A ; High performance technology for extremely low rDS(on) ; 100% UIL tested ; Shielded Gate MOSFET Technology ; Max rDS(on) = 17 mΩ at VGS = 10 V, ID = 9.3 A ; Dual Cool™ Top Side Cooling PQFN package Other FDMS86200DC 1 Download Model
Part Image Part Image 1 Max rDS(on) = 290 mΩ at VGS = -6 V, ID = -2 A ; RoHS Compliant ; This Product is Optimised for Fast Switching Applications as well as Load Switch Applications ; Very Low rDS(on) Mid Voltage P-channel Silicon Technology Optimised for Low Qg; Max rDS(on) = 255 mΩ at VGS = -10 V, ID = -2.2 A ; Shielded Gate MOSFET Technology ; 100% UIL Tested Small Outline Packages FDS86267P 1 Download Model
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FDS86240 onsemi
1 RoHS Compliant; 100% UIL Tested; Max rDS(on) = 19.8 mΩ at VGS = 10 V, ID = 7.5 A; High Power and Current Handling Capability in a Widely Used Surface Mount Package; Max rDS(on) = 26 mΩ at VGS = 6 V, ID = 6.4 A; High Performance Trench Technology for Extremely Low rDS(on) Small Outline Packages FDS86240 1 Download Model
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TS862IYD STMicroelectronics
1 Rail-to-rail micropower BiCMOS comparators Small Outline Packages TS862IYD 1 Download Model
Part Image Part Image 1 MSL1 robust package design ; 100% UIL tested ; Advanced Package and Silicon combination for low rDS(on) and high efficiency ; Max rDS(on) = 51 mΩ at VGS = 10 V, ID = 4.6 A ; RoHS Compliant ; Max rDS(on) = 70 mΩ at VGS = 6 V, ID = 3.9 A ; Shielded Gate MOSFET Technology Other FDMS86252 1 Download Model
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FDS86252 onsemi
1 Max rDS(on) = 80 mΩ at VGS = 6 V, ID = 3.7 A; 100% UIL Tested; High power and current handling capability in a widely used surface mount package; Max rDS(on) = 55 mΩ at VGS = 10 V, ID = 4.5 A; High performance trench technology for extremely low rDS(on); RoHS Compliant Small Outline Packages FDS86252 1 Download Model
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TS862IDT STMicroelectronics
1 Rail-to-rail micropower BiCMOS dual comparator Small Outline Packages TS862IDT 1 Download Model
Part Image Part Image 0 FET 150V 18.0 MOHM PQFN56 Other FDMS86200E 1 Download Model
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TS862AIDT STMicroelectronics
1 Rail-to-rail micropower BiCMOS comparators Small Outline Packages TS862AIDT 1 Download Model
Part Image Part Image 1 Max rDS(on)= 7.2 mΩ at VGS = 10 V, ID= 13.5 A ; 100% UIL tested ; RoHS Compliant ; Shielded Gate MOSFET Technology ; MSL1 robust package design ; Advanced Package and Silicon combination for low rDS(on) and high efficiency ; Max rDS(on)= 10.3 mΩ at VGS = 6 V, ID= 11.5 A Other FDMS86202 1 Download Model
Part Image Part Image 1 100% UIL tested ; RoHS Compliant ; MSL1 robust package design ; Advanced Package and Silicon combination for low rDS(on) and high efficiency ; Max rDS(on) = 21 mΩ at VGS = 6 V, ID = 8.8 A ; Shielded Gate MOSFET Technology ; Max rDS(on) = 18 mΩ at VGS = 10 V, ID = 9.6 A Other FDMS86200 1 Download Model
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