FDMS8 Model Download Search Results
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FDMS8050
onsemi
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1 | Ultra Low RDS(on); RoHS Compliant ; Optimized for Low Gate Charge; Advanced Power 5x6mm package; 100% UIL tested | Other | FDMS8050 |
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FDMS86568-F085
onsemi
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1 | N-Channel PowerTrench® 60V, 80A, 3.5mΩ | Other | FDMS86568-F085 |
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FDMS86201
onsemi
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1 | RoHS Compliant ; 100% UIL tested ; Advanced Package and Silicon combination for low rDS(on)and high efficiency ; Max rDS(on) = 11.5 mΩ at VGS = 10 V, ID = 11.6 A ; Max rDS(on) = 14.5 mΩ at VGS = 6 V, ID = 10.7 A ; MSL1 robust package design ; Shielded Gate MOSFET Technology | Other | FDMS86201 |
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FDMS86105
onsemi
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1 | 100% UIL tested; Advanced package and silicon combination for low rDS(on) and high efficiency; Max rDS(on) = 54 mΩ at VGS = 6 V, ID = 4.5 A; Max rDS(on) = 34 mΩ at VGS = 10 V, ID = 6 A; MSL1 robust package design; RoHS Compliant; Shielded Gate MOSFET Technology | Other | FDMS86105 |
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FDMS86101DC
onsemi
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1 | Max rDS(on) = 7.5 mΩ at VGS = 10 V, ID = 14.5 A ; Dual Cool™ Top Side Cooling PQFN package ; 100% UIL Tested ; Shielded Gate MOSFET Technology ; Max rDS(on) = 12 mΩ at VGS = 6 V, ID = 11.5 A ; RoHS Compliant ; High performance technology for extremely low rDS(on) | Other | FDMS86101DC |
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FDMS86500DC
onsemi
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1 | Dual Cool™ Top Side Cooling PQFN package; Max rDS(on) = 2.3 mΩ at VGS(on) = 10 V, ID = 29 A; Max rDS(on) = 3.3 mΩ at VGS(on) = 8 V, ID = 24 A; High performance technology for extremely low rDS(on); 100% UIL Tested; RoHS Compliant | Other | FDMS86500DC |
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FDMS86181
onsemi
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1 | Max rDS(on) = 4.2 mΩ at VGS = 10 V, ID = 44 A ; RoHS Compliant ; Lowers switching noise/EMI ; 50% lower Qrr than other MOSFET suppliers ; ADD ; 100% UIL tested ; MSL1 robust package design ; Max rDS(on) = 12 mΩ at VGS = 6 V, ID = 22 A ; Shielded Gate MOSFET Technology | Other | FDMS86181 |
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FDMS86102LZ
onsemi
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1 | Max rDS(on) = 37 mΩ at VGS = 4.5 V, ID = 5.8 A; 100% UIL Tested ; HBM ESD protection level > 6 KV typical (Note 4); RoHS Compliant; Max rDS(on) = 25 mΩ at VGS = 10 V, ID = 7 A | Other | FDMS86102LZ |
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FDMS86163P
onsemi
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1 | Very low RDS(on) mid voltage P-channel silicon technology optimised for low Qg; Max rDS(on) = 22 mΩ at VGS = -10 V, ID = -7.9 A ; This product is optimised for fast switching applications as well as load switch applications ; 100% UIL tested ; RoHS Compliant ; Max rDS(on) = 30 mΩ at VGS = -6 V, ID = -5.9 A | Other | FDMS86163P |
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FDMS86350
onsemi
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1 | Advanced Package and Silicon combination for low rDS(on) and high efficiency ; MSL1 robust package design ; Max rDS(on) = 3.2 mΩ at VGS = 8 V, ID = 22 A ; 100% UIL tested ; RoHS Compliant ; Max rDS(on) = 2.4 mΩ at VGS = 10 V, ID = 25 A | Other | FDMS86350 |
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FDMS86202
onsemi
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1 | Max rDS(on)= 7.2 mΩ at VGS = 10 V, ID= 13.5 A ; 100% UIL tested ; RoHS Compliant ; Shielded Gate MOSFET Technology ; MSL1 robust package design ; Advanced Package and Silicon combination for low rDS(on) and high efficiency ; Max rDS(on)= 10.3 mΩ at VGS = 6 V, ID= 11.5 A | Other | FDMS86202 |
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FDMS86263P
onsemi
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1 | 100% UIL tested ; This product is optimised for fast switching applications as well as load switch applications ; RoHS Compliant ; Max rDS(on) = 53 mΩ at VGS = -10 V, ID = -4.4 A ; Very low Rds-on in Mid-Voltage P-Channel silicon technology optimized for low Qg ; Max rDS(on) = 64 mΩ at VGS = -6 V, ID = -4 A | Other | FDMS86263P |
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FDMS86200
onsemi
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1 | 100% UIL tested ; RoHS Compliant ; MSL1 robust package design ; Advanced Package and Silicon combination for low rDS(on) and high efficiency ; Max rDS(on) = 21 mΩ at VGS = 6 V, ID = 8.8 A ; Shielded Gate MOSFET Technology ; Max rDS(on) = 18 mΩ at VGS = 10 V, ID = 9.6 A | Other | FDMS86200 |
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FDMS86520L
onsemi
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1 | Max rDS(on) = 11.7 mΩat VGS = 4.5 V, ID = 11.5 A; Max rDS(on) = 8.2 mΩ at VGS = 10 V, ID = 13.5 A; 100% UIL tested; MSL1 robust package design; Advanced package and silicon combination for low rDS(on) and high efficiency; RoHS Compliant | Other | FDMS86520L |
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FDMS86183
onsemi
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1 | Max rDS(on) = 34.6 mΩ at VGS = 6 V, ID = 8 A ; MSL1 Robust Package Design ; Lowers Switching Noise/EMI ; Shielded Gate MOSFET Technology ; 100% UIL Tested ; RoHS Compliant ; Max rDS(on) = 12.8 mΩ at VGS = 10 V, ID = 16 A ; 50% Lower Qrr than Other MOSFET Suppliers | Other | FDMS86183 |
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FDMS8622
onsemi
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1 | High power and current handling capability in a widely used surface mount package ; 100% UIL Tested ; High performance trench technology for extremely low rDS(on) ; Termination is Lead-free and RoHS Compliant ; Max rDS(on) = 88 mΩ at VGS = 6 V, ID = 3.9 A ; Max rDS(on) = 56 mΩ at VGS = 10 V, ID = 4.8 A | Other | FDMS8622 |
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FDMS8090
onsemi
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1 | RoHS Compliant ; Max rDS(on) = 20 mΩ at VGS = 6 V, ID = 8 A ; Max rDS(on) = 13 mΩ at VGS = 10 V, ID = 10 A ; Low inductance packaging shortens rise/fall times, resulting in lower switching losses ; 100% UIL tested ; MOSFET integration enables optimum layout for lower circuit inductance and reduced switch node ringing | Other | FDMS8090 |
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FDMS86101A
onsemi
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1 | MSL1 robust package design ; 100% Rg tested; Max rDS(on) = 13.5 mΩ at VGS = 6 V, ID = 9.5 A ; Advanced Package and Silicon combination for low rDS(on) and high efficiency ; 100% UIL tested ; RoHS Compliant ; Max rDS(on) = 8 mΩ at VGS = 10 V, ID = 13 A ; Shielded Gate MOSFET Technology | Other | FDMS86101A |
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FDMS86252L
onsemi
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1 | N-Channel Shielded Gate PowerTrench® MOSFET 150V, 12A, 56mΩ | Other | FDMS86252L |
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FDMS86180
onsemi
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1 | 50% Lower Qrr than Other MOSFET Suppliers; 100% UIL Tested ; Shielded Gate MOSFET Technology ; Max rDS(on) = 3.2 mΩ at VGS = 10 V, ID = 67 A ; MSL1 Robust Package Design ; Max rDS(on) = 7.9 mΩ at VGS = 6 V, ID = 33 A ; RoHS Compliant ; Lowers Switching Noise/EMI | Other | FDMS86180 |
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FDMS86250
onsemi
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1 | Shielded Gate MOSFET Technology; Max rDS(on) = 25 mΩ at VGS = 10 V, ID = 6.7 A; Max rDS(on) = 33 mΩ at VGS = 6 V, ID = 5.8 A; Advanced package and silicon combinatory for low rDS(on) and high efficiency; MSL1 robust package design; 100% UIL tested; RoHS Compliant | Other | FDMS86250 |
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FDMS86540
onsemi
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1 | Max rDS(on) = 3.4 mΩ at VGS = 10 V, ID = 20 A; Max rDS(on) = 4.1 mΩ at VGS = 8 V, ID = 18.5 A; Advanced package and silicon combination for low rDS(on) and high efficiency; Next generation enhanced body diode technology, engineered for soft recovery; MSL1 robust package design; 100% UIL tested; RoHS Compliant | Other | FDMS86540 |
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FDMS86200E
onsemi
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0 | FET 150V 18.0 MOHM PQFN56 | Other | FDMS86200E |
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FDMS8023S
onsemi
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1 | Power Field-Effect Transistor, 26A I(D), 30V, 0.0024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA | FDMS8023S |
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FDMS86150ET100
Fairchild Semiconductor Corporation
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1 | Power Field-Effect Transistor | FDMS86150ET100 |
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![Part Image](["https://componentsearchengine.com/Images/9/FDMS86568-F085.jpg",null,null])
![Part Image](["https://componentsearchengine.com/Images/1/FDMS86200E.jpg",null,null])
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