IGBTs Model Download Search Results
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IXBK55N300
LITTELFUSE
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1 | IGBT Transistors | Transistor Outline, Vertical | IXBK55N300 |
3
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FGPF4536
onsemi
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1 | IGBT, 220 A 360 V, 3-Pin TO-220F, Through Hole | Transistor Outline, Vertical | FGPF4536 |
3
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AIKW20N60CTXKSA1
Infineon
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1 | IGBT Transistors DISCRETES | Transistor Outline, Vertical | AIKW20N60CTXKSA1 |
3
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BSM15GP120
Infineon
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1 | IGBT Modules 1200V 15A PIM | Other | BSM15GP120 |
2
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IHW30N110R3FKSA1
Infineon
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1 | INFINEON - IHW30N110R3FKSA1 - IGBT Single Transistor, 60 A, 1.55 V, 333 W, 1.1 kV, TO-247, 3 Pins | Transistor Outline, Vertical | IHW30N110R3FKSA1 |
3
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FP50R06W2E3_B11
Infineon
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1 | Infineon FP50R06W2E3_B11, IGBT Module, 3 Phase, 65 A max, 600 V, 35-Pin EASY2B | Other | FP50R06W2E3_B11 |
2
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IXBF32N300
LITTELFUSE
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1 | DISC IGBT BIMSFT-VERYHIVOLT I4-PAK ISO+ / TUBE | Other | IXBF32N300 |
3
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IXYT40N120A4HV
LITTELFUSE
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1 | IGBT PT 1200 V 140 A 600 W Surface Mount TO-268HV (IXYT) , 1200 V , 275 A , 600V , -55°C ~ 175°C (TJ) | Other | IXYT40N120A4HV |
3
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IKQ120N60TXKSA1
Infineon
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1 | IGBT Trench Field Stop 600 V 160 A 833 W Through Hole PG-TO247-3-46 | Transistor Outline, Vertical | IKQ120N60TXKSA1 |
3
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IXGK100N170
LITTELFUSE
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1 | Trans IGBT Chip N-CH 1700V 170A 830000mW 3-Pin(3+Tab) TO-264 | Transistor Outline, Vertical | IXGK100N170 |
3
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IKD06N60RATMA1
Infineon
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1 | IGBT Trench Field Stop 600 V 12 A 100 W Surface Mount PG-TO252-3 | Other | IKD06N60RATMA1 |
2
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IXYP50N65C3
LITTELFUSE
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1 | XPTTM 650V IGBTGenX3TM | Transistor Outline, Vertical | IXYP50N65C3 |
3
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FS75R07W2E3_B11A
Infineon
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1 | Infineon FS75R07W2E3_B11A, IGBT Module, 3 Phase, 95 A max, 650 V, 37-Pin EASY2B | Other | FS75R07W2E3_B11A |
3
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STGW38IH130D
STMicroelectronics
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1 | STMICROELECTRONICS - STGW38IH130D - IGBT, 1300V, 63A, 250W, TO247 | Transistor Outline, Vertical | STGW38IH130D |
3
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IXYP8N90C3
LITTELFUSE
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1 | Disc IGBT XPT-GenX3 TO-220AB/FP 900V,8A,3.0V,130ns ,High-Speed IGBT for 20-50 kHz Switching | Transistor Outline, Vertical | IXYP8N90C3 |
3
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CT60AM-18F#F00
Renesas Electronics
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1 | Support is limited to customers who have already adopted these products. | Transistor Outline, Vertical | CT60AM-18F#F00 |
3
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GT30J110SRA
Toshiba
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1 | 1100 V/60 A IGBT, Built-in Diodes, TO-3P(N) | Other | GT30J110SRA |
3
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FGB20N60SFD-F085
onsemi
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1 | Fast switching; Low saturation voltage: VCE(sat) = 2.2V @ IC = 20A; High current capability; High input impedance; Qualified to Automotive Requirements of AEC-Q101; RoHS complaint | Other | FGB20N60SFD-F085 |
3
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STGW75M65DF2
STMicroelectronics
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1 | Trench gate field-stop IGBT, M series 650 V, 75 A low-loss in TO-247 and TO-247 long leads packages | Transistor Outline, Vertical | STGW75M65DF2 |
3
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FGP20N60UFDTU
onsemi
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1 | Last Shipments - IGBT, 400V, 26A, 1.35V, 300mJ, TO-220EcoSPARK II, N-Channel Ignition | Transistor Outline, Vertical | FGP20N60UFDTU |
3
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STGWA30HP65FB
STMicroelectronics
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1 | Trench gate field-stop 650 V, 30 A high speed HB series IGBT | Transistor Outline, Vertical | STGWA30HP65FB |
3
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STGW40NC60KD
STMicroelectronics
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1 | 40 A - 600 V - short circuit rugged IGBT | Transistor Outline, Vertical | STGW40NC60KD |
3
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AFGY120T65SPD
onsemi
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1 | AEC Q101 qualified; Low Vcesat voltage; Tight parameter distribution; Soft recovery diode | Transistor Outline, Vertical | AFGY120T65SPD |
3
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FGH40N60SMD-F085
onsemi
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1 | Positive Temperaure Co-efficient for easy parallel operating; High input impedance; RoHS compliant; Qualified to Automotive Requirements of AEC-Q101; Low saturation voltage: VCE(sat) = 1.9V(Typ.) @ IC = 40A; Maximum Junction Temperature : TJ = 175℃; High current capability; Tightened Parameter Distribution | Transistor Outline, Vertical | FGH40N60SMD-F085 |
3
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NGTB20N135IHRWG
onsemi
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1 | Last Shipments - IGBT, N-Channel 600V, 20A, VCE(sat);1.45V TO-3PF-3L with Low VF Switching Diode | Transistor Outline, Vertical | NGTB20N135IHRWG |
3
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