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Image Part Number D.S Description Package Category Prices / Stock Model Action
Image Part Number D.S Description Package Category Prices / Stock Model Action
Part Image Part Image 1 Low RDS(on); Low QG and Capacitance Other NTMFS6D2N08XT1G 1 Download Model
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1 Power, Single, N-Channel, DFN8 5x6,, DUAL COOL, GEN2, 40 V, 0.40 mΩ, 529 A Other NTMFSCH0D4N04XMTWG 1 Download Model
Part Image Part Image 1 MOSFET T6 40V NCH LL IN SO8 Other NTMFS5C460NLT1G 1 Download Model
Part Image Part Image 1 MOSFET N-CH 60V 235A 5DFN Other NTMFS5C612NLWFT1G 1 Download Model
Part Image Part Image 1 Low RDS(on); Low input capacitance; Maximum junction temperature of 175°C; RoHS Compliant Other NTMFS5C628NLT1G 1 Download Model
Part Image Part Image 1 Low QRR, Soft Recovery Body Diode; Low RDS(on) to Minimize Conduction Losses; Low QG and Capacitance to Minimize Driver Losses; These Devices are Pb−Free, Halogen−Free/BFR−Free and are RoHS Compliant Other NTMFS2D5N08XT1G 1 Download Model
Part Image Part Image 1 Low RDS(on); Low input capacitance; RoHS Compliant Other NTMFS5H419NLT1G 1 Download Model
Part Image Part Image 1 Ultra Low RDS(on); Advanced Package Technology in 5x6mm; Pb−Free and Halogen Free/BFR Free Other NTMFS002P03P8ZT1G 1 Download Model
Part Image Part Image 1 Shielded Gate MOSFET Technology; Max rDS(on) = 6.0 mΩ at VGS = 10 V, ID = 32 A; Max rDS(on) = 14.3 mΩ at VGS = 6 V, ID = 16 A; 50% Lower Qrr than Other MOSFET Suppliers; Soft Body diode; MSL1 Robust Package Design; 100% UIL Tested; RoHS Compliant Other NTMFS006N08MC 1 Download Model
Part Image Part Image 1 Small Footprint (5x6 mm) for Compact Design; Low RDS(on) to Minimize Conduction Losses; Low QG and Capacitance to Minimize Driver Losses; RoHS Compliant Other NTMFS4C020NT1G 1 Download Model
Part Image Part Image 1 Capable of 5V (Logic Level) Drive; Small Footprint (5x6 mm); Low RDS(on); Low QG and Capacitance; RoHS Compliant Other NTMFS6H836NLT1G 1 Download Model
Part Image Part Image 1 Shielded Gate MOSFET Technology; MSL1 Robust Package Design; Low Qrr; Soft recovery body diode; Low RDS(on); Small Footprint (5 x 6 mm); 100% UIL Tested; RoHS Compliant Other NTMFS10N3D2C 1 Download Model
Part Image Part Image 1 RoHS Compliant; Capable of 5V (Logic Level) Drive; Small Footprint (5x6 mm); Low RDS(on); Low QG and Capacitance Other NTMFS6H848NLT1G 1 Download Model
Part Image Part Image 1 Small footprint (5x6mm); Low Rds(on); Low Qg and Capacitance; RoHS Compliant Other NTMFS5C612NWFT1G 1 Download Model
Part Image Part Image 1 Latest 40V Standard Gate Level Power MOSFET Technology; Lower On-Resistance; Lower Gate Charge; Good Body Diode Softness Other NTMFS0D9N04XMT1G 1 Download Model
Part Image Part Image 1 Small Footprint (5x6 mm); Low RDS(on); Low QG and Capacitance; RoHS Compliant Other NTMFS6H800NT1G 1 Download Model
Part Image Part Image 1 Latest 40V Standard Gate Level Power MOSFET Technology; Lower On-Resistance; Lower Gate Charge; Good Body Diode Softness Other NTMFS0D5N04XMT1G 1 Download Model
Part Image Part Image 1 MOSFET - Power, Single N-Channel, DUAL COOL , DFN8 80 V, 4.0 m, 136 A Other NTMFSC004N08MC 1 Download Model
Part Image Part Image 1 ON Semiconductor NTMFS4841NHT1G N-channel MOSFET Transistor, 59 A, 30 V, 8-Pin SOIC Other NTMFS4841NHT1G 1 Download Model
Part Image Part Image 1 MOSFET - Power, DUAL COOL N-Channel, DFN8 5x6 60 V, 1.5 m, 235 A NTMFSC1D6N06CL Other NTMFSC1D6N06CL 1 Download Model
Part Image Part Image 1 Low RDS(on); Low input capacitance; RoHS Compliant Other NTMFS5H425NLT1G 1 Download Model
Part Image Part Image 1 Less Peak Reverse Recovery Current with Good Softness Performance.; Lowest On-Resistance in 5x6 Package.; Latest 40V Logic Gate Level Power MOSFET Technology.; Lower Output Charge by Smaller Output Capacitance. Other NTMFS0D9N04XLT1G 1 Download Model
Part Image Part Image 1 Advanced Dual−Side Cooled Packaging; Ultra Low RDS(on) to Minimize Conduction Losses; MSL1 Robust Packaging Design; Low Qg and Qoss to Minimize Charge Losses; These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Other NTMFSC1D9N06HL 1 Download Model
Part Image Part Image 1 Shielded Gate MOSFET Technology ; Max rDS(on) = 3.2 mΩ at VGS = 10 V, ID = 67 A ; Max rDS(on) = 7.9 mΩ at VGS = 6 V, ID = 33 A ; Lowers Switching Noise/EMI ; MSL1 Robust Package Design ; 100% UIL Tested ; RoHS Compliant Other NTMFS7D5N15MC 1 Download Model
Part Image Part Image 1 Low RDS(on); Low input capacitance; RoHS Compliant Other NTMFS5C404NLT1G 1 Download Model
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