DS-66 Model Download Search Results
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FDS6680A
onsemi
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1 | Ultra-low gate charge ; High performance trench technology for extremely low RDS(ON) ; RDS(ON) = 13 mΩ @ VGS = 4.5 V ; RDS(ON) = 9.5 mΩ @ VGS = 10 V ; 12.5 A, 30 V ; High power and current handling capability | Small Outline Packages | FDS6680A |
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FDS6670A
onsemi
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1 | Low gate charge; Fast switching speed; 13 A, 30 V; RDS(ON) = 10 mΩ @ VGS = 4.5 V; High power and current handling capability; High performance trench technology for extremely low RDS(ON); RDS(ON) = 8 mΩ @ VGS = 10 V | Small Outline Packages | FDS6670A |
3
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NDS66PT5-16IT TR
INSIGNIS
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1 | SDRAM Memory IC 64Mbit Parallel 166 MHz 54-TSOP II | Small Outline Packages | NDS66PT5-16IT TR |
3
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FDS6673BZ
onsemi
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1 | Extended VGS range (-25V) for battery applications ; High performance trench technology for extremely low rDS(on) ; RoHS compliant ; Max rDS(on) = 7.8mΩ, VGS = -10V, ID = -14.5A ; Max rDS(on) = 12mΩ, VGS = -4.5V, ID = -12A ; High power and current handling capability ; HBM ESD protection level of 6.5kV typical (note 3) | Small Outline Packages | FDS6673BZ |
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FDS6692A
onsemi
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1 | Last Shipments - N-Channel PowerTrench SyncFET, 30V, 21A, 3.6mΩ | Small Outline Packages | FDS6692A |
3
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FDS6612A
onsemi
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1 | Low gate charge ; Fast switching speed ; RDS(ON) = 22 mΩ @ VGS = 10 V ; High power and current handling capability ; High performance trench technology for extremely low RDS(ON) ; 8.4 A, 30 V ; RDS(ON) = 30 mΩ @ VGS = 4.5 V | Small Outline Packages | FDS6612A |
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FDS6675
onsemi
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1 | Obsolete - 30V N-Channel PowerTrench SyncFET 14.5A, 6.0mΩ | Small Outline Packages | FDS6675 |
3
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FDS6690AS
onsemi
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1 | Obsolete - N-Channel PowerTrench MOSFET 30V, 9A, 11.5mΩ | Small Outline Packages | FDS6690AS |
3
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FDS6670AS
onsemi
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1 | 13.5A, 30V RDS(on) = 9.0mΩ @ VGS = 10V RDS(on) = 11.5mΩ @ VGS = 4.5V ; High power and current handling capability ; Low gate charge (27nC typical) ; RoHS Compliant ; Includes SyncFET Schottky body diode ; High performance trench technology for extremely lowRDS(ON) and fast switching | Small Outline Packages | FDS6670AS |
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FDS6675BZ
onsemi
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1 | Max rDS(on) = 13mΩ at VGS = -10V, ID = -11A ; Extended VGS range (-25V) for battery applications ; RoHS Compliant ; High performance trench technology for extremely low rDS(on) ; Max rDS(on) = 21.8mΩ at VGS = -4.5V, ID = -9A ; HBM ESD protection level of 5.4 KV typical (note 3) ; High power and current handing capability | Small Outline Packages | FDS6675BZ |
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FDS6682
onsemi
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1 | High power and current handling capability; High performance trench technology for extremelylow RDS(ON); RDS(ON) = 7.5 mΩ @ VGS = 10 V; 14 A, 30 V; Low gate charge (22 nC typical); RDS(ON) = 9.0 mΩ @ VGS = 4.5 V | Small Outline Packages | FDS6682 |
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NDS66PT5-20ET
INSIGNIS
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1 | 4M x 16 bit Synchronous DRAM (SDRAM), PC200, 64Mb, x16, TSOPII | Small Outline Packages | NDS66PT5-20ET |
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FDS6679AZ
onsemi
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1 | Max rDS(on) = 14.8mΩ at VGS = -4.5V, ID = -11A; HBM ESD protection level of 6kV typical (note 3); High power and current handing capability; Extended VGS range (-25V) for battery applications; High performance trench technology for extremely lowrDS(on); High power and current handing capability; Max rDS(on) = 9.3mΩat VGS = -10V, ID = -13A | Small Outline Packages | FDS6679AZ |
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FDS6690A
onsemi
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1 | Low gate charge; High power and current handling capability; RDS(ON) = 12.5 mΩ @ VGS = 10 V; 11 A, 30 V; High performance trench technology for extremely low RDS(ON); Fast switching speed; RDS(ON) = 17.0 mΩ @ VGS = 4.5 V | Small Outline Packages | FDS6690A |
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FDS6680AS
onsemi
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1 | Last Shipments - N-Channel PowerTrench MOSFET, 30V, 14A, 7.5mΩ | Small Outline Packages | FDS6680AS |
3
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FDS6630A
onsemi
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1 | Last Shipments - N-Channel PowerTrench SyncFET, 30V, 13.5A, 9.0mΩ | Small Outline Packages | FDS6630A |
3
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FDS6676AS
onsemi
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1 | Obsolete - P-Channel PowerTrench MOSFET, 30V, -13A, 9mΩ | Small Outline Packages | FDS6676AS |
3
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FDS6681Z
onsemi
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1 | RDS(ON) = 6.5 mΩ @ VGS = -4.5V; RDS(ON) = 4.6 mΩ @ VGS = -10V; -20 A, -30V; Extended VGSS range (–25V) for battery applications; HBM ESD protection level of 8kV typical (note 3); High performance trench technology for extremely low RDS(ON); High power and current handling capability; Termination is Lead-free and RoHS Compliant | Small Outline Packages | FDS6681Z |
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FDS6673BZ
Rochester Electronics
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1 | P-Channel 30 V 14.5A (Ta) 2.5W (Ta) Surface Mount 8-SOIC | Small Outline Packages | FDS6673BZ |
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FDS6679
onsemi
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1 | Obsolete - Single N-Channel, Logic Level, PowerTrench MOSFET 30V, 12.5A, 9.5mΩ | Small Outline Packages | FDS6679 |
3
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107-DS662-6YEL
Mountain Switch
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1 | Pushbutton Switches YEL ILL CIR OFF-(ON) | Other | 107-DS662-6YEL |
3
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DS-663-C-R-W-S-K-K
MIYAMA
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1 | Pushbutton Switch Snap-in Type Non-Lock DS-663 Series | DS-663-C-R-W-S-K-K |
1
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CDS-6620-058E
Same Sky
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1 | 66 x 20 mm, Square Frame, .25 W, 8 Ohm, Ferrite Magnet, PET Cone, Speaker | CDS-6620-058E |
1
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HDS664-299GGRTV
Advanced Interconnections Corp
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1 | IC Socket, DIP64, 64 Contact(s), 2.54mm Term Pitch, 15.24mm Row Spacing, Solder | HDS664-299GGRTV |
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DS664-30TT
Advanced Interconnections Corp
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1 | IC Socket, DIP64, 64 Contact(s), 2.54mm Term Pitch, 15.24mm Row Spacing, Solder | DS664-30TT |
0
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![Part Image](["https://componentsearchengine.com/2D/0T/19556454.2.1.png",null,null])
![Part Image](["https://media.rs-online.com/t_large/R8050378-01.jpg",null,null])
![Part Image](["https://componentsearchengine.com/Images/9/FDS6675.jpg",null,null])
![Part Image](["https://componentsearchengine.com/Images/9/FDS6690AS.jpg",null,null])
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