FDS-4 Model Download Search Results
Showing 25 of 250 results
Price & Stock Powered by 
Findchips
Findchips
Filter by Manufacturer
| Image | Part Number | D.S | Description | Package Category | Prices / Stock | Model | Action |
|---|
| Image | Part Number | D.S | Description | Package Category | Prices / Stock | Model | Action | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
FDS4141
onsemi
|
1 | RoHS Compliant ; Max rDS(on) = 19.0mΩ at VGS = -4.5V, ID = -8.4A ; Max rDS(on) = 13.0mΩ at VGS = -10V, ID = -10.5A ; High performance trench technology for extremely low rDS(on) | Small Outline Packages | FDS4141 |
3
|
Download Model | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
|
FDS4935BZ
onsemi
|
1 | High power and current handling capability; RDS(ON) = 22 mΩ @ VGS = –10 V; ESD protection diode (note 3) ; –6.9 A, –30 V; High performance trench technology for extremelylow RDS(ON); Extended VGSS range (–25V) for battery applications; RDS(ON) = 35 m @ VGS = – 4.5 V | Small Outline Packages | FDS4935BZ |
3
|
Download Model | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
|
FDS4685
onsemi
|
1 | Fast switching speed; RDS(ON) = 0.027 mΩ @ VGS = -10V; -8.2A, -40V; High performance trench technology for extremely low RDS(ON); High power and current handling capability; RDS(ON) = 0.035 mΩ @ VGS = -4.5V | Small Outline Packages | FDS4685 |
3
|
Download Model | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
|
FDS4488
onsemi
|
1 | MOSFET N-CH 30V 7.9A 8SOIC | Small Outline Packages | FDS4488 |
3
|
Download Model | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
|
FDS4953
onsemi
|
1 | TRANS MOSFET P-CH 30V 5A 8SOIC - Bulk | Small Outline Packages | FDS4953 |
3
|
Download Model | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
|
FDS4435BZ
onsemi
|
1 | High performance trench technology for extremely low rDS(on); Max rDS(on) = 35mΩ at VGS = –4.5V, ID = –6.7A; High power and current handling capability ; Termination is Lead–free and RoHS compliant; Max rDS(on) = 20mΩ at VGS = –10V, ID = –8.8A; HBM ESD protection level of ±3.8KV typical (note 3) ; Extended VGSS range (–25V) for battery applications | Small Outline Packages | FDS4435BZ |
3
|
Download Model | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
|
FDS4675
onsemi
|
1 | High power and current handling capability; -11A, -40 V. ; High performance trench technology for extremelylow RDS(ON); Fast switching speed; RDS(ON) = 0.013 Ω @ VGS = -10 V; RDS(ON) = 0.017 Ω @ VGS = -4.5 V | Small Outline Packages | FDS4675 |
3
|
Download Model | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
|
FDS4935A
onsemi
|
1 | RDS(ON) = 35 mΩ @ VGS = -4.5V ; -7A, -30V ; High performance trench technology for extremely low RDS(ON) ; Low gate charge (15nC typical) ; High power and current handling capability ; RDS(ON) = 23 mΩ @ VGS = -10V ; Fast switching speed | Small Outline Packages | FDS4935A |
3
|
Download Model | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
|
FDS4559-F085
onsemi
|
1 | RoHS Compliant; Qualified to AEC Q101; Q2 P-Channel -3.5A, -60V Max. RDS(on) = 105 mΩ at VGS = -10 V Max. RDS(on) = 135 mΩ at VGS = -4.5 V; Q1 N-Channel 4.5A, 60V Max. RDS(on) = 55 mΩ at VGS = 10 V, Max. RDS(on) = 75 mΩ at VGS = 4.5 V | Small Outline Packages | FDS4559-F085 |
3
|
Download Model | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
|
FDS4465
onsemi
|
1 | -13.5 A, -20 V. ; RDS(on) = 8.5mΩ @ VGS = - 4.5V ; RDS(on) = 10.5mΩ @ VGS = - 2.5V ; High performance trench technology for extremelylow RDS(ON); Fast switching speed; High current and power handling capability; RDS(on) = 14mΩ @ VGS = - 1.8V | Small Outline Packages | FDS4465 |
3
|
Download Model | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
|
FDS4897AC
onsemi
|
1 | Q1 N-Channel Max. RDS(on) = 26 mΩ at VGS = 10 V, ID = 6.1 A Max. RDS(on) = 31 mΩ at VGS = 4.5 V, ID = 5.6 A; RoHS Compliant; Q2 P-Channel Max. RDS(on) = 39 mΩ at VGS = -10 V, ID = -5.2 A Max. RDS(on) = 65 mΩ at VGS = -4.5 V, ID = -4.1 A; 100% UIL Tested | Small Outline Packages | FDS4897AC |
3
|
Download Model | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
|
FDS4672A
onsemi
|
1 | High power and current handling capability; 11 A, 40 V; RDS(ON) = 13 mΩ @ VGS = 4.5 V; Low gate charge (35 nC typical); High performance trench technology for extremelylow RDS(ON) | Small Outline Packages | FDS4672A |
3
|
Download Model | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
|
FDS4470
onsemi
|
1 | High performance trench technology for extremelylow RDS(ON); 12.5 A, 40 V. RDS(ON) = 9 mΩ @ VGS = 10 V; High power and current handling capability; Low gate charge (45 nC) | Small Outline Packages | FDS4470 |
3
|
Download Model | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
|
FDS4141-F085
onsemi
|
1 | P-Channel 40 V 10.8A (Ta) 1.6W (Ta) Surface Mount 8-SOIC | Small Outline Packages | FDS4141-F085 |
3
|
Download Model | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
|
FDS4435A
onsemi
|
1 | MOSFET SO-8 P-CH -30V | Small Outline Packages | FDS4435A |
3
|
Download Model | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
|
FDS4480
onsemi
|
1 | High performance trench technology for extremely low RDS(ON); Low gate charge (29nC); High power and current handling capability; 10.8A, 40V. RDS(ON) = 12mΩ @ VGS = 10V | Small Outline Packages | FDS4480 |
3
|
Download Model | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
|
FDS4559
onsemi
|
1 | Q2 P-Channel -3.5A, -60V Max. RDS(on) = 105 mΩ at VGS = -10 V, Max. RDS(on) = 135 mΩ at VGS = -4.5 V; Q1 N-Channel 4.5A, 60V Max. RDS(on) = 55 mΩ at VGS = 10 V, Max. RDS(on) = 75 mΩ at VGS = 4.5 V | Small Outline Packages | FDS4559 |
3
|
Download Model | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
|
FDS4897C
onsemi
|
1 | RoHS compliant; High power and handling capability in a widelyused surface mount package; Q1 N-Channel 6.2A, 40V Max. RDS(on) = 29 mΩ at VGS = 10 V Max. RDS(on) = 36 mΩ at VGS = 4.5 V; Q2 P-Channel -4.4A, -40V Max. RDS(on) = 46 mΩ at VGS = -10 V Max. RDS(on) = 63 mΩ at VGS = -4.5 V | Small Outline Packages | FDS4897C |
3
|
Download Model | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
|
FDS-40
Yamaichi Electronics Co Ltd
|
1 | Card Edge Connector, 40 Contact(s), 2 Row(s), Female, IDC Terminal, Socket | FDS-40 |
0
|
Build or Request | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
|
GM20FDS4NSS0000/AA
Amphenol Positronic
|
1 | Rack and Panel Connector, 30 Contact(s), Female, Solder Terminal, Plug | GM20FDS4NSS0000/AA |
0
|
Build or Request | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
|
ECCM5B5FD-S-40.000M
Ecliptek Corporation
|
1 | Series - Fundamental Quartz Crystal, 40MHz Nom | ECCM5B5FD-S-40.000M |
0
|
Build or Request | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
|
FDS4672AD84Z
Fairchild Semiconductor Corporation
|
1 | Small Signal Field-Effect Transistor, 11A I(D), 40V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | FDS4672AD84Z |
0
|
Build or Request | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
|
SGM14FDS4T0000
Amphenol Positronic
|
1 | Rack and Panel Connector, 14 Contact(s), Female, Solder Terminal | SGM14FDS4T0000 |
0
|
Build or Request | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
|
FDS4435A
VBsemi Electronics Co Ltd
|
1 | P-Channel 30-V (D-S) MOSFET FDS4435A with -9.0 A continuous drain current, -10 V gate-source voltage, RDS(on) of 0.018 ohm at VGS = -10 V, and 13 nC typical gate charge, suitable for load and battery switch applications. | FDS4435A |
0
|
Build or Request | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
|
FDS4410S62Z
Fairchild Semiconductor Corporation
|
1 | Small Signal Field-Effect Transistor, 10A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | FDS4410S62Z |
0
|
Build or Request | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![Part Image](["https://componentsearchengine.com/Images/9/FDS4488.jpg",null,null])
![Part Image](["//media.rs-online.com/t_large/L355384-01.jpg",null,null])
![Part Image](["https://componentsearchengine.com/Images/9/FDS4141-F085.jpg",null,null])
![Part Image](["https://componentsearchengine.com/Images/1/FDS4435A.jpg",null,null])
![Part Image]([null,null,"//content.supplyframe.com/images/process/fit-in/100x100/p/sot23_8.jpg"])
Can't find what you're looking for?
Request this part