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FOD3180S
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1 | 30 ns typ. pulse width distortion; Under voltage lockout protection (UVLO) withhysteresis; Guaranteed operating temperature range of -40°C to+100°C; 250 kHz maximum switching speed; 2 A minimum peak output current; Minimum clearance distance of 7.0 mm; C-UL, UL and VDE* safety agency approvals pending; 5000Vrms, 1 minute isolation; Wide VCCoperating range: 10 V to 20 V; 10 kV/m minimum common mode rejection; Minimum creepage distance of 7.0 mm; High-speed response: 200 ns max propagation delayover temperatu | Small Outline Packages | FOD3180S |
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FOD3184TV
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1 | 3A minimum peak output current for medium power MOSFET/IGBT; Use of P-Channel MOSFETs at output stage enables output voltage swing close to the supply rail (rail-to-rail output); Safety and regulatory approvals; Guaranteed operating temperature range of -40°C to 100°C; Minimum clearance distance of 8.0mm (Option T); Fast switching speed; Fast output rise/fall time; Under voltage lockout protection (UVLO) with hysteresis - optimized for driving IGBTs; Minimum insulation thickness of 0.5mm; IEC60747-5-2, 1,41 | Dual-In-Line Packages | FOD3184TV |
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FOD3180TV
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1 | 30 ns typ. pulse width distortion; Under voltage lockout protection (UVLO) withhysteresis; Guaranteed operating temperature range of -40°C to+100°C; 250 kHz maximum switching speed; 2 A minimum peak output current; Minimum clearance distance of 7.0 mm; C-UL, UL and VDE* safety agency approvals pending; 5000Vrms, 1 minute isolation; Wide VCCoperating range: 10 V to 20 V; 10 kV/m minimum common mode rejection; Minimum creepage distance of 7.0 mm; High-speed response: 200 ns max propagation delayover temperatu | Dual-In-Line Packages | FOD3180TV |
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FOD3150
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1 | Wide supply voltage range from 15V to 30V; UL1577, 5000 V RMS for 1 min.; Fast switching speed; 300ns max. pulse width distortion; Industrial inverter; Uninterruptible power supply; 500ns max. propagation delay; Safety and regulatory pending approvals; Use of P-channel MOSFETs at output stage enables output voltage swing close to the supply rail; Isolated IGBT/Power MOSFET gate drive; IEC60747-5-2 (approval pending); >8.0mm clearance and creepage distance (option ‘T’); Under-Voltage LockOut (UVLO) with hyst | Dual-In-Line Packages | FOD3150 |
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FOD3120SV
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1 | High noise immunity characterized by 35kV/µs minimum common mode rejection; 2.5A peak output current driving capability for most 800V/20A IGBT; Use of P-channel MOSFETs at output stage enables output voltage swing close to the supply rail; Wide supply voltage range from 15V to 30V; Fast switching speed; 400ns max. propagation delay; 100ns max. pulse width distortion; Under-Voltage LockOut (UVLO) with hysteresis; Extended industrial temperate range, -40°C to 100°C temperature range; Safety and regulatory app | Small Outline Packages | FOD3120SV |
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FOD3182
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1 | 250kHZ maximum switching speed; UL and VDE (requires 'V' ordering option) approved; Minimum clearance distance of 10.0mm to 16mm (Option TV or TSV); Fast output rise/fall time; Under voltage lockout protection (UVLO) with hysteresis - optimized for driving MOSFETs; Use of P-Channel MOSFETs at output stage enables output voltage swing close to the supply rail (rail-to-rail output); 65ns max. pulse width distortion; 5,000Vrms, 1 minute isolation; High noise immunity characterized by 50kV/µs (Typical) common m | Dual-In-Line Packages | FOD3182 |
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FOD3182TV
onsemi
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1 | 250kHZ maximum switching speed; UL and VDE (requires 'V' ordering option) approved; Minimum clearance distance of 10.0mm to 16mm (Option TV or TSV); Fast output rise/fall time; Under voltage lockout protection (UVLO) with hysteresis - optimized for driving MOSFETs; Use of P-Channel MOSFETs at output stage enables output voltage swing close to the supply rail (rail-to-rail output); 65ns max. pulse width distortion; 5,000Vrms, 1 minute isolation; High noise immunity characterized by 50kV/µs (Typical) common m | Dual-In-Line Packages | FOD3182TV |
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FOD3182SD
onsemi
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1 | 250kHZ maximum switching speed; UL and VDE (requires 'V' ordering option) approved; Minimum clearance distance of 10.0mm to 16mm (Option TV or TSV); Fast output rise/fall time; Under voltage lockout protection (UVLO) with hysteresis - optimized for driving MOSFETs; Use of P-Channel MOSFETs at output stage enables output voltage swing close to the supply rail (rail-to-rail output); 65ns max. pulse width distortion; 5,000Vrms, 1 minute isolation; High noise immunity characterized by 50kV/µs (Typical) common m | Small Outline Packages | FOD3182SD |
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FOD3150S
onsemi
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1 | Wide supply voltage range from 15V to 30V; UL1577, 5000 V RMS for 1 min.; Fast switching speed; 300ns max. pulse width distortion; Industrial inverter; Uninterruptible power supply; 500ns max. propagation delay; Safety and regulatory pending approvals; Use of P-channel MOSFETs at output stage enables output voltage swing close to the supply rail; Isolated IGBT/Power MOSFET gate drive; IEC60747-5-2 (approval pending); >8.0mm clearance and creepage distance (option ‘T’); Under-Voltage LockOut (UVLO) with hyst | Other | FOD3150S |
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FOD3150SD
onsemi
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1 | Wide supply voltage range from 15V to 30V; UL1577, 5000 V RMS for 1 min.; Fast switching speed; 300ns max. pulse width distortion; Industrial inverter; Uninterruptible power supply; 500ns max. propagation delay; Safety and regulatory pending approvals; Use of P-channel MOSFETs at output stage enables output voltage swing close to the supply rail; Isolated IGBT/Power MOSFET gate drive; IEC60747-5-2 (approval pending); >8.0mm clearance and creepage distance (option ‘T’); Under-Voltage LockOut (UVLO) with hyst | Small Outline Packages | FOD3150SD |
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FOD3120
onsemi
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1 | High noise immunity characterized by 35kV/µs minimum common mode rejection; 2.5A peak output current driving capability for most 800V/20A IGBT; Use of P-channel MOSFETs at output stage enables output voltage swing close to the supply rail; Wide supply voltage range from 15V to 30V; Fast switching speed; 400ns max. propagation delay; 100ns max. pulse width distortion; Under-Voltage LockOut (UVLO) with hysteresis; Extended industrial temperate range, -40°C to 100°C temperature range; Safety and regulatory app | Dual-In-Line Packages | FOD3120 |
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FOD3180
onsemi
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1 | 30 ns typ. pulse width distortion; Under voltage lockout protection (UVLO) withhysteresis; Guaranteed operating temperature range of -40°C to+100°C; 250 kHz maximum switching speed; 2 A minimum peak output current; Minimum clearance distance of 7.0 mm; C-UL, UL and VDE* safety agency approvals pending; 5000Vrms, 1 minute isolation; Wide VCCoperating range: 10 V to 20 V; 10 kV/m minimum common mode rejection; Minimum creepage distance of 7.0 mm; High-speed response: 200 ns max propagation delayover temperatu | Dual-In-Line Packages | FOD3180 |
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FOD3125S
onsemi
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1 | Extended Industrial Temperate Range, -40°C to 125°C; High Noise Immunity Characterized by 35kV/µs Minimum Common Mode Rejection; 2.5 A Peak Output Current Driving Capability for Most 1200 V/20 A IGBT; Use of P-channel MOSFETs at Output Stage Enables Output Voltage Swing Close to The Supply Rail; Fast switching speed; Wide Supply Voltage Range from 15 V to 30 V; Fast Switching Speed – 400 ns max. Propagation Delay – 100 ns max. Pulse Width Distortion; Under-Voltage LockOut (UVLO) with hysteresis; Safety and | Small Outline Packages | FOD3125S |
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FOD3180SDV
onsemi
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1 | 30 ns typ. pulse width distortion; Under voltage lockout protection (UVLO) withhysteresis; Guaranteed operating temperature range of -40°C to+100°C; 250 kHz maximum switching speed; 2 A minimum peak output current; Minimum clearance distance of 7.0 mm; C-UL, UL and VDE* safety agency approvals pending; 5000Vrms, 1 minute isolation; Wide VCCoperating range: 10 V to 20 V; 10 kV/m minimum common mode rejection; Minimum creepage distance of 7.0 mm; High-speed response: 200 ns max propagation delayover temperatu | Small Outline Packages | FOD3180SDV |
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FOD3180SV
onsemi
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1 | 30 ns typ. pulse width distortion; Under voltage lockout protection (UVLO) withhysteresis; Guaranteed operating temperature range of -40°C to+100°C; 250 kHz maximum switching speed; 2 A minimum peak output current; Minimum clearance distance of 7.0 mm; C-UL, UL and VDE* safety agency approvals pending; 5000Vrms, 1 minute isolation; Wide VCCoperating range: 10 V to 20 V; 10 kV/m minimum common mode rejection; Minimum creepage distance of 7.0 mm; High-speed response: 200 ns max propagation delayover temperatu | Other | FOD3180SV |
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FOD3180SD
onsemi
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1 | 30 ns typ. pulse width distortion; Under voltage lockout protection (UVLO) withhysteresis; Guaranteed operating temperature range of -40°C to+100°C; 250 kHz maximum switching speed; 2 A minimum peak output current; Minimum clearance distance of 7.0 mm; C-UL, UL and VDE* safety agency approvals pending; 5000Vrms, 1 minute isolation; Wide VCCoperating range: 10 V to 20 V; 10 kV/m minimum common mode rejection; Minimum creepage distance of 7.0 mm; High-speed response: 200 ns max propagation delayover temperatu | Small Outline Packages | FOD3180SD |
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FOD3120TSV
onsemi
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1 | High noise immunity characterized by 35kV/µs minimum common mode rejection; 2.5A peak output current driving capability for most 800V/20A IGBT; Use of P-channel MOSFETs at output stage enables output voltage swing close to the supply rail; Wide supply voltage range from 15V to 30V; Fast switching speed; 400ns max. propagation delay; 100ns max. pulse width distortion; Under-Voltage LockOut (UVLO) with hysteresis; Extended industrial temperate range, -40°C to 100°C temperature range; Safety and regulatory app | Small Outline Packages | FOD3120TSV |
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FOD3120SD
onsemi
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1 | High noise immunity characterized by 35kV/µs minimum common mode rejection; 2.5A peak output current driving capability for most 800V/20A IGBT; Use of P-channel MOSFETs at output stage enables output voltage swing close to the supply rail; Wide supply voltage range from 15V to 30V; Fast switching speed; 400ns max. propagation delay; 100ns max. pulse width distortion; Under-Voltage LockOut (UVLO) with hysteresis; Extended industrial temperate range, -40°C to 100°C temperature range; Safety and regulatory app | Small Outline Packages | FOD3120SD |
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FOD3180TSV
onsemi
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1 | 30 ns typ. pulse width distortion; Under voltage lockout protection (UVLO) withhysteresis; Guaranteed operating temperature range of -40°C to+100°C; 250 kHz maximum switching speed; 2 A minimum peak output current; Minimum clearance distance of 7.0 mm; C-UL, UL and VDE* safety agency approvals pending; 5000Vrms, 1 minute isolation; Wide VCCoperating range: 10 V to 20 V; 10 kV/m minimum common mode rejection; Minimum creepage distance of 7.0 mm; High-speed response: 200 ns max propagation delayover temperatu | Small Outline Packages | FOD3180TSV |
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FOD3184SDV
onsemi
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1 | 3A minimum peak output current for medium power MOSFET/IGBT; Use of P-Channel MOSFETs at output stage enables output voltage swing close to the supply rail (rail-to-rail output); Safety and regulatory approvals; Guaranteed operating temperature range of -40°C to 100°C; Minimum clearance distance of 8.0mm (Option T); Fast switching speed; Fast output rise/fall time; Under voltage lockout protection (UVLO) with hysteresis - optimized for driving IGBTs; Minimum insulation thickness of 0.5mm; IEC60747-5-2, 1,41 | Small Outline Packages | FOD3184SDV |
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FOD3184
onsemi
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1 | 3A minimum peak output current for medium power MOSFET/IGBT; Use of P-Channel MOSFETs at output stage enables output voltage swing close to the supply rail (rail-to-rail output); Safety and regulatory approvals; Guaranteed operating temperature range of -40°C to 100°C; Minimum clearance distance of 8.0mm (Option T); Fast switching speed; Fast output rise/fall time; Under voltage lockout protection (UVLO) with hysteresis - optimized for driving IGBTs; Minimum insulation thickness of 0.5mm; IEC60747-5-2, 1,41 | Dual-In-Line Packages | FOD3184 |
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FOD3182SDV
onsemi
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1 | 250kHZ maximum switching speed; UL and VDE (requires 'V' ordering option) approved; Minimum clearance distance of 10.0mm to 16mm (Option TV or TSV); Fast output rise/fall time; Under voltage lockout protection (UVLO) with hysteresis - optimized for driving MOSFETs; Use of P-Channel MOSFETs at output stage enables output voltage swing close to the supply rail (rail-to-rail output); 65ns max. pulse width distortion; 5,000Vrms, 1 minute isolation; High noise immunity characterized by 50kV/µs (Typical) common m | Small Outline Packages | FOD3182SDV |
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FOD3182V
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1 | 3A Gate Driver Optical Coupling 5000Vrms 1 Channel 8-DIP | Dual-In-Line Packages | FOD3182V |
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FOD3181SDV
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1 | 1.5A Gate Driver Optical Coupling 5000Vrms 1 Channel 8-SMD, FOD3181SDV DC Input MOSFET Output Optocoupler, 8-Pin DIP | Dual-In-Line Packages | FOD3181SDV |
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FOD3180T
onsemi
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1 | Logic IC Output Optocoupler, 1-Channel, 1-Element, 5000V Isolation | FOD3180T |
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![Part Image](["https://componentsearchengine.com/Images/9/FOD3182V.jpg",null,null])
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